1N5221B-1N5281B
Technical Data
Data Sheet N0184, Rev. D
1N52-Series Zener Diode
Features
Low Reverse Leakage
Low Zener Impedance
Power Dissipation of 500mW
High Stability and High Reliability
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DO-35
Circuit Diagram
Mechanical Data
Case: DO-35 Glass Case
Polarity: Color band denotes cathode end
Mounting Position: Any
Maximum Ratings
@T
A
=25°C unless otherwise specified
Parameter
Power Dissipation
(Note 1)
Forward Voltage
@ I
F
= 200mA
Symbol
P
D
V
F
R
θJA
T
J
,T
STG
Value
500
1.1
0.3
-65 to 200
Units
mW
V
K/mW
°C
Typical Thermal resistance junction to Ambient Air
(Note 1)
Operating Junction and Storage
Temperature Range
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
Ordering Information
Device
1N5221B-1N5281B
Marking Diagram
Shipping
2500pcs / tape
Package
DO-35
(Pb-Free)
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
1N5252B
= Part Name
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1N5221B-1N5281B
Technical Data
Data Sheet N0184, Rev. D
Electrical Characteristic
s @T
A
=25°C unless otherwise specified
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1N5221B-1N5281B
Technical Data
Data Sheet N0184, Rev. D
Ratings and Characteristics Curves
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1N5221B-1N5281B
Technical Data
Data Sheet N0184, Rev. D
Mechanical Dimensions DO-35(Inches/Millimeters)
Carrier Tape Specification DO-35
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1N5221B-1N5281B
Technical Data
Data Sheet N0184, Rev. D
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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