1N4728A to 1N4764A
www.vishay.com
Vishay Semiconductors
Zener Diodes
FEATURES
• Silicon planar power Zener diodes
• For use in stabilizing and clipping circuits with
high power rating
• Standard Zener voltage tolerance is ± 5 %
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
3.3 to 100
2.5 to 76
Thermal equilibrium
Single
UNIT
V
mA
• Voltage stabilization
ORDERING INFORMATION
DEVICE NAME
1N4728A to 1N4764A
1N4728A to 1N4764A
ORDERING CODE
1N4728A to 1N4764A -series-TR
1N4728A to 1N4764A-series-TAP
TAPED UNITS PER REEL
5000 per 13" reel
5000 per ammopack
(52 mm tape)
MINIMUM ORDER
QUANTITY
25 000/box
25 000/box
PACKAGE
PACKAGE NAME
DO-41
WEIGHT
310 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Zener current
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Forward voltage (max.)
I
F
= 200 mA
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
TEST CONDITION
Valid provided that leads at a distance of 4 mm
from case are kept at ambient temperature
SYMBOL
P
tot
I
Z
R
thJA
T
j
T
stg
V
F
VALUE
1300
P
V
/V
Z
110
175
-65 to +175
1.2
UNIT
mW
mA
K/W
°C
°C
V
Rev. 2.4. 02-Jun-14
Document Number: 85816
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4728A to 1N4764A
www.vishay.com
Vishay Semiconductors
DYNAMIC
RESISTANCE
f = 1 kHz
Z
ZT
at I
ZT1
Z
ZK
at I
ZT2
V
TYP.
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
MAX.
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART
NUMBER
V
Z
at I
ZT1
V
NOM.
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7
6.5
6
5.5
5
4.5
4
3.7
3.3
3
2.8
2.5
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
TEST
CURRENT
I
ZT1
mA
I
ZT2
mA
μA
MAX.
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
REVERSE LEAKAGE
CURRENT
I
R
at V
R
SURGE
CURRENT
(3)
I
R
mA
REGULATOR
CURRENT
(2)
I
ZM
mA
MAX.
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
Notes
(1)
Based on DC measurement at thermal equilibrium while maintaining the lead temperature (T ) at 30 °C + 1 °C, 9.5 mm (3/8") from the
L
diode body
(2)
Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature
(3)
t = 10 ms.
p
Rev. 2.4. 02-Jun-14
Document Number: 85816
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N4728A to 1N4764A
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
1400
Vishay Semiconductors
P
tot
- Power Dissipation (mW)
1200
1000
800
600
400
200
0
0
50
100
150
200
T
amb
- Ambient Temperature (°C)
Fig. 1 -
Admissible Power Dissipation vs. Ambient Temperature
P
tot
= f (T
amb
)
PACKAGE DIMENSIONS
in millimeters (inches):
DO-41_1N47xx
Cathode Identification
Ø 0.86 max. [0.034]
Ø 0.7 min. [0.027]
Ø 2.6 max. [0.102]
26 min. [1.024]
4.1 max. [0.161]
3.3 min. [0.128]
26 min. [1.024]
Document no.
S8-V-3901.04-001(4)
Rev. 1 - Date: 30. Nov. 2011
22624
Rev. 2.4. 02-Jun-14
Document Number: 85816
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Ø 2.1 min. [0.081]
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www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000