VISHAY
1N4245 to 1N4249
Vishay Semiconductors
Sinterglass Medium-Switching Junction Rectifier
Features
• High temperature metallurgically bonded con-
structed rectifiers
• 1.0 ampere operation at T
amb
= 55 °C with no ther-
mal runaway
• Typical I
R
less than 0.1 µA
• Hermetically sealed package
• Capable of meeting environmental standards of
MIL-S-19500
• High temperature soldering guaranteed: 350 °C/
10 seconds, 0.375 " (9.5 mm) lead length, 5 lbs.
(2.3 kg) tension
17031
Mechanical Data
Case:
JEDEC DO-204AP Solid glass body
Terminals:
Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
560 mg
Parts Table
Part
1N4245
1N4246
1N4247
1N4248
1N4249
Type differentiation
V
RRM
= 200 V
V
RRM
= 400 V
V
RRM
= 600 V
V
RRM
= 800 V
V
RRM
= 1000 V
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Test condition
Sub type
1N4245
1N4246
1N4247
1N4248
1N4249
Maximum RMS voltage
1N4245
1N4246
1N4247
1N4248
1N4249
Maximum DC blocking voltage
1N4245
1N4246
1N4247
1N4248
1N4249
Maximum average forward rectified current
Peak forward surge current
0.375 " (9.5 mm) lead length at T
amb
= 55 °C
8.3 ms single half sine-wave superimposed on
rated load (JEDEC Method)
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
RRM
V
RMS
V
RMS
V
RMS
V
RMS
V
RMS
V
DC
V
DC
V
DC
V
DC
V
DC
I
F(AV)
I
FSM
Value
200
400
600
800
1000
140
280
420
560
700
200
400
600
800
1000
1.0
50
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
1
1N4245 to 1N4249
Vishay Semiconductors
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
1)
Operating junction temperature
range
Storage temperature range
Maximum full load reverse current full cycle average 0.375 " (9.5 mm)
lead length at T
amb
= 55 °C
1)
VISHAY
Test condition
Sub type
Symbol
R
θJA
T
J
T
STG
I
R(AV)
Value
55
- 65 to + 175
- 65 to + 200
50
Unit
°C/W
°C
°C
µA
Thermal resistance from junction to ambient and from junction to lead at 0.375 " (9.5mm) lead length, with both leads mounted between
heat sinks.
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous forward
voltage
Maximum DC reverse current
I
F
= 1.0 A
at rated DC blocking voltage T
amb
= 25 °C
at rated DC blocking voltage T
amb
= 125 °C
Typical junction capacitance
V
R
= 4 V, f = 1 MHz
Test condition
Sub type
Symbol
V
F
I
R
I
R
C
J
15
Min
Typ.
Max
1.2
1.5
25
Unit
V
µA
µA
pF
Typical Characteristics
(T
amb
= 25°C unless otherwise specified)
Peak Forward Rectified Surge Current (A)
1.0
50
Average Forward Rectified Current (A)
60H
Z
Resistive or
Inductive Load
0.8
40
T
J
= T
Jmax
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.6
30
0.4
20
0.2
0.375" (9.5mm)
Lead Length
0
0
25
50
75
100
125
150
175
10
0
1
1
0
100
g1n4245_01
Ambient Temperature (°C)
g1n4245_02
Number of Cycles at 60H
Z
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
2
VISHAY
1N4245 to 1N4249
Vishay Semiconductors
Instantaneous Forward Rectified Current (A)
10
T
J
= 150°C
1
Pulse Width = 300µs
1% Duty Cycle
T
J
= 25°C
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
g1n4245_03
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
10
Instantaneous Reverse Current (µA)
T
J
= 150°C
1
T
J
= 100°C
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
g1n4245_04
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
30
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
Junction Capacitance (pF)
1
1
g1n4245_05
1
0
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
3
1N4245 to 1N4249
Vishay Semiconductors
Package Dimensions in mm
VISHAY
0.034 (0.86)
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
0.240 (6.1)
MAX.
0.150 (3.8)
0.100 (2.5)
DIA.
1.0 (25.4)
MIN.
17030
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
4
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1N4245 to 1N4249
Vishay Semiconductors
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 86094
Rev. 1, 12-Nov-02
www.vishay.com
5
