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1N23BMR

Mixer Diode

器件类别:分立半导体    二极管   

厂商名称:Massachusetts Bay Technologies

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器件参数
参数名称
属性值
厂商名称
Massachusetts Bay Technologies
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
LOW NOISE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
MIXER DIODE
频带
S BAND TO X BAND
最大噪声指数
10 dB
元件数量
1
最高工作温度
150 °C
最低工作温度
-55 °C
技术
POINT CONTACT
Base Number Matches
1
文档预览
Point Contact
Diodes
Point Contact Diodes:
1N Series
S - X Band Point Contact Mixer Diodes
Description
This
MicroMetrics
1N series of Point
Contact Mixer diodes is designed for
applications from S-Band through X-
Band. Each device in this series is in a
cartridge package specially designed
for low noise figure performance.
These diodes employ epitaxial silicon
optimized for low noise figure and
wide bandwidth and are used in single
or multiple device mixer applications.
Applications
This 1N series of Point Contact Mixers
is suitable for use in waveguide,
coaxial and stripline applications.
Features
• Mechanical Reliability
• Low Noise Figure
• Wide Bandwidth
Packaging
• Cartridge Style
Typical Performance
10.0
1.0
FORWARD CURRENT
(mA)
.1
.01
.001
0
100
200
300
400
500
600
FORWARD VOLTAGE
(mV)
70
MicroMetrics, Inc.
136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Electrical Characteristics
Noise Figure
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(dB)
8.5
7.5
7.0
7.0
6.0
5.5
5.5
8.5
7.5
7.0
6.5
6.0
VSWR
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(Ratio)
-
-
1.5
1.5
1.3
1.3
1.3
1.5
1.3
1.3
1.3
1.3
IF Impedance
3.060 GHz
LO = 1.0 mW
RI = 100 Ohms
MIN/MAX
(Ohms)
325 - 465
325 - 465
350 - 450
350 - 450
350 - 450
350 - 450
350 - 450
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
Conversion Loss
3.060GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(dB)
-
-
-
-
-
5.0
5.0
-
-
7.0
6.5
6.0
Case
Style
CS100
CS100
CS100
CS101
CS100
CS100
CS101
CS101
CS101
CS101
CS101
CS101
Part
Number
1N21C
1N21D
1N21E
1N21WE
1N21F
1N21G
1N21WG
1N416C
1N416D
1N416E
1N416F
1N416G
Noise Figure
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(dB)
12.0
11.0
10.0
9.0
8.5
7.5
7.5
7.0
6.5
6.5
6.0
9.0
8.5
7.5
7.0
6.5
6.0
VSWR
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(Ratio)
-
-
1.5
1.5
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.3
1.3
1.3
1.3
1.3
IF Impedance
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MIN/MAX
(Ohms)
200 - 600
200 - 600
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
335 - 465
Conversion Loss
9.375 GHz
LO = 1.0 mW
RI = 100 Ohms
MAX
(dB)
-
-
-
-
-
7.0
7.0
6.5
6.0
6.0
5.5
-
-
7.0
6.5
6.0
5.5
Case
Style
CS100
CS100
CS100
CS100
CS100
CS100
CS101
CS100
CS100
CS101
CS100
CS101
CS101
CS101
CS101
CS101
CS101
Part
Number
1N23
1N23A
1N23B
1N23C
1N23D
1N23E
1N23WE
1N23F
1N23G
1N23WG
1N23H
1N415C
1N415D
1N415E
1N415F
1N415G
1N415H
Notes:
For matched Fwd pair use suffix M after P/N.
For reverse device use suffix R.
For matched Fwd and Rev use suffix MR.
Maximum Ratings
Operating Temperature
Storage Temperature
-55°C to + 150°C
-65°C to + 200°C
MicroMetrics, Inc.
136 Harvey Road, Building C, Londonderry, NH 03053
Voice: 603-641-3800, Fax: 603-641-3500, Internet: www.micrometrics.com, E-mail: serv@micrometrics.com
Point Contact
Diodes
71
Point Contact Diodes:
1N Series
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