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1EZ150D5TR

Zener Diode, 150V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Microsemi
零件包装代码
DO-41
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
1300 Ω
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
JESD-609代码
e0
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
1 W
认证状态
Not Qualified
标称参考电压
150 V
表面贴装
NO
技术
ZENER
端子面层
Tin/Lead (Sn/Pb)
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
1.7 mA
Base Number Matches
1
文档预览
1EZ110D5 thru 1EZ200D5
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
DESCRIPTION
The 1EZ110D5 thru 1EZ200D5 series of axial-leaded 1.0 watt Zeners
provides voltage regulation selections with 5% tolerances from 110 to 200
volts in a DO-41 plastic package size. Other Zener voltage tolerances are
also available by changing the suffix number to the tolerance desired such as
1 and 2 for tighter tolerances or 10 for wider tolerance. These plastic
encapsulated Zeners have moisture classification of Level 1 with no dry pack
required and are also available in various military equivalent screening levels
by adding a prefix identifier as also described in the Features section. They
may be operated at high maximum dc currents or full power rating with
adequate heat sinking. Microsemi also offers numerous other Zener
products to meet higher and lower power applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-41 or
DO-204AL
(Plastic)
FEATURES
Higher voltages of 110 to 200 V extends the JEDEC
registered 1N4728 thru 1N4664A (3.3 to 100 V)
Standard voltage tolerances are plus/minus 5% with
a “5” suffix and 10% with “10” suffix identification
Tight tolerances available in plus or minus 2% or 1%
with “2” or “1” suffix respectively
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
available by adding MQ, MX, MV, or MSP prefixes
respectively to part numbers
Surface mount package equivalents available as
SMBJ1EZ110D5 to SMBJ1EZ200D5 in the popular
DO-214AA package, or SMBG1EZ110D5 to
SMBG1EZ200D5 in the DO-215AA package
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range.
Zener voltage selection from 110 to 200 V.
Flexible axial-lead mounting terminals.
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands surge stresses.
High specified maximum current (I
ZM
) when
adequately heat sunk.
Moisture classification is Level 1 per IPC/JEDEC
J-STD-020B with no dry pack required.
MAXIMUM RATINGS
Power dissipation at 25
o
C: 1.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
o
C to
+150
o
C.
Thermal Resistance: 45
o
C/W junction to lead at
o
3/8 (10mm) lead length from body, or 105 C/W
junction to ambient when mounted on FR4 PC
board (1oz Cu) with 4 mm
2
copper pads and track
width 1 mm, length 25 mm.
Steady-State Power: 1.0 watt at T
L
<105
o
C 3/8
inch (10 mm) from body, or 1.0 watts at T
A
<45
o
C
when mounted on FR4 PC described for thermal
resistance (also see Figure 1).
Forward voltage @ 200 mA: 1.2 volts (maximum).
Solder Temperatures: 260
o
C for 10 s (max).
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, tin-lead plated solderable per
MIL-STD-750, method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end
positive with respect to the opposite end
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.4 grams
See package dimensions on last page
1EZ110D5 – 1EZ200D5
0D5
Copyright
2003
07-21-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1EZ110D5 thru 1EZ200D5
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS @ 25oC
MICROSEMI
PART
NUMBER
(Note 1 and 5)
NOMINAL
ZENER
VOLTAGE
(Note 2)
MAXIMUM ZENER IMPEDANCE
(Note 3)
MAXIMUM
REVERSE
CURRENT
MAXIMUM
ZENER
CURRENT
@ 100ºC
TYPICAL
TEMP.
COEFF.
OF
ZENER
VOLTAGE
MAXIMUM
SURGE
CURRENT
(Note 4)
V
Z
Volts
110
120
130
140
150
160
170
180
190
200
@
I
ZT
mA
2.3
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
Z
ZT
@ I
ZT
Ohms
570
710
910
1100
1300
1400
1450
1500
1700
1900
Z
ZK
Ohms
5200
5800
6500
7000
7500
8000
8500
9000
9500
10000
@
I
ZK
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
R
µA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
@
V
R
Volts
83.6
91.2
98.8
106.4
114
121.6
130.4
136.8
144.8
152
I
ZM
mA
8.3
8.0
6.9
6.5
5.7
5.4
5.2
4.9
4.7
4.6
α
V(BR)
o
%/
C
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.095
+0.100
I
ZSM
Amps
0.15
0.14
0.13
0.12
0.12
0.11
0.10
0.10
0.10
0.10
1EZ110D5
1EZ120D5
1EZ130D5
1EZ140D5
1EZ150D5
1EZ160D5
1EZ170D5
1EZ180D5
1EZ190D5
1EZ200D5
NOTES:
1.
