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1N5349

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器件类别:分立半导体    稳压二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
DO-27
Pd(W)
5
VZ(Nom)
12
IZT(mA)
100
IR(uA)
2.0
VR(V)
8.6
class
Diodes
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1N5333B-1N5388B
Zener Diode
POWER DISSIPATION: 5.0 W
Features
Silicon planar power zener diodes
For use in stabilizing and clipping curcuits with high
power rating.
Standard zener voltage tolerance is ±10%. Add
suffix "B" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
DO-201AD
Mechanical Data
Case:DO-201AD
Polarity: cathode Band
Marking: type number
Approx. weight:
0.032 ounces, 0.9 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
Zener current (see Table "Characteristics")
DC pow er dissipation @ T
L
=75, measure at zero lead length (Fig.1)
derate above 75 (NOTE 1)
Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated
load (JEDEC Method)(NOTE 1,2)
Junction temperature
VALUE
UNIT
P
D
I
FSM
T
J
T
s
5.0
40.0
see fig.5
-55---+150
-55---+150
W
mW
A
Storage temperature range
NOTES:
(1) Mounted on 8.0mm
2
copper pads to each terminal.
(2) 8.3ms single half sine-wav e, or equiv alent square wav e, duty cy cle=4 pulses per minute maximum.
Revision:20170701-P1
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1N5333B-1N5388B
Zener Diode
ELECTRICAL CHARACTERISTICS
Type
(Note 1)
Zener voltage
(Note 2)
V
Z
@I
ZT
V
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
(T
A
=25℃)
Max Reverse Leakage
Current
I
R
µA
300
150
50
10
5.0
1.0
1.0
1.0
1.0
10
10
10
10
7.5
5.0
5.0
2.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Maximum Zener
Impedance
(Note 2)
Z
ZT
@I
ZT
3.0
2.5
2.0
2.0
2.0
1.5
1.0
1.0
1.0
1.0
1.5
1.5
2.0
2.0
2.0
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
3.0
3.0
3.5
3.5
4.0
5.0
6.0
8.0
10
11
14
20
25
27
35
40
42
I
ZT
mA
380
350
320
290
260
240
220
200
200
175
175
150
150
150
125
125
100
100
100
75
75
70
65
65
65
50
50
50
50
50
40
40
30
30
30
25
25
20
20
20
Z
ZT
@I
ZK
=1µA
400
500
500
500
450
400
400
300
200
200
200
200
200
150
125
125
125
100
75
75
75
75
75
75
75
75
100
110
120
130
140
150
160
170
190
210
230
280
350
400
V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.0
5.2
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.9
10.6
11.5
12.2
12.9
13.7
14.4
15.2
16.7
18.2
19.0
20.6
21.2
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
45.5
47.1
I
ZM
I
R
V
Z
(Note 3) (Note 4) (Note 5)
A
V
mA
20
18.7
17.6
16.4
15.3
14.4
13.4
12.7
12.4
11.5
10.7
10.0
9.5
9.2
8.6
8.0
7.5
7.0
6.7
6.3
6.0
5.8
5.5
5.3
5.1
4.7
4.4
4.3
4.1
3.9
3.7
3.5
3.5
3.1
2.8
2.7
2.5
2.3
2.2
2.1
0.85
0.80
0.54
0.49
0.44
0.39
0.25
0.19
0.10
0.15
0.15
0.20
0.20
0.22
0.22
0.25
0.25
0.25
0.25
0.25
0.30
0.35
0.40
0.40
0.40
0.45
0.55
0.55
0.60
0.60
0.60
0.60
0.65
0.65
0.70
0.80
0.90
1.00
1.20
1.35
1440
1320
1220
1100
1010
930
865
790
765
700
630
580
545
520
475
430
395
365
340
315
295
280
264
250
237
216
198
190
176
170
158
144
132
122
110
100
93
86
79
76
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
Revision:20170701-P1
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www.lgesem i
.c
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mail:lge@lgesemi.com
1N5333B-1N5388B
Zener Diode
ELECTRICAL CHARACTERISTICS
Type
(Note 1)
Zener voltage
(Note 2)
V
Z
@I
ZT
V
68
75
82
87
91
100
110
120
130
140
150
160
170
180
190
200
(T
A
=25℃)
Max Reverse Leakage
Current
I
R
µA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
Maximum Zener
Impedance
(Note 2)
Z
ZT
@I
ZT
44
45
65
75
75
90
125
170
190
230
330
350
380
430
450
480
I
ZT
mA
20
20
15
15
15
12
12
10
10
8.0
8.0
8.0
8.0
5.0
5.0
5.0
Z
ZT
@I
ZK
=1µA
500
620
720
760
760
800
1000
1150
1250
1500
1500
1650
1750
1750
1850
1850
V
R
V
51.7
56.0
62.2
66.0
69.2
76.0
83.6
91.2
98.8
106
114
122
129
137
144
152
I
ZM
I
R
V
Z
(Note 3) (Note 4) (Note 5)
A
V
mA
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.2
1.1
1.1
1.0
1.0
0.9
0.9
1.5
1.6
1.8
2.0
2.2
2.5
2.5
2.5
2.5
2.5
3.0
3.0
3.0
4.0
5.0
5.0
70
63
58
54.5
52.5
47.5
43.0
39.5
36.6
34.0
31.6
29.4
28.0
26.4
25.0
23.6
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
NOTE:
1.TOLERANCE AND VOLTAGE DESIGNATION-The JEDEC type numbers shown indicate a tolerance of ±10% with guaranteed limits on only Vz, I
R
, Ir, and
V
F
as shown in the electrical characteristics table. Units with guaranteed limits on all seven parameters are indicated by suffix "B" for ±5% tolerance.
