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1H3

1 A, 200 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:SY

厂商官网:http://www.shunyegroup.com/

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1H1THRU 1H8
HIGH EFFICIENCY RECTIFIERS
Reverse Voltage -
50 to 1000 Volts
R-1
Forward Current -
1.0 Ampere
FEATURES
1.0 (25.4)
MIN.
0.102 (2.6)
0.091 (2.3)
DIA.
0.140(3.50)
0.114(2.90)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
High speed switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
1.0 (25.4)
MIN.
0.025 (0.65)
0.021 (0.55)
DIA.
Dimensions in inches and (millimeters)
Case:
R-1 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.20 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
1H1
1H2
1H3
1H4
1H5
1H6
1H7
1H8
UNITS
VOLTS
VOLTS
VOLTS
Amps
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=25 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200 300 400
140 210 280
200 300 400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
50
15.0
1.0
25.0
1.3
5.0
100.0
70
12.0
50.0
-65 to +150
1.70
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted
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RATINGS AND CHARACTERISTIC CURVES 1H1 THRU 1H8
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
£PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
1,000
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
100
1
TJ=100 C
10
0.1
1H1-1H3
1H4-1H5
1H6-1H8
0.01
0.2
0.6
1.0
1.4
1.8
2.0
1
TJ=25 C
0.1
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
100
JUNCTION CAPACITANCE, pF
10
10
1
1H1-1H5
1H6-1H8
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
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参数对比
与1H3相近的元器件有:1H1、1H4、1H2、1H6、1H5、1H8、1H7。描述及对比如下:
型号 1H3 1H1 1H4 1H2 1H6 1H5 1H8 1H7
描述 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE
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