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1N21WE

SILICON, S BAND, MIXER DIODE

器件类别:分立半导体    二极管   

厂商名称:New Jersey Semiconductor

厂商官网:http://www.njsemi.com

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器件参数
参数名称
属性值
Reach Compliance Code
unknow
Base Number Matches
1
文档预览
J,E,\$,£,U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, O
ne..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
S - X Band Point Contact Mixer Diodes
Description
IN series of Point
Contact Mixer diodes is designed for
applications from S-Band through X-
Band. Each device in this series is in a
cartridge package specially designed
for low noise figure performance.
These diodes employ epitaxial silicon
optimized for low noise figure and
wide bandwidth and are used in single
or multiple device mixer applications.
Applications
This IN series of Point Contact Mixers
is suitable for use in waveguide,
coaxial and stripline applications.
Features
• Mechanical Reliability
• Low Noise Figure
• Wide Bandwidth
Packaging
• Cartridge Style
Typical Performance
7
.01
200
300
400
500
600
FORWARD VOLTAGt
(mV)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
Point Contact Diodes: 1N Series
Electrical Characteristics
Noise Figure
3.060 GHz
LO^I.OmW
Rl = 100 Ohms
MAX
(dB)
8.5
7.5
7.0
7.0
6.0
5.5
5.5
8.5
7.5
7.0
6.5
6.0
VSWR
3.060 GHz
LO = 1.0mW
Rl = 100 Ohms
MAX
(Ratio)
IF Impedance
3.060 GHz
LO = 1.0mW
Rl = 100 Ohms
MIN/MAX
(Ohms)
325
325
350
350
350
350
350
335
335
335
335
335
- 465
- 465
- 450
- 450
- 450
- 450
- 450
- 465
- 465
- 465
- 465
- 465
Conversion Loss
3.060GHZ
LO = 1.0mW
Rl = 100 Ohms
MAX
(dB)
.
Case
Style
CS100
CS100
CS100
CS101
CS100
CS100
CS101
CS101
CS101
CS101
CS101
CS101
Part
Number
1N21C
1N21D
1N21E
1N21WE
1N21F
1N21G
1N21WG
1N416C
1N416D
1N416E
1N416F
1N416G
1.5
1.5
1.3
1.3
1.3
1.5
1.3
1.3
1.3
1.3
5.0
5.0
7.0
6.5
6.0
Noise Figure
9.375 GHz
LO = 1.0mW
Rl - 100 Ohms
MAX
(dB)
12.0
11.0
10.0
9.0
8.5
7.5
7.5
7.0
6.5
6.5
6.0
9.0
8.5
7.5
7.0
6.5
6.0
VSWR
9.375 GHz
LO = 1.0mW
Rl = 100 Ohms
MAX
(Ratio)
IF Impedance
9.375 GHz
LO = 1.0mW
Rl = 100 Ohms
MIN/MAX
(Ohms)
200
200
335
335
335
335
335
335
335
335
335
335
335
335
335
335
335
- 600
- 600
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
- 465
Conversion Loss
9.375 GHz
LO = 1.0mW
Rl = 100 Ohms
MAX
(dB)
.
-
Case
Style
CS100
CS100
CS100
CS100
CS100
CS100
CS101
CS100
CS100
CS101
CS100
CS101
CS101
CS101
CS101
CS101
CS101
Part
Number .
1N23
1N23A
1N23B
1N23C
1N23D
1N23E
1N23WE
1N23F
1N23G
1N23WG
1N23H
1N415C
1N415D
1N415E
1N415F
1N415G
1N415H
-
1.5
1.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.3
1.3
1.3
1.3
1.3
7.0
7.0
6.5
6.0
6.0
5.5
-
7.0
6.5
6.0
5.5
Notes;
For matched Fwd pair use suffix M after P/N.
For reverse device use suffix R.
For matched Fwd and Rev use suffix MR.
Maximum Ratings
Operating Temperature
Storage Temperature
-55°CtO + 150°C
-65°C to + 200°C
P3
P3a
.292 . 0 5 2
.296
.800
.840
.799
."837
.051
TosT
292
.047
29T
.175
.195
. 197
.~2~OT
240
.240
MAX
193
.566
.591
.575
.092
ToT?
193 .195
T9T .IT?
.TTo
,800
rrso"
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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