Transmitting and Receiving
Elements
Transmitting element
1 A 184 A
Fig.: 1 A 184 A
in diode socket LWMDL
Fig.: 1 A 184 A
in diode socket LSTDL
Type
Description
1 A 184 A
Infrared LED
GaAIAs LED with a high-efficiency because of its double-lens system.
This LED has been optimized for fibres having a core diameter of between 50 µm and 100 µm.
The diode chip is isolated from the housing.
Diode sockets see page 10 and 11.
Connections
Mounted in
diode socket LWMDL
A (orange*)
H (Housing)
C
red*
Mounted in
diode socket LSTDL
A (orange*)
H (Housing)
C
red*
* Color of the identifying
sleeve or casting compound
* Color of the identifying
sleeve or casting compound
Technical data
Limit ratings (T
a
= 25 °C)
Forward current (I
F
)
Peak forward current (I
FM
)
Dissipation power (P
tot
)
Cut-off voltage (V
R
)
Isolation voltage
housing/diode
Ambient temperature(T
amb
)
Storage temperature (T
stg
)
Soldering temperature (T
sd
)
Nominal ratings (T
a
= 25 °C)
Forward voltage (V
F
)
Wavelength (λ
P
)
Spectral bandwidth (∆λ)
Wavelength temp. coefficient
Bandwidth f
c
Rise/decay times (t
r
/ t
f
)
Capacitance (C
r
)
Launchable optical power
(I
F
= 100 mA)
– in G 50/125 fibre
– in G 62.5/125 fibre
P
opt
temperature coefficient
Diode chart
100 mA
180 mA (f
≥
1 MHz; 50%)
250 mW
1.5 V
≥
30 V
– 25 °C to +60 °C
– 35 °C to +85 °C
260 °C (10 s)
typ. 1.8 V (I
F
= 100 mA), max. 2.2 V
870 nm
60 nm
typ. 0.3 nm/K
typ. 140 MHz
3 ns
250 pF (V
R
= 0 V, f = 1 MHz)
min.
40 µW
PP
/ – 14 dBm
60 µW
PP
/ – 12 dBm
– 0.6 % / K
I
F
/mA
180
160
140
120
100
80
60
40
20
1.0 1.2 1.4 1.6 1.8 2.0 2.2
U
F
/V
Diode current
versus
forward voltage
5
