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1N4003GP

1 A, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:FCI [First Components International]

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Data Sheet
1.0 Amp MEGARECTIFIERS
Mechanical Dimensions
JEDEC
D0-41
.080
.107
.205
.160
1.00 Min.
1N4001GP . . . 7GP Series
Description
.031 typ.
Features
n
HIGH TEMPERATURE METALLURGI-
CALLY BONDED CONSTRUCTION
n
SINTERED GLASS CAVITY-FREE
JUNCTION
n
CAPABILITY OF MEETING
ENVIRONMENTAL STANDARDS
OF MIL-S-19500
Electrical Characteristics @ 25
o
C.
Maximum Ratings
Peak Repetitive Reverse Voltage...V
RRM
RMS Reverse Voltage...V
R(rms)
DC Blocking Voltage...V
DC
Average Forward Rectified Current...I
F(av)
Current 3/8" Lead Length @ T
A
= 75°C
Non-Repetitive Peak Forward Surge Current...I
FSM
½ Sine Wave Superimposed on Rated Load
Forward Voltage @ 1.0A...V
F
Full Load Reverse Current...I
R
(av)
Full Cycle Average @ T
A
= 75°C
DC Reverse Current...I
R
@ Rated DC Blocking Voltage
T
A
= 25°C
T
A
= 125°C
1N4001GP . . . 7GP Series
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007
GP
GP
GP
GP
GP
GP
GP
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
µAmps
............................................. 1.0 ...............................................
............................................. 3 0 ...............................................
............................................. 1.1 ...............................................
............................................. 3 0 ...............................................
............................................. 5 ...............................................
............................................. 5 0 ...............................................
............................................. 8.0 ...............................................
............................................. 4 5 ...............................................
.........................................
2.0
..........................................
µAmps
µAmps
pF
°C
/ W
µS
°C
Typical Junction Capacitance...C
J
(Note 1)
Typical Thermal Resistance...R
θJA
(Note 2)
Typical Reverse Recovery Time...t
RR
(Note 3)
Operating & Storage Temperature Range...T
J
, T
STRG
......................................... -65 to 175 ..........................................
Page 6-4
Data Sheet
1.0 Amp MEGARECTIFIERS
Forward Current Derating Curve
60 Hz
RESISTIVE OR
INDUCTIVE LOAD
0.375″ (9.5mm) LEAD LENGTH
T
A
= Ambient Temperature (°C)
°
Non-Repetitive
Peak Forward Surge Current
T
J
= T
J
max.
8.3 mS Single Half Sine Wave
(Jedec Method)
Typical Junction Capacitance
T
J
= 25°C
°
f = 1.0 MHZ
V
SIG
= 50mVp-p
Amps
pF
Number of Cycles @ 60 HZ
Typical Instantaneous Forward Characteristics
Reverse Voltage (Volts)
Typical Reverse Characteristics
T
J
= 100°C
°
Amps
µ
Amps
T
J
= 25°C
°
Pulse Width = 300µS
µ
1% Duty Cycle
°
T
J
= 25°C
Ratings at
25 Deg. C ambient
temperature
unless otherwise
specified.
Single Phase Half
Wave, 60 HZ
Resistive or
Inductive Load.
For Capacitive
Load, Derate
Current by 20%.
Volts
Percent of Rated Peak Voltage
NOTES:
1. Measured @ 1 MHZ and applied reverse voltage of 4.0V.
2. Thermal Resistance from Junction to Ambient at 3/8" Lead Length, P.C. Board Mounted.
3. Reverse Recovery Condition I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A.
Page 6-5
1N4001GP . . . 07GP Series
Amps
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参数对比
与1N4003GP相近的元器件有:1N4001GP、1N4002GP、N4001GP、1N4007GP、1N4006GP、1N4005GP、1N4004GP。描述及对比如下:
型号 1N4003GP 1N4001GP 1N4002GP N4001GP 1N4007GP 1N4006GP 1N4005GP 1N4004GP
描述 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
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