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1N5391-G

1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15

器件类别:分立半导体    二极管   

厂商名称:Comchip Technology

厂商官网:http://www.comchiptech.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Comchip Technology
Reach Compliance Code
compli
配置
SINGLE
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
最大非重复峰值正向电流
30 A
元件数量
1
最高工作温度
150 °C
最大输出电流
1.5 A
最大重复峰值反向电压
50 V
表面贴装
NO
技术
SCHOTTKY
文档预览
Axial Silastic Guard Junction Standard Rectifier
1N5391-G Thru. 1N5399-G
Voltage: 50 to 1000 Volts
Forward Current: 1.5 Amps
RoHS Device
Features
-Low cost construction.
-Low forward voltage drop.
-Low reverse leakage.
-High forward surge current capability.
-High temperature soldering guarantee: 260°C/10
seconds, 0.375" (9.5mm) lead length at 5lbs
(2.3kg) tension.
1.0(25.4)
MIN.
0.034(0.9)
0.028(0.7)
DIA.
DO-15
0.300(7.6)
0.230(5.8)
Mechanical Data
-Case: transfer-molded plastic.
-Epoxy: UL94V-0 rate flame retardant.
-Lead: Plated axial lead, solderable per MIL-STD-
202E, method 208C.
-Polarity: Cathode indicated by polarity band.
-Mounting position: Any.
-Weight: 0.012 ounce, 0.33grams.
Dimensions in inches and (millimeters)
1.0(25.4)
MIN.
0.140(3.6)
0.104(2.6)
DIA.
Maximum Ratings
unless otherwise specified.
Characteristics
and Electrical
Ratings at 25°C ambient temperature
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
Parameter
Max.repetitive peak reverse voltage
Max.RMS voltage
Max.DC blocking voltage
Max. average forward rectified
current , 0.375"(9.5mm) lead length at
T
A
=75
O
C
Peak forward surge current, 8.3mS
single half sine wave superimpose on
rated load (JEDEC method)
Max. instantaneous forward voltage
at I
F
=1.0A
Max. DC reverse current at T
A
=25
rated DC blocking voltage T
A
=100
Max. full load reverse current, full
cycle average 0.375"(9.5mm) lead
length at T
L
=75
O
C
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
O
O
Symbol
1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398
-G
-G
-G
-G
-G
-G
-G
-G
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
300
210
300
400
280
400
1.5
500
350
500
600
420
600
800
560
800
1N5399
-G
1000
700
1000
Unit
V
V
V
A
I
FSM
30
A
V
F
C
C
I
R
1.1
5.0
50
30
13
50
-55 to +150
-55 to +150
O
V
μA
I
R(AV)
C
J
R
θJA
T
J
T
STG
μA
pF
C/W
O
C
C
O
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C. board mounted with 0.2"×0.2" (5.0×
5.0mm) copper pads.
REV:A
QW-BB021
Page 1
Comchip Technology CO., LTD.
Axial Silastic Guard Junction Standard Rectifier
Rating and Characteristic Curves (1N5391-G Thru. 1N5399-G)
Fig.1 Typical Forward Current
Derating Curve
1.8
60
Fig.2 Max. Non-Repetitive Peak
Forward Surge Current
Ι
FSM
, Peak Forward Surge Current (A)
8.3mS, single half
sine-wave, JEDEC
method.
T
J
=T
Jmax
I
(AV)
, Average Forward Current (A)
1.5
Single phase, half
wave, 60Hz,
Resistive or
inductive load
50
1.2
40
0.9
30
0.6
20
0.3
10
0
0
25
50
75
100
125
150
175
0
1
10
100
T
A
, Ambient Temperature (°C)
Number of Cycles at 60Hz
Fig.3 Typical Instantaneous Forward
Characteristics
10
10
Fig.4 Typical Reverse Characteristics
I
R
, Instantaneous Reverse Current (mA)
I
F
, Instantaneous Forward Current (A)
T
J
=100
O
C
1
1
T
J
=25 C
O
0.1
Pulse width=300μs.
1% duty cycle
T
J
=25
O
C
0.1
0.01
0.6
0.01
0
20
40
60
80
100
120
140
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
F
, Instantaneous Forward Voltage (V)
Percent of Peak Reverse Voltage (%)
Fig.5 Typical Junction Capacitance
1000
f=1MHz
T
J
=25
O
C
C
J
, Capacitance (pF)
100
10
0.1
1
10
100
V
R
, Reverse Voltage (V)
REV:A
QW-BB021
Page 2
Comchip Technology CO., LTD.
查看更多>
参数对比
与1N5391-G相近的元器件有:1N5396-G、1N5397-G、1N5398-G、1N5399-G、1N5392-G、1N5393-G、1N5394-G、1N5395-G。描述及对比如下:
型号 1N5391-G 1N5396-G 1N5397-G 1N5398-G 1N5399-G 1N5392-G 1N5393-G 1N5394-G 1N5395-G
描述 1.5 A, 50 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合
厂商名称 Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Reach Compliance Code compli compli compli compli compli compli compli compli compli
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V 1.1 V
最大非重复峰值正向电流 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A 30 A
元件数量 1 1 1 1 1 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
最大重复峰值反向电压 50 V 500 V 600 V 800 V 1000 V 100 V 200 V 300 V 400 V
表面贴装 NO NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
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