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1A5

Rectifier Diode, 1 Element, 1A, 600V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:Galaxy Semi-Conductor Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Galaxy Semi-Conductor Co Ltd
Reach Compliance Code
unknown
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1 V
最大非重复峰值正向电流
30 A
元件数量
1
最高工作温度
150 °C
最大输出电流
1 A
最大重复峰值反向电压
600 V
表面贴装
NO
文档预览
BL
FEATURES
GALAXY ELECTRICAL
1A1 --- 1A7
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
PLASTIC SILICON RECTIFIER
Low cost
Diffused junction
Low leakage
High current capability
Easily cleaned with Freon,Alcohol,lsopropanol
and similar solvents
The plastic material carries U/L recognition 94V-O
R-1
MECHANICAL DATA
Case:JEDEC R-1,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1A1
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1A2
100
70
100
1A3
200
140
200
1A4
400
280
400
1.0
1A5
600
420
600
1A6
800
560
800
1A7
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
j
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
V
F
I
R
C
J
R
θJA
T
j
T
STG
1.0
5.0
50.0
15
50
- 55 ---- + 150
- 55 ---- + 150
V
µA
pF
/W
(Note2)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
www.galaxycn.com
Document Number 0260001
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 --TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
1A1---1A7
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
100
10
4
2
1.0
T
J
=25
Pulse Width=300us
100
60
f=1MHz
T
J
=25
CAPACITANCE, pF
40
20
10
AMPERES
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
1.0
1.2
1.4
1.6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
FIG.3 -- PEAK FORWARD SURGE CURRENT
FIG.4 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
30
AVERAGE FORWARD CURRENT,
AMPERES
1.0
.8
.6
.4
.2
0
0
25
50
75
100
125
150
175
200
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(9.5mm) Lead Length
20
AMPERES
10
    
T
J
=
125
8.3ms Single Half
Sine-Wave
0
1
10
100
NUMBER OF CYCLES AT 60Hz
AMBIENT TEMPERATURE,
www.galaxycn.com
Document Number 0260001
BL
GALAXY ELECTRICAL
2.
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参数对比
与1A5相近的元器件有:1A3、1A4、1A2、1A7。描述及对比如下:
型号 1A5 1A3 1A4 1A2 1A7
描述 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Rectifier Diode, 1 Element, 1A, 200V V(RRM), Rectifier Diode, 1 Element, 1A, 400V V(RRM), Rectifier Diode, 1 Element, 1A, 100V V(RRM), Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
是否Rohs认证 符合 符合 符合 符合 符合
厂商名称 Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd Galaxy Semi-Conductor Co Ltd
Reach Compliance Code unknown unknown unknown unknown unknow
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1 V 1 V 1 V 1 V 1 V
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A
最大重复峰值反向电压 600 V 200 V 400 V 100 V 1000 V
表面贴装 NO NO NO NO NO
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