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1N5402-E3/60

DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DO-201AD
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
200 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-50 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT APPLICABLE
认证状态
Not Qualified
最大重复峰值反向电压
200 V
表面贴装
NO
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
Base Number Matches
1
文档预览
1N5400 thru 1N5408
Vishay General Semiconductor
General Purpose Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
3.0 A
50 V to 1000 V
200 A
5.0 µA
1.2 V
150 °C
DO-201AD
Features
Low forward voltage drop
Low leakage current
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated (E3 Suffix) leads,
solderable per J-STD-002B and JESD22-B102D
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application.
(Note: Theses devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward
rectified current 0.5" (12.5 mm)
lead length at T
L
= 105 °C
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
Maximum full load reverse
current, full cycle average 0.5"
(12.5 mm) lead length at
T
L
= 105 °C
Operating junction and storage
temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
1N5400
50
35
50
1N5401
100
70
100
1N5402
200
140
200
1N5403
300
210
300
1N5404
400
280
400
3.0
1N5405
500
350
500
1N5406
600
420
600
1N5407
800
560
800
1N5408
1000
700
1000
Unit
V
V
V
A
I
FSM
200
A
I
R(AV)
500
µA
T
J
,T
STG
- 50 to + 150
°C
Document Number 88516
25-Aug-05
www.vishay.com
1
1N5400 thru 1N5408
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Test
condition
at 3.0 A
Symbol 1N5400 1N5401
V
F
1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 Unit
1.2
V
T
A
= 25 °C
Maximum DC
reverse current T
A
= 150 °C
at rated DC
blocking voltage
Typical junction
capacitance
at 4.0 V,
1 MHz
I
R
5.0
500
µA
C
J
30
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal
resistance
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
with 0.8 x 0.8" (20 x 20 mm) copper heatsinks
(1)
Symbol
R
θJA
1N5400 1N5401 1N5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408
20
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
8.0
Instantaneous Forward Surge Current (A)
400
T
L
= 105 °C
8.3
ms Single Half Sine-Wave
1.0 Cycle
Average Forward Rectified Current (A)
L = 0.25” (6.4 mm)
7.0
6.0
5.0
4.0 L = 0.50”
(12.7 mm)
3.0
2.0
1.0
0
40
60
80
100
120
140
160
180
T
A
= Ambient Temperature
0.375” (9.5 mm) Lead Length
P.C.B. Mounting
60 Hz Resistive
or Inductive
Load
L = 0.31”
(7.9 mm)
T
L
= Lead Temp.
with
Both Leads Heat
Sink Mounted
with
Length (L) as shown
100
40
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88516
25-Aug-05
1N5400 thru 1N5408
Vishay General Semiconductor
100
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
T
J
= 25 °C
Pulse
Width
= 300
µs
1% Duty Cycle
1
Junction Capacitance (pF)
1.8
10
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
10
T
J
= 150 °C
Transient Thermal Impedance (°C/W)
100
Instantaneous Reverse Current (µA)
10
1
T
J
= 100 °C
1
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88516
25-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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