1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
1000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES FEATURES
●
●
●
●
●
●
Low profile package
Ideal for automated placement
Glass passivated junction
Built-in strain relief
Excellent clamping capability
Fast response time: Typically less than
1.0ps from 0 volt to BV min
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
WM
V
BR
(uni-directional)
V
BR
(bi-directional)
P
PPSM
T
J MAX
Package
Configuration
VALUE
8.55 – 85.5
9.5 - 105
9.5 - 105
1000
175
Single die
UNIT
V
V
V
W
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
TV
Monitor
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Moisture sensitivity level: level 1, per J-STD-020
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.11 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Non-repetitive peak impulse power dissipation with
10/1000us waveform
(1)
Steady state power dissipation at T
A
=25°C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
(2)
Forward Voltage @ I
F
=50A for Uni-directional only
Junction temperature
SYMBOL
P
PPSM
P
tot
I
FSM
V
F
T
J
PART NUMBER
1000
5
100
3.5/5.0
-55 to +175
-55 to +175
UNIT
W
W
A
V
°C
°C
T
STG
Storage temperature
Notes:
1.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
2.
V
F
=3.5V for Devices of V
BR
≦50V
and V
F
=5.0V Max. for Devices V
BR
>50V
Devices for Bipolar Applications
1.
For Bidirectional use CA suffix
1
Version:G1701
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance
Junction-to-ambient thermal resistance
SYMBOL
R
ӨJL
R
ӨJA
LIMIT
20
100
UNIT
°C/W
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Device
Marking
Code
Breakdown
Voltage
V
BR
@I
T
(V)
Test
Current
I
T
(mA)
Maximum
Stand-Off
Reverse
Voltage
Leakage
@V
WM
@V
WM
(V)
(µA)
Maximum Peak
impulse
Current
I
PP
(A)
(Note 2)
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
Device
Min.
1KSMB10A
1KSMB10CA
1KSMB11A
1KSMB11CA
1KSMB12A
1KSMB12CA
1KSMB13A
1KSMB13CA
1KSMB15A
1KSMB15CA
1KSMB16A
1KSMB16CA
1KSMB18A
1KSMB18CA
1KSMB20A
1KSMB20CA
1KSMB22A
1KSMB22CA
1KSMB24A
1KSMB24CA
1KSMB27A
1KSMB27CA
1KSMB30A
1KSMB30CA
1KSMB33A
1KSMB33CA
1KSMB36A
1KSMB36CA
1KSMB39A
1KSMB39CA
1KSMB43A
1KSMB43CA
1KSMB47A
1KSMB47CA
1KSMB51A
1KSMB51CA
1KSMB56A
1KSMB56CA
1KSMB62A
1KSMB62CA
1KSMB68A
1KSMB68CA
A10E
N10E
A10F
N10F
A10G
N10G
A10H
N10H
A10I
N10I
A10J
N10J
A10K
N10K
A10L
N10L
A10M
N10M
A10N
N10N
A10O
N10O
A10P
N10P
A10Q
N10Q
A10R
N10R
A10S
N10S
A10T
N10T
A10U
N10U
A10V
N10V
A10W
N10W
A10X
N10X
A10Y
N10Y
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
Max.
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21.0
23.1
25.2
28.4
31.5
34.7
37.8
41.0
45.2
49.4
53.6
58.8
65.1
71.4
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2
8.55
9.40
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
10.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
69.0
64.1
59.9
54.9
47.2
44.4
39.2
36.1
32.7
30.1
26.7
24.2
21.9
20.0
18.6
16.9
15.4
14.3
13.0
11.8
10.9
14.5
15.6
16.7
18.2
21.2
22.5
25.5
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
Version:G1701
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
Device
Marking
Code
Breakdown
voltage
V
BR
@I
T
(V)
(Note 1)
Test
current
I
T
(mA)
Maximum
Maximum
Stand-Off
peak impulse
Reverse
Voltage
current
leakage
@V
WM
I
PP
@V
WM
(V)
(A)
(µA)
(Note 2)
Maximum
clamping
voltage
V
C
@I
PP
(V)
Device
Min.
Max.
1.0
1.0
1.0
1.0
9.7
8.8
8.0
7.3
103
113
125
137
1KSMB75A
A10Z
71.3
78.8
1.0
64.1
1KSMB75CA
N10Z
1KSMB82A
B10A
77.9
86.1
1.0
70.1
1KSMB82CA
O10A
1KSMB91A
B10B
86.5
95.5
1.0
77.8
1KSMB91CA
O10B
1KSMB100A
B10C
95
105
1.0
85.5
1KSMB100CA
O10C
Notes:
1.
V
BR
measure after I
T
applied for 300μs, I
T
=square wave pulse or equivalent.
2.
All terms and symbols are consistent with ANSI/IEEE C62.35.
3.
For Bidirectional use CA suffix
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
R5
1KSMBxxxx
(Note 1)
H
R4
M4
G
PACKING CODE
SUFFIX(*)
PACKAGE
SMB
SMB
SMB
PACKING
850 / 7" Plastic reel
3,000 / 13" Paper reel
3,000 / 13" Plastic reel
Note :
1. "xxxx" defines voltage from 10V (1KSMB10A) to 100V (1KSMB100CA)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
1KSMB39AHR5G
PART NO.
1KSMB39A
PART NO.
SUFFIX
H
PACKING
CODE
R5
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:G1701
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Peak Pulse Power Rating Curve
100
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
Fig2. Pulse Derating Curve
125
P
PPM
, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
10
100
75
50
25
1
1
10
100
1000
0
0
25
50
75
100
125
150
175
200
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig3. Clamping Power Pulse Waveform
IFSM, PEAK FORWARD SURGE CURRENT (A)
Fig4. Maximum Non-Repetitive Forward Surge
Current Unidirectional Only
100
8.3ms Single Half Sine Wave
140
I
PPM
, PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
0.5
1
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
Rise time tr=10μs to 100%
Peak value
I
PPM
Half value-I
PPM
/2
10/1000μs, waveform
td
1.5
2
2.5
3
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
PERCENT OF RATED PEAK (ms)
t, TIME REVERSE VOLTAGE (%)
4
Version:G1701
1KSMB10A - 1KSMB100CA
Taiwan Semiconductor
Fig5. Typical Junction Capacitance
CJ, JUNCTION CAPACITANCE (pF)
A
10000
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
MEASURED at
STAND-OFF
VOLTAGE,Vw
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
5
Version:G1701
ADI参考电路