2.
3.
4.
5.
Suffix 5 indicates =/-5% tolerance. Suffix 10 indicates +/-10%, no suffix indicates +/-20%. Also Suffix 1 indicates +/-1% and suffix 2
indicates +/-2% on V
Z
tolerance.
o
o
Voltage measurements to be performed 90 seconds after application of dc current at
T
A
25
C
(+8, -2
C
). Test currents (I
ZT
) have been
o
selected so that power dissipation is 0.25 watts at nominal voltages. This results in a typical junction temperature rise of 10
C
.
The Zener impedance is derived from the 60 Hz ac voltage that results when an ac current having an rms value equal to 10% of the dc
Zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
.
Maximum Surge Current I
ZSM
is a non recurrent maximum peak reverse surge with a pulse width of 8.3 ms.
Glass devices may be ordered by replacing E in the series type number with G.
Example: 1GZ110D5
1EZ
110
D
5
% TOLERANCE
1 WATT
MOLDED
ZENER
DIODE
NOMINAL
ZENER
VOLTAGE
DEVICE
1EZ110D5 – 1EZ200D5
0D5
Copyright
2003
07-21-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1EZ110D5 thru 1EZ200D5
Silicon 1 Watt Zener Diode
SCOTTSDALE DIVISION
OUTLINE AND CIRCUIT
P
d
, Maximum Rated Power Dissipation (Watts)
WWW .
Microsemi
.C
OM
T
L
PACKAGE DIMENSIONS
T
A
on FR4 PC board
T
L
, Lead temperature ( C) at 3/8” from body
or T
A
on FR4 PC Board
o
FIGURE 1
POWER DERATING CURVE
1EZ110D5 – 1EZ200D5
0D5
Copyright
2003
07-21-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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参数对比
与1EZ150D5TR相近的元器件有:1EZ110D5TR、0805X153F250GW-C、1EZ130D5TR、1206B475K250SNW-C、1210G472C251GW-A、1210G472D251SW-B、1EZ180D5TR、1EZ190D5TR、A30N222M2ATR26。描述及对比如下:
型号 1EZ150D5TR 1EZ110D5TR 0805X153F250GW-C 1EZ130D5TR 1206B475K250SNW-C 1210G472C251GW-A 1210G472D251SW-B 1EZ180D5TR 1EZ190D5TR A30N222M2ATR26
描述 Zener Diode, 150V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN Zener Diode, 110V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN Ceramic Capacitor, Multilayer, Ceramic, 25V, 1% +Tol, 1% -Tol, X7R, -/+15ppm/Cel TC, 0.015uF, 0805, Zener Diode, 130V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN Ceramic Capacitor, Ceramic, 25V, 10% +Tol, 10% -Tol, X5R, -/+15ppm/Cel TC, 4.7uF, 1206, Ceramic Capacitor, Multilayer, Ceramic, 250V, 0.0053% +Tol, 0.0053% -Tol, NP0, -/+30ppm/Cel TC, 0.0047uF, 1210, Ceramic Capacitor, Multilayer, Ceramic, 250V, 0.0106% +Tol, 0.0106% -Tol, NP0, -/+30ppm/Cel TC, 0.0047uF, 1210, Zener Diode, 180V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN Zener Diode, 190V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL, PLASTIC, DO-41, 2 PIN Ceramic Capacitor, Multilayer, Ceramic, 100V, 0.0227% +Tol, 0.0227% -Tol, NP0, 0.0022uF
包装说明 O-PALF-W2 O-PALF-W2 , 0805 O-PALF-W2 , 1206 , 1210 , 1210 O-PALF-W2 O-PALF-W2 ,
Reach Compliance Code not_compliant not_compliant compliant not_compliant compliant compliant compliant not_compliant not_compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
端子数量 2 2 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 125 °C 150 °C 85 °C 125 °C 125 °C 150 °C 150 °C 125 °C
封装形式 LONG FORM LONG FORM SMT LONG FORM SMT SMT SMT LONG FORM LONG FORM Axial
是否Rohs认证 不符合 不符合 符合 不符合 符合 符合 不符合 不符合 不符合 -
JESD-609代码 e0 e0 e4 e0 e3 e4 e0 e0 e0 -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Gold (Au) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) MATTE TIN OVER NICKEL Gold (Au) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) TIN LEAD -
Objectid - - 916545067 - 890803465 890604493 890604534 - 2119065505 1208982213
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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