To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
1N5223B through 1N5258B
Silicon Epitaxial Planar Zener Diodes for Voltage Regulation
ADE-208-137B (Z)
Rev.2
Dec. 2001
Features
•
Glass package DO-35 structure ensures high reliability.
•
Wide spectrum from 2.7 V through 36 V of zener voltage provide flexible application.
Ordering Information
Type No.
1N5223B through
1N5258B
Cathode band
Black
Mark
Type No.
Package Code
DO-35
Pin Arrangement
1
Type No.
Cathode band
2
1. Cathode
2. Anode
1N5223B through 1N5258B
Absolute Maximum Ratings
(Ta = 25°C)
Item
Power dissipation
Surge power dissipation
Lead temperature
Junction temperature
Storage temperature
Symbol
Pd
Pd(surge)
*
T
L
*
Tj
*
2
3
1
Value
500
10
230
200
–65 to +200
Unit
mW
W
°C
°C
°C
Tstg
Notes: 1. Non-recurrent square wave, pw = 8.3 ms, Tj = 55°C, Tj is prior to surge.
2. Less than 1/16" from the case for 10 seconds.
3. By standard printed board, see fig 2.
Electrical Characteristics
(Ta = 25°C)
V
Z
(V)
Test
Condition
I
R
(µA)
µ
Test
Condition
Z
ZT
(Ω)
Ω
Test
Condition
Z
ZK
(Ω)
Ω
Test
Condition
γ
Z
(%/°C)
*
V
F
*
(V)
%°
1
2
I
Z
(mA)
1N5223B 2.7 ± 5 (%) 20
1N5224B 2.8 ± 5 (%) 20
1N5225B 3.0 ± 5 (%) 20
1N5226B 3.3 ± 5 (%) 20
1N5227B 3.6 ± 5 (%) 20
1N5228B 3.9 ± 5 (%) 20
1N5229B 4.3 ± 5 (%) 20
1N5230B 4.7 ± 5 (%) 20
1N5231B 5.1 ± 5 (%) 20
1N5232B 5.6 ± 5 (%) 20
1N5233B 6.0 ± 5 (%) 20
1N5234B 6.2 ± 5 (%) 20
1N5235B 6.8 ± 5 (%) 20
1N5236B 7.5 ± 5 (%) 20
1N5237B 8.2 ± 5 (%) 20
1N5238B 8.7 ± 5 (%) 20
Max
75
75
50
25
15
10
5
5
5
5
5
5
3
3
3
3
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
Max
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
I
ZT
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
Max
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
I
ZK
(mA) Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
-0.08
-0.08
-0.075
-0.07
-0.065
-0.06
±0.055
±0.03
±0.03
+0.038
+0.038
+0.045
+0.05
+0.058
+0.062
+0.065
Max
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
Notes: 1. 1N5223 to 1N5242: I
Z
= 7.5 mA, 1N5243 to 1N5258: I
Z
= I
Z,
, Ta = 25°C to 125°C
2. Tested with DC, I
F
= 200 mA
Rev.2, Dec. 2001, page 2 of 7
1N5223B through 1N5258B
Electrical Characteristics
(cont)
(Ta = 25°C)
V
Z
(V)
Test
Condition
I
R
(µA)
µ
Test
Condition
Z
ZT
(Ω)
Ω
Test
Condition
Z
ZK
(Ω)
Ω
Test
Condition
γ
Z
(%/°C)
*
V
F
*
(V)
%°
1
2
I
Z
(mA)
1N5239B 9.1 ± 5 (%) 20
1N5240B 10 ± 5 (%)
1N5241B 11 ± 5 (%)
1N5242B 12 ± 5 (%)
1N5243B 13 ± 5 (%)
1N5244B 14 ± 5 (%)
1N5245B 15 ± 5 (%)
1N5246B 16 ± 5 (%)
1N5247B 17 ± 5 (%)
1N5248B 18 ± 5 (%)
1N5249B 19 ± 5 (%)
1N5250B 20 ± 5 (%)
1N5251B 22 ± 5 (%)
1N5252B 24 ± 5 (%)
1N5253B 25 ± 5 (%)
1N5254B 27 ± 5 (%)
1N5255B 28 ± 5 (%)
1N5256B 30 ± 5 (%)
1N5257B 33 ± 5 (%)
1N5258B 36 ± 5 (%)
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
Max
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
(V)
7.5
8.0
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
Max
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
I
ZT
(mA)
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
Max
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
I
ZK
(mA) Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
+0.068
+0.075
+0.076
+0.077
+0.079
+0.082
+0.082
+0.083
+0.084
+0.085
+0.086
+0.086
+0.087
+0.088
+0.089
+0.090
+0.091
+0.091
+0.092
+0.093
Max
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
Notes: 1. 1N5223 to 1N5242: I
Z
= 7.5 mA, 1N5243 to 1N5258: I
Z
= I
Z,
, Ta = 25°C to 125°C
2. Tested with DC, I
F
= 200 mA
Rev.2,Dec. 2001, page 3 of 7
