AMERICAN
POWER
DEVICES
D
0737135
•QDDObfl
4 .T
t
«APD
american
SEMICONDUCTORS
p o w e r devices,
inc.
1N4156,1N4157
1N4829,1N4830
1N5179
MPD200, MPD300, MPD400
Stabistor diodes — high speed,
multi-pellet, ultra low leakage
FEATURES
•
•
•
•
Voltages from 1.210 to 3.720
Tightly controlled forward voltages
Double plug DO-35 package
Multi-pellet design
MECHANICAL
CHARACTERISTICS
MAXIMUM RATINGS
•
•
•
•
Junction Temperature -65°C to +175°C
Storage Temperature -65°C to + 200°C
DC Power Dissipation: 400mW @ T = 30°C
Derate above 25°C: 2.67mW/°C
L
0 090
2.29
MAX
DIA
J J J f i S MIN
25.400
Stabistors are high conductance diffused silicon diodes with
tightly controlled forward voltage characteristics. They are
generally operated in the forward region and are designed to be
used as stable forward reference sources.
These stabistors are manufactured with 2, 3 or 4 planar passi-
vated epitaxial diode pellets in series mounted in a subminiature
double heatsink package. This structure makes possible
stabistors having controlled conductance and ultra low leakge
current. In addition, they have a linear temperature response
[mv/°c] over their ambient temperature range. These diodes are
useful as signal limiters, level shifters in transistor logic, meter
protectors, bias regulators and in other applications requiring a
tight tolerance of voltage levels.
Stabistors are also ideal in such applications as voltage regula-
tion, sensing, comparing, protecting and in computer circuitry.
Their highly controlled conductance is necessary for the design
of clippers, dc coupling circuits, clamping circuits, low power
clipping, level shifting, voltage regulation, temperature stabiliza-
tion of transistor base-emitter biasing network and in many other
applications.
0.019*0.088 O I A -
0 457/0 559 "
OJOO
5 08
'
' 000
25400
U I M
M
I
N
FIGURE 1
all dimensions In INCH
mm
C A S E : Hermetically sealed
glass package (DO-35)
FINISH: Corrosion resistant.
Leads are tin plated.
POLARITY: Cathode banded.
WEIGHT: 0.2 grams (typ).
T h i s s e r i e s a l s o o f f e r e d in D O - 7 p a c k a g e .
C o n s u l t factory for availability.
ELECTRICAL CHARACTERISTICS @ 25°C
Forward Voltage, V , Volts
Minimum Reverse
Breakdown Voltage,
Type
Min.
BV@5uA
Max.
Min.
@
1.0mA
©10mA
© 1 0 0 mA
@
25"C
Max.
Min.
Max.
nA
uA
V
Maximum Reverse Current
Maximum
Capacitanc
® 0 Volts
f = lMHz,
PF
Mini
PC
Maxl
pC
Stored
Charge, Q
@ 1mA
<3>
150X
<s>
1N4156
1N4157
1N5179
1N4829
1N4830
MPD200
MPD300
MPD400
30
30
30
30 @ 100uA
30 @
100uA
30
60
90
1.21
1.85
2.20
0.99
1.63
1.22
1.84
2.47
1.41
2.05
2.80
1.44
2.08
1.34
2.03
2.71
1.38
2.12
2.60
1.16
1.90
1.39
2.10
2.80
1.58
2.32
3.20
1.61
2.35
1.54
2.33
3.07
1.54
2.36
3.00
1.35
2.15
1.60
2.40
3.16
1.84
2.66
3.72
1.87
2.69
1.76
2.65
3.49
50
50
50
100
100
30
30
30
25 @
50
50
50
100°C
20
20
20
20
20
30
30
30
25
20
20
25
20
15(typ)
i0(typ)
7(typ)
50
50
50
—
500
500
500
...
...
400
400
300
2 5 03 1 0 0 ° C
...
75
75
60
...
...
...
IPN= 0737135 0000069 325
7 1 8
0 9°5-3067 • tel.. 617 592-6090 • fax. 617 592-0677
1
AMERICAN POWER DEVICES
S'.E D
D737135 OOOOOb^ 3ES
IAPD
american
SEMICONDUCTORS
p o w e r devices, inc.
1N4156,1N4157
1N5179
1N4829,1N48?
MPD200, MPD300, MPD4(
n
Forward Voltage |
Characteristics
T» • 2 5 * C
I
4
<f
1
8
»
1-0 1.1 1.2 1.3
1.4
1 5 1 6
1 7 1*
Vr -
1.9 2 0 2 1 2 2 2.3
2.4
2.5 2.6 2.7 2 8 2.9 3 0 3.1
FORWARD V O L T A G E - V
3.2 3 3
3.4
3.5
Figure 1 F O R W A R D V O L T A G E vs FORWARD C U R R E N T
5000
Stored C h » r g t
v» Forward Current.