2.ZENER VOLTAGE (Vz) AND IMPEDANCE (Z
ZT
& Z
ZK
) - Test conditions for zener voltage and impedance are as follows;Iz is applied 40±10ms prior to
reading. Mounting contacts are located from the inside edge of mounting clips to the body of the diode.
3.SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3ms.
The data given in Fig 5. May be used to find the maximum surge current for a quare wave of any pulse width between 1 ms by plotting the applicable
points on logarithmic paper. Examples of this, using the 6.8v and 200v zeners, are shown in Fig 6. Mounting contact located as specified in NOTE 3.
4.VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are the made at 10% and then at 50% of the Iz max
value listed in the electrical characteristics table. The test currents are the same for the 5% and 10% tolerance devices. The test current time druation for
each Vz measurement is 40±10ms.Mounting contact located as specified in NOTE 2.
5.MAXIMUM REGULATOR CURRENT (I
ZM
) - The maximum current shown is based on the maximum voltage of a 5% type unit. Therefore, it applies only to
the B-suffix device. The actual I
ZM
for any device may not exceed the value of 5 watts divided by the actual Vzof the device. T=75℃ at 3/8" maximum from
L
the device body.
Revision:20170701-P1
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1N5333B-1N5388B
Zener Diode
Ratings And Characteristic Curves
FIG.1 --FORWARD DERATING CURVE
θVz
TEMPERATURE COEFFICIENT
(mv)C @I
ZT
J
AVERAGE FORWARD CURRENT
FIG.2 -- TEMPERATURE COEFFICIENT RANGE
8
300
200
100
50
20
10
6
L-LEAD LENGTH
TO HEAT SINK
RANGE
AMPERES
4
2
5
0
20
40
60
80
100
120
140 160 180
200 220
240
0
0
20
40
60
80
100 120
140
160 180
200
AMBIENT TEMPERATURE,
ΘJL.JUNCTION-TO-LEAD
THERMAL RESISTA
FIG.3 -- TYPICAL THERMAL RESISTANCE
PEAK FORWARD SURGE CURRENT
Vz,ZENER VOLTACE @I
ZT
(VOLTS)
FIG.4 -- MAXIMUM NON-REPETITIVE SURGE CURRENT
40
/W)
40
20
RESISTANCE
AMPERES
30
10
4
2
1
.4
.2
.1
2
4
5
8
10
20
30
40
60
80
100
200
20
10
0
0
.2
.4
.6
.8
1
L/LEAD LENGTH TO HEAT SINK(INCH)
NUMBER OF CYCLES AT 60 Hz
FIG.5 -- TYPICAL THERMAL RESPONSE
ΘJl(1.D)TRANSIENT
THERMAL RESISTANCE
/W
JUNCTION-TO-LEAD
20
10
D=0.5
5
D=0.2
D=0.1
2
D=0.05
1
D=0.01
.5
D=0
.2
.001
.005
.01
.05
.1
.5
TIME SECONDS
1
5
10
20
50 100
Revision:20170701-P1
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1N5333B-1N5388B
Zener Diode
Ratings And Characteristic Curves
FIG.6 -- PEAK SURGE CURRENT VERSUS PULSE WIDTH
FIG.7 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=6.8 THRU 10 VOLTS
I
r.PEAK SURGE CURRENT(AMPS)
30
VZ=6.8V
10
5
2
1
.5
.2
.1
Iz,ZENER CURRENT(mA)
20
1000
100
10
1
.1
T=25℃
Tc=25℃
VZ=200V
1
10
100
1000
1
2
3
4
5
6
7
8
9
10
PW,PULSE WIDTH(ms)
FIG.8 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=11 THRU 75 VOLTS
Vz,ZENER VOLTAGE(VOLTS)
FIG.9 -- ZENER VOLTAGE VERSUS ZENER CURRENT
Vz=82 THRU 200 VOLTS
Iz,ZENER CURRENT(mA)
1000
T=25
Iz,ZENER CURRENT(mA)
1000
100
100
10
10
1
1
.1
.1
80
100
120
140
160
180
200
220
10
20
30
40
50
60
70
80
Vz,ZENER VOLTAGE(VOLTS)
PACKAGE
DO-27
SPQ/PCS
1250/AMMO
CARTON
SPQ/PCS
12500
CARTON
SIZE/CM
40X26.5X30
Vz,ZENER VOLTAGE(VOLTS)
CARTON
GW/KG
14.00
CARTON
NW/KG
12.00
Revision:20170701-P1
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