1N4740A - 1M200Z
Taiwan Semiconductor
1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode
FEATURES
●
●
●
●
●
●
Glass passivated chip junction
Low profile package
Built-in strain relief
Low inductance
Typical IR less than 5μA above 11V
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
V
Z
Test current I
ZT
P
tot
T
J MAX
Package
Configuration
VALUE
10 - 200
1.2 - 25
1
150
UNIT
V
mA
W
°C
DO-204AL (DO-41)
Single Die
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
On-board DC/DC converter
MECHANICAL DATA
●
●
●
●
Case: DO-204AL (DO-41)
Molding compound meets UL 94 V-0 flammability rating
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound
(halogen-free)
● Terminal: Pure tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Weight: 0.3g (approximately)
DO-204AL (DO-41)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Power dissipation at TA=50°C
Derate above 50°C (Note 1)
Operating junction temperature range
Storage temperature range
Note:
1. Mounted on Cu-Pad size 5mm x 5mm
SYMBOL
P
tot
T
J
T
STG
VALUE
1.00
6.67
-55 to +150
-55 to +150
UNIT
Watts
mW/°C
°C
°C
1
Version:N1706
1N4740A - 1M200Z
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PARTNO.
SUFFIX
PACKING
CODE
A0
1N47xxA
1MxxxZ
(Note 1)
R0
H
R1
B0
Notes :
1. "xx" defines voltage from 10V (1N4740A) to 200V (1M200Z)
G
DO-41
DO-41
PACKING CODE
SUFFIX
PACKAGE
DO-41
DO-41
PACKING
3,000 / Ammo box
(52mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel
(Reverse)
1,000 / Bulk packing
EXAMPLE
EXAMPLE P/N
1N4740AHA0G
PART NO.
1N4740A
PART NO.
SUFFIX
H
PACKING
CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
2
Version:N1706
1N4740A - 1M200Z
Taiwan Semiconductor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted)
Zener voltage
V
Z
@ I
ZT
Test
current
I
ZT
mA
Zener Impedance
Leakage
current
Surge
current
Z
ZT
@I
ZT
Ω
Device
(Note 1)
Min.
Z
ZK
@I
ZK
Ω
mA
I
R
@V
R
μA
Max.
I
R
V
mA
V
Nom.
(Note 2)
(Note 3)
Max.
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
1M110Z
1M120Z
1M130Z
1M150Z
1M160Z
1M180Z
1M200Z
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
104.50
114.00
123.50
142.50
152.00
171.00
190.00
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
115.50
126.00
136.50
157.50
168.00
189.00
210.00
25.0
23.0
21.0
19.0
17.0
15.5
14.0
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
2.3
2.0
1.9
1.7
1.6
1.4
1.2
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
450
550
700
1000
1100
1200
1500
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
-
-
-
-
-
-
-
3
Version:N1706
1N4740A - 1M200Z
Taiwan Semiconductor
Notes :
1. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal
zener voltage of ±5%
2. Specials Available Include:
A.
Nominal zener voltages between the voltages shown and tighter voltage tolerances
B.
Matched sets
3.
Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 90 seconds while
maintaining the lead temperature(TL) at 30°C±1°C, from the diode body
4.
Zener Impedance (Zz) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results
when an accurrent having and rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed
on IZT or IZK.
5.
Surge Current (IR) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-
repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration
superimposed on the test current, IZT per JEDEC registration; however, actual device capability is as
described in Figure 11.
4
Version:N1706
1N4740A - 1M200Z
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Power Temperature Derating Curve
1.25
Fig.2 Typical Forward Characteristics
1000
MINIMUM
MAXIMUM
IF, FORWARD CURRENT (mA)
P
D
, MAXIMUM POWER DISSIPATION (WATTS)
1
100
0.75
70
°
C
0.5
10
150
°
C
25
°
C
0
°
C
0.25
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE (
o
C)
1
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
F
, FORWARD VOLTAGE (V)
Fig.3 Effect Of Zener Current On Zener impedance
1000
Iz(rms)=0.1 Iz(dc)
f=1KHz
Zz, DYNAMIC IMPEDANCE (Ω)
Zz, DYNAMIC IMPEDANCE (Ω)
Fig.4 Effect Of Zener
Voltage On Zener Impedance
1000
Iz = 1mA
Iz(rms)=0.1 Iz(dc)
f=1KHz
100
47V
27V
100
5 mA
20mA
10
0.8V
10
1
0
1
10
100
Iz, ZENER CURRENT (mA)
1
1
10
Iz, ZENER CURRENT(mA)
100
5
Version:N1706
