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1E1(G)

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器件类别:分立半导体    超快恢复二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
R-1
IF(A)
1
VRRM (V)
50
IFSM (A)
30
VF (V)
0.95
@ IF (A)
1
Maximum reverse current
5
TRR(nS)
35
class
Diodes
文档预览
1E1G-1E6G
Ultra Fast Rectifiers
VOLTAGE RANGE: 50 ---
600
V
CURRENT: 1.0 A
Features
Low cost
Glass passivated junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries U/L recognition 94V-0
R
-
1
Mechanical Data
Case:JEDEC
R--1,molded
plastic
Polarity: Color band denotes cathode
Weight: 0.007 ounces,0.20 grams
Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1E1G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125
@T
A
=75
1E2G
100
70
100
1E3G
200
140
200
1.0
1E4G
400
280
400
1E5G
600
420
600
1E6G
800
560
800
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
I
FSM
30.0
A
Maximum instantaneous forward voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.95
5.0
150.0
35
17
50
1.25
1.7
V
A
ns
pF
/W
at rated DC blocking voltage @T
A
=150
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
- 55 ----- + 175
- 55 ----- + 175
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
1E1G-1E6G
Ultra Fast Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
50VDC
(approx)
(-)
1
NONIN-
DUCTIVE
(-)
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
(-)
0
-0 .2 5 A
-1 .0 A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR
10
ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
FIG.3 -- FORW ARD DERATING CURVE
z
AVERAGE FORWARD CURRENT
1.0
INSTANTANEOUS FORWARD CURRENT
1E
1
G
-
1E
1E
4G
10
3G
-1
E
6
G
AMPERES
1
AMPERES
1E
5G
0.5
0.1
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.375"(95mm)Lead Length
0
0
25
50
75
1 00
1 25
1 50
175
0.01
.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
   
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORW ARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
100
TJ = 25
f = 1.0MHz
Vsig = 50mVp-p
10
30
25
20
8.3ms Single Half
Sine-Wave
AMPERES
15
10
5
0
0
1
5
20
50
100
1
0 .1
1.0
4.0
10
10 0
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60Hz
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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