Plastic-Encapsulate Diodes
1.0 AMP. Surface Mount Rectifiers
FEATURES
For surface mounted application
Glass passivated junction chip.
Low forward voltage drop
High current capability
Easy pick and place
High surge current capability
Plastic material used carries Underwriters
Laboratory Classification 94V-0 260
o
C / 10 seconds at terminals
High reliability grade (AEC Q101 qualified)
7
4.50
52
M1---M7
0
32
MECHANICAL DATA
Case: Molded plastic
Terminals: Pure tin plated, lead free
Polarity: Indicated by cathode band
Weight: 0.064 gram
MAXIMUM RATINGS
AND
solderable per J-STD-002B and JESD22-B102D.
Packaging: 12mm tapeper EIA STD RS-481
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For
capacitive load, derate current by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at
TL =100
O
C
Peak Forward Surge Current 8.3ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method) Instantaneous Forward Voltage at 1 A
Maximum
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance 1)
Maximum Thermal Resistance 2)
Operating and Storage Temperature Range
1) Measured at 1MHz and applied reverse voltage of 4 V
2) 8 mm2 (0.013 mm thick) land areas
MAKO Semiconductor Co., Limited
ht
tp
ELECTRICAL CHARACTERISTICS
DO-214AC (SMA)
:/
TA = 25
O
C
TA = 125 C
O
/w
ww
Symbols
VRRM
VRMS
VDC
I(A)
.m
IFSM
VF
IR
CJ
R
θJL
TJ, TS
4008-378-873
ak
M1
50
35
50
e
os
M2
100
70
100
M3
200
M4
400
280
400
1
M5
600
420
600
M6
800
560
800
M7
1000
700
1000
Unit
V
V
V
A
mi
140
200
http://www.makosemi.hk/
Page:P2-P1
.h
5
- 50 to + 150
k/
30
1.1
200
15
30
O
A
V
µA
pF
C/W
O
C
Plastic-Encapsulate Diodes
M1---M7
Typical Characteristics
30
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
2.0
SINGLE PHASE
HALF WAVE 60Hz
RESISTIVE OR
INDUCTIVE LOAD
P.C.B MOUNTED
ON 0.315x0.315"(8.0x8.0mm)
COPPER PAD AREAS
25
20
15
10
5
8.3ms Single Half Sine Wave
(JEDEC Method)
1.0
25 50 75 100 125 150175
LEAD TEMPERATURE .
o
C
Fig. 1-FORWARD CURRENT
DERATING CURVE
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
Fig. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
INSTANTANEOUS FORWARD CURRENT,
MICROAMPERES
ht
40
60
0.1
tp
T
j
=75
o
C
1
:/
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
100
10
1
0.1
0.01
0.001
0
20
T
j
=125
o
C
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
T
j
=25
o
C
80 100 120 140
PERCENT OF PEAK REVERSE VOLTAGE, %
Fig. 3-TYPICAL REVERSE
CHARACTERISTICS
/w
ww
.m
ak
e
os
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD
VOLTAGE , VOLTS
Fig. 4-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
mi
.h
k/
1000
THERMAL IMPEDANCE (oC/W)
500
200
100
50
20
10
5
2
1
CAPACITANCE. pF
Units Mounted On
20in
2
(5.4mm
2
)+0.5mil
inches(0.013mm)
Thick Copper Land Areas
100
50
20
10
5
2
1
T
j
=25
o
C
f=1.0MHz
Vsig=50mVp-p
0
1.0
10
100
1000
0.01
10
100
REVERSE VOLTAGE VOLTS
Fig. 6-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE VOLTS
Fig. 5-TRANSIENT THERMAL IMPEDANCE
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/
Page:P2-P2
