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1N4003

1 A, SILICON, SIGNAL DIODE, DO-41
1 A, 硅, 信号二极管, DO-41

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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器件:1N4003

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
ALF-2, DO-41, 2 PIN
状态
TRANSFERRED
包装形状
包装尺寸
LONG FORM
端子形式
线
端子位置
AXIAL
包装材料
玻璃
结构
单一的
壳体连接
隔离
二极管元件材料
最大功耗极限
1 W
二极管类型
信号二极管
最大平均正向电流
1 A
文档预览
1N4001 THRU 1N4007
Features
· The plastic package carries Underwrites Laboratory
Flammability Classification 94V-0
· Construction utilizes void-free molded plastic technique
· Low reverse leakage
· High forward surge current capability
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5lbs.(2.3kg).
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=75℃
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) at T
A
=75℃
Maximum instantaneous forward voltage
at 1.0A
Maximum reverse current
at rated DC blocking voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JA
JL
C
J
T
A
T
J
T
STG
1N
4001
50
35
50
1N
4002
100
70
100
1N
4003
200
140
200
1N
4004
400
280
400
1.0
30.0
1.1
5.0
50.0
50.0
25.0
15.0
+150
1N
4005
600
420
600
1N
4006
800
560
800
1N
4007
1000
700
1000
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
℃/W
pF
Typical thermal resistance (Note 2)
Typical junction capacitance (Note 1)
Maximum DC blocking voltage temperature
Operating and storage temperature range
-50 to +175
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from junction to ambient and from junction to lead at 0.375"(9.5mm) lead length, P.C.B. mounted
RATINGS AND CHARACTERISTIC CURVES 1N4001 THRU 1N4007
FIG.1-FORWARD CURRENT DERATING CURVE
1.0
AVERAGE FORWARD CURRENT AMPERES
0.8
INSTANTANEOUS FORWARD CURRENT(AMPERES)
0.6
0.4
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
0.2
0
0
1
25
50
75
100
125
150
175
T
J
=25℃
LEAD TEMPERATURE (
℃)
0.1
PULSE WIDTH=300
μ
S
1% DUTY CYCLE
FIG.3-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
30
20
10
0
1
10
NUMBER OF CYCLES AT 60Hz
100
INSTANTANEOUS REVERSE CURRENT (
μA
)
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.01
0.6
0.8
1.0
1.2
1.4
1.5
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
PEAK FORWARD SURGE
CURRENT (AMPERES)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
10
T
J
=100℃
1.0
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE(pF)
0.1
T
J
=25℃
0.01
T
J
=25℃
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10
1
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
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参数对比
与1N4003相近的元器件有:1N4001、1N4004。描述及对比如下:
型号 1N4003 1N4001 1N4004
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
端子数量 2 2 2
元件数量 1 1 1
加工封装描述 ALF-2, DO-41, 2 PIN MINIATURE PACKAGE-2 CASE R-1, 2 PIN
状态 TRANSFERRED ACTIVE ACTIVE
包装形状
包装尺寸 LONG FORM LONG FORM LONG FORM
端子形式 线 线 线
端子位置 AXIAL AXIAL AXIAL
包装材料 玻璃 UNSPECIFIED UNSPECIFIED
结构 单一的 单一的 单一的
壳体连接 隔离 隔离 隔离
二极管元件材料
二极管类型 信号二极管 信号二极管 信号二极管
最大平均正向电流 1 A 1 A 1 A
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