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1C6297ABG

Trans Voltage Suppressor Diode,

器件类别:分立半导体    二极管   

厂商名称:SENSITRON

厂商官网:http://www.sensitron.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
compli
ECCN代码
EAR99
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码
e0
峰值回流温度(摄氏度)
NOT SPECIFIED
端子面层
TIN LEAD
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5339, REV A.2
1C6270/A to 1C6303/A
1500W Transient Voltage Suppressor Chip / Die
Features:
o
o
Operating Temperature: -65
C to 175 C
Die Size: Hex
Breakdow n
Electrical Characteristics:
V(BR)
Device
Industry
Voltage
Type
Standard
(V)
Min
1C6270
1C6270A
1C6271
1C6271A
1C6272
1C6272A
1C6273
1C6273A
1C6274
1C6274A
1C6275
1C6275A
1C6276
1C6276A
1C6277
1C6277A
1C6278
1C6278A
1C6279
1C6279A
1C6280
1C6280A
1C6281
1C6281A
1C6282
1C6282A
1C6283
1C6283A
1C6284
1C6284A
1C6285
1C6285A
1.5KE9.1
1.5KE9.1A
1.5KE10
1.5KE10A
1.5KE11
1.5KE11A
1.5KE12
1.5KE12A
1.5KE13
1.5KE13A
1.5KE15
1.5KE15A
1.5KE16
1.5KE16A
1.5KE18
1.5KE18A
1.5KE20
1.5KE20A
1.5KE22
1.5KE22A
1.5KE24
1.5KE24A
1.5KE27
1.5KE27A
1.5KE30
1.5KE30A
1.5KE33
1.5KE33A
1.5KE36
1.5KE36A
1.5KE39
1.5KE39A
8.19
8.65
9.0
9.5
9.9
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
33.3
Test
Current at
IT (mA)
Stand-off
Voltage
VWM (V)
Max
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
31.6
Maximum
Reverse
Leakge at
VWM ID
(μA)
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximu
m Peak
Pulse
IPPM (A)
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
26.6
Maximum
Clamping
Voltage at
IPPM
VC(V)
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
56.4
Maximum
Temperature
Coefficient of
V(BR) (%/ )
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
©2012 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5339, REV A.2
Breakdow n
Voltage V
(BR)
(V)
Min
Max
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
Test
Current
at I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-
off
Voltage
V
WM
(V)
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
1C6270/A to 1C6303/A
Device Type
Industry
Standard
1.5KE43
1.5KE43A
1.5KE47
1.5KE47A
1.5KE51
1.5KE51A
1.5KE56
1.5KE56A
1.5KE62
1.5KE62A
1.5KE68
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
.5KE100A
1.5KE110
.5KE110A
1.5KE120
.5KE120A
1.5KE130
.5KE130A
1.5KE150
.5KE150A
1.5KE160
.5KE160A
1.5KE170
.5KE170A
1.5KE180
1.5KE180A
1.5KE200
.5KE200A
1C6286
1C6286A
1C6287
1C6287A
1C6288
1C6288A
1C6289
1C6289A
1C6290
1C6290A
1C6291
1C6291A
1C6292
1C6292A
1C6293
1C6293A
1C6294
1C6294A
1C6295
1C6295A
1C6296
1C6296A
1C6297
1C6297A
1C6298
1C6298A
1C6299
1C6299A
1C6300
1C6300A
1C6301
1C6301A
1C6302
1C6302A
1C6303
1C6303A
Maximum
Reverse
Leakge
at V
WM
I
D
A
)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
01.
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak
Pulse
I
PPM
(A)
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
Maximum
Temperature
Coefficient of
V
(BR)
(%/ )
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
©2012 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5339, REV A.2
1C6270/A to 1C6303/A
Mechanical Dimensions: In Inches (mm)
Anode
0.100±0.003 (2.540±0.076)
0.125±0.003 (3.175±0.076)
0.010±0.001 (0.254±0.025)
Top side metal: Al (25kÅ minimum)
Bottom side metal: Ti/Ni/Ag (30kÅ minimum)
PART ORDERING INFORMATION
Default part number is Al top, Ag bottom.
Add the following suffix for these metal combinations:
Top
Bottom
Part Number
Al
Ag
1C6270
AG
Al
Au
1C6270AG
BB
Ag
Ag
1C6270BB
BG
Ag
Au
1C6270BG
GG
Au
Au
1C6270GG
GB
Au
Ag
1C6270GB
-R
- Reverse polarity -
1C6270-R
A = Ti (0.3 kA) / Al (25 kA)
B = Ti (1.2 kA) / Ni (1.8 kA) / Ag (30kA)
G = Ti (1.2 kA) / Ni (1.8 kA) / Au (12kA)
(TOP)
/ Ti (1.2 kA) / Ni (1.8 kA) / Au (4kA)
(BOTTOM)
Suffix
©2012 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATASHEET 5339, REV A.2
1C6270/A to 1C6303/A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’
fail-safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of
the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any
other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at
a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
©2012 Sensitron Semiconductor
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
www.sensitron.com
sales@sensitron.com
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