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1A6

1 A, 800 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:Uniohm Corp.

厂商官网:http://www.uniohm.com.tw/

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1F1
1.0 AMP FAST RECOVERY RECTIFIERS
THRU
1F7
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
1.0 Ampere
R-1
.102(2.6)
.091(2.3)
DIA.
.787(20.0)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.19 grams
.126(3.2)
.106(2.7)
.025(0.65)
.021(0.55)
DIA.
.787(20.0)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=25 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1F1
50
35
50
1F2
100
70
100
1F3
200
140
200
1F4
400
280
400
1.0
25
1.3
5.0
100
1F5
600
420
600
1F6
800
560
800
1F7
1000
700
1000
UNITS
V
V
V
A
A
V
A
150
15
-65 +150
250
500
A
nS
pF
C
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
RATING AND CHARACTERISTIC CURVES (1F1 THRU 1F7)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
10
3.0
1.0
Tj=25 C
Pulse Width 300us
1% Duty Cycle
AMBIENT TEMPERATURE,( C)
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT,(A)
25
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
20
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
15
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
10
5
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
15
10
5
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
JUNCTION CAPACITANCE,(pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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参数对比
与1A6相近的元器件有:1A5、1A7、1F5、1F6、1F7。描述及对比如下:
型号 1A6 1A5 1A7 1F5 1F6 1F7
描述 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
是否无铅 - 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 - 符合 符合 符合 符合 符合
厂商名称 - Uniohm Corp. Uniohm Corp. Uniohm Corp. Uniohm Corp. Uniohm Corp.
包装说明 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
针数 - 2 2 2 2 2
Reach Compliance Code - unknow unknow unknown unknow unknow
ECCN代码 - EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 - ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 - SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 - SILICON SILICON SILICON SILICON SILICON
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
元件数量 - 1 1 1 1 1
端子数量 - 2 2 2 2 2
最高工作温度 - 175 °C 175 °C 150 °C 150 °C 150 °C
最低工作温度 - -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 - 1 A 1 A 1 A 1 A 1 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 - ROUND ROUND ROUND ROUND ROUND
封装形式 - LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
最大重复峰值反向电压 - 600 V 1000 V 600 V 800 V 1000 V
表面贴装 - NO NO NO NO NO
端子形式 - WIRE WIRE WIRE WIRE WIRE
端子位置 - AXIAL AXIAL AXIAL AXIAL AXIAL
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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