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1N3155A-1-2%E3TR

Zener Diode, 8.4V V(Z), 4.76%, 0.5W, Silicon, DO-204AA, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS, DO-7, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-7
包装说明
O-LALF-W2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
METALLURGICAL BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-204AA
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
8.4 V
表面贴装
NO
技术
ZENER
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
电压温度Coeff-Max
0.42 mV/°C
最大电压容差
4.76%
Base Number Matches
1
文档预览
1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
DESCRIPTION
The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes
provides a selection of 8.4 V nominal voltages and temperature coefficients to
as low as 0.001 %/
o
C for minimal voltage change with temperature when
operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are
also available in JAN, JANTX, and JANTXV military qualifications. As a further
option for commercial product, they are available as RoHS Compliant with an
e3 suffix added to the part number. Microsemi also offers numerous other
Zener Reference Diode products for a variety of other voltages from 6.2 V to
200 V.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-7
(DO-204AA)
FEATURES
JEDEC registered 1N3154 thru 1N3157A series
Standard reference voltage of 8.4V +/- 5% with tighter
tolerances available
1N3154, 3155, 3156, and 3157 also have military
qualification to MIL-PRF-19500/158 up to the
JANTXV level by adding JAN, JANTX, or JANTXV
prefixes to part numbers as well as “-1” suffix, e.g.
JANTX1N3157-1, etc.
Internal metallurgical bonds
JANS Equivalent available via SCD
Radiation Hardened devices available by changing
1N prefix to RH, e.g. RH3156, RH3157, RH3157A,
etc. Also consult factory for “RH” data sheet
brochure
RoHS Compliant devices available by adding an “e3”
suffix (not applicable to military)
APPLICATIONS / BENEFITS
Provides minimal voltage changes over a broad
temperature range
For instrumentation and other circuit designs
requiring a stable voltage reference
Maximum temperature coefficient selections
available from 0.01%/ºC to 0.001%/ºC
Tight reference voltage tolerances at the 8.4 V
nominal is available by adding tolerance 1%, 2%,
3%, etc. after the part number for identification e.g.
1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
MAXIMUM RATINGS
Operating & StorageTemperature: -65
o
C to +175
o
C
DC Power Dissipation: 500 mW @ T
L
= 25
o
C and
maximum current I
ZM
of 55 mA. NOTE: For optimum
voltage-temperature stability, I
Z
= 10.0 mA (less than
90 mW in dissipated power)
Solder temperatures: 260
o
C for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass case with DO-7
(DO-204AA) package
TERMINALS: Tin-Lead (military) or RoHS Compliant
annealed matte-Tin plating solderable per MIL-STD-
750, Method 2026
MARKING: Part number and cathode band
POLARITY: Reference diode to be operated with the
banded end positive with respect to the opposite end
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.2 grams.
See package dimensions on last page
1N3154 - 1N3157A, e3
Copyright
©
2005
7-18-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
*ELECTRICAL CHARACTERISTICS @ 25
o
C, unless otherwise specified
JEDEC
TYPE
NUMBERS
(Notes 1, 5
& 6)
ZENER
VOLTAGE
V
Z
@ I
ZT
(Note 1)
VOLTS
ZENER
TEST
CURRENT
I
ZT
mA
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
Z
ZT
OHMS
MAXIMUM
REVERSE
CURRENT
I
R
@ 5.5 V
VOLTAGE
TEMPERATURE
STABILITY
(Note 3 & 4)
ΔV
ZT
MAXIMUM
mV
EFFECTIVE
TEMPERATURE
COEFFICIENT
α
VZ
%/ C
o
TEMPERATURE
RANGE
1N3154
1N3154A
1N3155
1N3155A
1N3156
1N3156A
1N3157
1N3157A
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
8.00-8.80
10
10
10
10
10
10
10
10
15
15
15
15
15
15
15
15
μA
10
10
10
10
10
10
10
10
o
C
130
172
65
86
26
34
13
17
-55 to +100
-55 to +150
-55 to +100
-55 to +150
-55 to +100
-55 to +150
-55 to +100
-55 to +150
0.01
0.01
0.005
0.005
0.002
0.002
0.001
0.001
*JEDEC Registered Data.
NOTES:
1.
2.
3.
4.
5.
6.
When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance,
e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc.
o
Measured by superimposing 1.0 mA ac rms on 10 mA dc @ 25 C.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the
specified mV change at any discrete temperature between the established limits.
Voltage measurements to be performed 15 seconds after application of dc current.
The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by
adding JAN, JANTX, or JANTXV prefix to part numbers as well as “-1” suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc.
Designate Radiation Hardened devices with “RH” prefix instead of “IN”, i.e. RH3157A instead of 1N3157A.
GRAPHS
Change in temperature coefficient (mV/ C)
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 10mA.
EXAMPLE: A diode in this series is operated at a current of
10mA and has specified Temperature Coefficient (TC) limits of
o
+/-0.005%/ C. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 7.5mA, the
o
new TC limits (%/ C) can be estimated using the graph in
FIGURE 1.
At a test current of 7.5mA the change in Temperature Coefficient
o
(TC) is approximately –0.0012%. C. The algebraic sum of +/-
o
o
0.005% C and –0.0012%/ C gives the new estimated limits of
+0.0038%/oC and -0.0062%/oC.
Change in temperature coefficient (%/ C)
o
o
1N3154 - 1N3157A, e3
I
Z
– Operating Current (mA)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
WITH CHANGE IN OPERATING CURRENT.
Copyright
©
2005
7-18-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
1N3154 thru 1N3157, A, -1, e3
8.4 Volt Temperature Compensated Zener
Reference Diodes
SCOTTSDALE DIVISION
WWW .
Microsemi
.C
OM
Δ
V
Z
– Change in Zener Voltage (mV)
This curve in Figure 2 illustrates the change of
diode voltage arising from the effect of
impedance. It is in effect, an exploded view of
the zener operating region of the I-V
characteristic.
In conjunction with Figure 1, this curve can be
used to estimate total voltage regulation under
conditions of both varying temperature and
current.
I
Z
– Operating Current (mA)
FIGURE 2
TYPICAL CHANGE OF ZENER VOLTAGE
WITH CHANGE IN OPERATING CURRENT.
DIMENSIONS
1N3154 - 1N3157A, e3
All dimensions in INCH
mm
Copyright
©
2005
7-18-2005 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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