R a n t • of Values
I
m
1.0
5.0
10.0
20 0
05
•'
Ir -
5
1
5
10
50
100
FORWARD C U R R E N T - m A
">
100
I
0.5
Ir -
FORWARD CURRENT - m A
Figure 2 TYPICAL S T O R E D C H A R G E v s F O R W A R D C U R R E N T
Figure 3 T E M P E R A T U R E COEFFICIENT v s F O R W A R D C U R R E N T
IPN= 0737135 0000070 047
69 bennett street. Ivnn, ma 01905-3067 • tel.: 617 592-6090 • fax- 617 592-0677
STABISTORS
Part*
Voltage
Tolerance
5%(±V)
Max. Leakage Current
l
«10V(MA)
R
Test Current
MRNA)
Max. Dynamic Impedance
z@
T
Typical Temp. Coefficient
T (WC)
C
IT(Q)
1N816
1N3896
1N3897
1N3898
1N4829
1N4830
BZ102/0V7
BZ102/1V4
BZ102/2V1
BZ102/2V8
BZ102/3V4
BZX75C1V4
BZX75C2V1
BZX75C2V8
BZX75C3V6
G129
G130
ST22
ST23
ST37
ST38
ST39
ST41
STB-1
STB-2
STB-4
STB-567
STB-568
STB-569
AP2361
Part*
.704
.775
1.500
2.000
1.900
2.60 max
.700
1.400
2.100
2.800
3.450
1.400
2.100
2.800
3.600
.560
.640
.640
.600
.830
1.650
2.500
3.300
.650
1.300
2.600
1.460
2.200
2.870
1.35
.023
.039
.075
.100
.095
.135
.035
.070
.105
.140
.173
.070
.105
.140
.180
.028
.032
.032
.030
.042
.083
.125
.165
.033*
.065
.130
.146*
.110
.144
.068
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
1
50
30
20
100
100
5
5
5
5
5
10
10
10
10
1
1
1
1
100
100
100
100
10
10
10
10
10
10
10
Forward Voltage
2.5
5.0
10.0
.020
.022
.023
10
20
30
40
50
10
15
20
25
.023
.023
.023
.023
.023
.033
.050
.066
.082
60
45
15
30
45
6
.031
.033
—
Minimum Breakdown Voltage
B @5ua, Volts
v
Max!num Reverse Current
@25*C(NA)
®150"C(UA)
® VOLTS
1N4156
1N4157
1N4453
1N5179
1N4829
1N4830
MPD200
MPD300
MPD400
30
30
30
30
30@100MA
30@100uA
30
60
90
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Forward Voltage, V,, Volts
50
50
50
50
100
100
30
30
30
50
50
50
50
25@100X
25@100"C
20
20
20
20
20
20
30
30
30
IF
MA
TABLE 1
MIN. MAX.
LABIA 2
MIN. MAX.
TABLES
MIN. MAX.
TABLE 4
MIN. MAX.
TABLE 5
MIN. MAX.
TABLE 6
MIN. MAX.
TABLE 7
MIN. MAX.
TABLE 8
MIN. MAX.
TABLE 9
MIN. MAX.
0.010
0.100
1.0
10
100**
0.74-1.09
0.97-1.22
1.21-1.41
1.38-1.58
1.54-1.84
1.19-1.54
1.52-1.77
1.85-2.05
2.12-2.32
2.36 - 2.66
.430 - .550
.510-.630
.600 - 710
.690 - .800
.800 - .920
1.40-2.10
1.80-2.50
2.20 - 2.80
2.60 - 3.20
3.00 - 3.70
0.84-1.25
0.99-1.44
1.16-1.61
1.35-1.87
1.35-1.80
1.63-2.08
1.90-2.35
2.15-2.69
0.90-1.00
1.05-1.16
1.22-1.34
1.39-1.54
1.60-1.76
1.40-1.54
1.62-1.78
1.84-2.03
2.10-2.33
2.40 - 2.65
1.82 - 2.01
2.14-2.36
2.47-2.71
2.80 - 3.07
3.16-3.49
DO-35
.019-.021
(.483 - .533)
Diameter
.060 - .075
(1.524-1.905)
Diameter
•10%
* * Pulsed measurement. Pulse width < 800nsec, Duty cycle < 2%
1
1
>i—
.140-.180
/O CCD
A
C"70\
t
<
(25.40)
Minimum
t
•
(25.40)
SEMICONDUCTORS
4fe
CALL US AT 617-592-6090
OR FAX US AT 617-592-0677
29
• 73713S ODDDllLi T71
Operating temperature -65°C to +150"C
5% standard tolerance; Special tolerances available upon request
IPN= 0737135 0000117 908
