1EZ110D5 thru 1EZ200D5, e3
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
DESCRIPTION
The 1EZ110D5 thru 1EZ200D5 series of axial-leaded 1.0 watt Zeners
provides voltage regulation selections with 5% tolerances from 110 to 200
volts in a DO-41 plastic package size. Other Zener voltage tolerances are
also available by changing the suffix number to the tolerance desired such as
1 and 2 for tighter tolerances or 10 for wider tolerance. These plastic
encapsulated Zeners have moisture classification of Level 1 with no dry pack
required and are also available in various military equivalent screening levels
by adding a prefix identifier as also described in the Features section. They
may be operated at high maximum dc currents or full power rating with
adequate heat sinking. Microsemi also offers numerous other Zener
products to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-41 or
DO-204AL
(Plastic)
FEATURES
•
•
•
•
Higher voltages of 110 to 200 V extends the JEDEC
registered 1N4728 thru 1N4664A (3.3 to 100 V)
Standard voltage tolerances are plus/minus 5% with
a “5” suffix and 10% with “10” suffix identification
Tight tolerances available in plus or minus 2% or 1%
with “2” or “1” suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers
Surface mount package equivalents available as
SMBJ1EZ110D5 to SMBJ1EZ200D5 in the popular
DO-214AA package, or SMBG1EZ110D5 to
SMBG1EZ200D5 in the DO-215AA package
RoHS Compliant devices available by adding “e3” suffix
•
•
•
•
•
•
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range.
Zener voltage selection from 110 to 200 V.
Flexible axial-lead mounting terminals.
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands surge stresses.
High specified maximum current (I
ZM
) when
adequately heat sunk.
•
•
MAXIMUM RATINGS
•
•
•
Power dissipation at 25
o
C: 1.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
o
C to
+150
o
C.
Thermal Resistance: 45
o
C/W junction to lead at 3/8
(10mm) lead length from body, or 105
o
C/W junction
to ambient when mounted on FR4 PC board (1oz
Cu) with 4 mm
2
copper pads and track width 1 mm,
length 25 mm.
Steady-State Power: 1.0 watt at T
L
<105
o
C 3/8 inch
(10 mm) from body, or 1.0 watts at T
A
<45
o
C when
mounted on FR4 PC described for thermal
resistance (also see Figure 1).
Forward voltage @ 200 mA: 1.2 volts (maximum).
Solder Temperatures: 260
o
C for 10 s (max).
•
•
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
FINISH: Tin-lead or RoHS Compliant annealed
matte-Tin plating solderable per MIL-STD-750,
method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end
positive with respect to the opposite end
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.4 grams
See package dimensions on last page
1EZ110D5 – 1EZ200D5, e3
•
•
•
•
•
•
•
•
Copyright
©
2006
6-20-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1EZ110D5 thru 1EZ200D5, e3
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI
PART
NUMBER
(Note 1 and 5)
NOMINAL
ZENER
VOLTAGE
(Note 2)
MAXIMUM ZENER IMPEDANCE
(Note 3)
MAXIMUM
REVERSE
CURRENT
MAXIMUM
ZENER
CURRENT
@ 100ºC
TYPICAL
TEMP.
COEFF.
OF
ZENER
VOLTAGE
MAXIMUM
SURGE
CURRENT
(Note 4)
V
Z
Volts
110
120
130
140
150
160
170
180
190
200
@
I
ZT
mA
2.3
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
Z
ZT
@ I
ZT
Ohms
570
710
910
1100
1300
1400
1450
1500
1700
1900
Z
ZK
Ohms
5200
5800
6500
7000
7500
8000
8500
9000
9500
10000
@
I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
μA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
@
V
R
Volts
83.6
91.2
98.8
106.4
114
121.6
130.4
136.8
144.8
152
I
ZM
mA
8.3
8.0
6.9
6.5
5.7
5.4
5.2
4.9
4.7
4.6
α
V(BR)
o
%/
C
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.100
I
ZSM
Amps
0.15
0.14
0.13
0.12
0.12
0.11
0.10
0.10
0.10
0.10
1EZ110D5
1EZ120D5
1EZ130D5
1EZ140D5
1EZ150D5
1EZ160D5
1EZ170D5
1EZ180D5
1EZ190D5
1EZ200D5
NOTES:
1.
2.
3.
4.
5.
Suffix 5 indicates =/-5% tolerance. Suffix 10 indicates +/-10%, no suffix indicates +/-20%. Also Suffix 1 indicates +/-1% and suffix 2
indicates +/-2% on V
Z
tolerance.
o
o
Voltage measurements to be performed 90 seconds after application of dc current at
T
A
25
C
(+8, -2
C
). Test currents (I
ZT
) have been
o
selected so that power dissipation is 0.25 watts at nominal voltages. This results in a typical junction temperature rise of 10
C
.
The Zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc
Zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
Maximum Surge Current I
ZSM
is a non recurrent maximum peak reverse surge with a pulse width of 8.3 ms.
Glass devices may be ordered by replacing E in the series type number with G.
Example: 1GZ110D5
1EZ
110
D
5
% TOLERANCE
1 WATT
MOLDED
ZENER
DIODE
NOMINAL
ZENER
VOLTAGE
DEVICE
1EZ110D5 – 1EZ200D5, e3
Copyright
©
2006
6-20-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1EZ110D5 thru 1EZ200D5, e3
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
P
d
, Maximum Rated Power Dissipation (Watts)
WWW .
Microsemi
.C
OM
T
L
PACKAGE DIMENSIONS
T
A
on FR4 PC board
T
L
, Lead temperature ( C) at 3/8” from body
or T
A
on FR4 PC Board
o
FIGURE 1
POWER DERATING CURVE
1EZ110D5 – 1EZ200D5, e3
Copyright
©
2006
6-20-2006 REV C
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
嵌入式系统
