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1N4934G

1 A, 100 V, SILICON, SIGNAL DIODE, DO-41

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compli
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
元件数量
1
最高工作温度
175 °C
最大输出电流
1 A
最大重复峰值反向电压
100 V
最大反向恢复时间
0.2 µs
表面贴装
NO
文档预览
1N4933G - 1N4937G
PRV : 50 - 600 Volts
Io : 1.0 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 50
°C
Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I
F
= 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
1.0
400
280
400
600
420
600
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
Trr
30
1.2
5.0
100
150
15
- 65 to + 150
- 65 to + 150
A
V
µA
µA
ns
pf
°C
°C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
C
J
T
J
T
STG
Notes :
( 1 ) Reverse Recovery Test Conditions : I
F
= 0.5 A, I
R
= 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
DC
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( 1N4933G - 1N4937G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5
D.U.T.
50 Vdc
(approx.)
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25
Trr
+
- 1.0 A
SET TIME BASE FOR 50-100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
30
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3 ms SINGLE HALF SINE WAVE
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
0.8
PEAK FORWARD SURGE
CURRENT, AMPERES
24
Ta = 50
°C
0.6
18
0.4
12
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
175
6
0
1
2
4
6
10
20
40
60 100
AMBIENT TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FORWARD CURRENT, AMPERES
20
10
Pulse Width = 300
µs
2% Duty Cycle
T
J
= 25
°C
1.0
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
10
T
J
= 100
°C
1.0
0.1
0.1
T
J
= 25
°C
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 24, 2005
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参数对比
与1N4934G相近的元器件有:1N4935G、1N4937G、1N4933G、1N4936G。描述及对比如下:
型号 1N4934G 1N4935G 1N4937G 1N4933G 1N4936G
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SIGNAL DIODE SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
是否无铅 不含铅 - 不含铅 不含铅 -
是否Rohs认证 符合 - 符合 符合 -
厂商名称 EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] -
Reach Compliance Code compli - compli compli -
配置 SINGLE - SINGLE SINGLE -
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE -
最大正向电压 (VF) 1.2 V - 1.2 V 1.2 V -
元件数量 1 - 1 1 -
最高工作温度 175 °C - 175 °C 175 °C -
最大输出电流 1 A - 1 A 1 A -
最大重复峰值反向电压 100 V - 600 V 50 V -
最大反向恢复时间 0.2 µs - 0.2 µs 0.2 µs -
表面贴装 NO - NO NO -
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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