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1N5398S-G

Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Sangdest Microelectronics (Nanjing) Co Ltd

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Sangdest Microelectronics (Nanjing) Co Ltd
包装说明
O-PALF-W2
Reach Compliance Code
unknown
Is Samacsys
N
其他特性
HIGH RELIABILITY
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-15
JESD-30 代码
O-PALF-W2
湿度敏感等级
1
最大非重复峰值正向电流
50 A
元件数量
1
相数
1
端子数量
2
最大输出电流
1.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
800 V
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
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SENSITRON

SEMICONDUCTOR
Data Sheet 2579, Rev. —

Features



1N5391S –

1N5399S

1.5A SILICON RECTIFIER


Diffused Junction

Fast Switching for High Efficiency
                                                     

High Current Capability and Low Forward Voltage Drop

Low Reverse Leakage Current

Surge Overload Rating to 50 A Peak
Mechanical Data


Plastic Material – UL Flammability Classification Rating 94V-0
                                                          
DO-41
Max
                                                                



Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band
Maximum Ratings and Electrical Characteristics

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.


Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 70°C
B
B

Weight: 0.30 grams (approx.)

Mounting Position: Any

Marking: Type Number

Dim
A
B
C
D
Min
Min
Max
25.4
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
0.159 0.205
0.028 0.034
0.079 0.107
In inch
@T
A
=25°C unless otherwise specified
B
B
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
1N
5391S
50
35
1N
1N
1N
1N
1N
1N
5392S 5393S 5395S 5397S 5398S 5399S
100
70
200
140
400
280
1.5
600
420
800
560
1000
700
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 1.5A
B
B
I
FSM
V
FM
I
RM
C
j
R
θJA
T
j
T
STG
50
1.1
5.0
50
20
55
-65 to +150
-65 to +150
A
V
µA
pF
K/W
°C
°C
@T
A
= 25°C
@T
A
= 100°C
B
B
B
B
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

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SENSITRON
SEMICONDUCTOR
Data Sheet 2579, Rev. —
I
(AV)
, AVERAGE FORWARD RECTIFIED CURRENT (A)
1N5391S – 1N5399S
1.5A SILICON RECTIFIER

I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
1.5

1.0
1.0
0.5
0.1
T
j
= 25°C
0
25
50
75
100
125
150
175
T
A
AMBIENT TEMPERATURE (ºC)
Fig. 1, Forward Current Derating Curve
0.01
0.6
0.8
1.0
1.2
1.4
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
50
8.3 ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
100
T
j
= 25°C
f = 1MHz
40
30
C
j
, CAPACITANCE (pF)
10
20
10
0
1.0
10
100
1.0
1.0
10
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Peak Forward Surge Current
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement.
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from
use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
Sensitron Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations.
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
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