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1N5529AURTR

Zener Diode, 9.1V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLASS, MLL34, MELF-2

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
零件包装代码
DO-213AA
包装说明
R-LELF-R2
针数
2
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
45 Ω
JEDEC-95代码
DO-213AA
JESD-30 代码
R-LELF-R2
JESD-609代码
e0
元件数量
1
端子数量
2
最高工作温度
175 °C
封装主体材料
GLASS
封装形状
RECTANGULAR
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
9.1 V
表面贴装
YES
技术
AVALANCHE
端子面层
Tin/Lead (Sn/Pb)
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
10%
工作测试电流
1 mA
Base Number Matches
1
文档预览
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
DESCRIPTION
The 1N5518BUR-1 thru 1N5546BUR-1 series of 0.5 watt glass surface
mount Zener voltage regulators provides a selection from 3.3 to 33 volts in
standard 5% tolerances as well as tighter tolerances identified by different
suffix letters on the part number. These have an internal-metallurgical-bond
option as identified by the “–1” suffix. This internally bonded Zener package
construction is also in JAN, JANTX, and JANTXV military qualifications.
Microsemi also offers numerous other Zener products to meet higher and
lower power applications.
APPEARANCE
WWW .
Microsemi
.C
OM
DO-213AA
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
FEATURES
Surface mount equivalent to JEDEC registered
1N5518 thru 1N5546 series
Internal metallurgical bond with the “-1” suffix
Also available in JAN, JANTX, and JANTXV
qualifications per MIL-PRF-19500/437 by adding
the JAN, JANTX, or JANTXV prefixes to part
numbers for desired level of screening; (e.g.
JANTX1N4099UR-1, JANTXV1N4109CUR-1, etc.)
Nonbonded types also available without the “-1”
suffix for both the axial and surface mount
packages
DO-7 or DO-35 glass body axial-leaded Zener
equivalents also available per JEDEC registration
with part numbers 1N5518 thru 1N5546 on
separate data sheets
APPLICATIONS / BENEFITS
Regulates voltage over a broad operating current
and temperature range
Extensive selection from 3.3 to 33 V
Standard voltage tolerances are plus/minus 5% with
a “B” suffix, e.g. 1N5518BUR-1, etc.
Tight tolerances available in plus or minus 2% or 1%
with C or D suffix respectively, e.g. 1N5518CUR-1,
1N5518DUR-1, etc.
Hermetically sealed surface mount package
Nonsensitive to ESD per MIL-STD-750 Method 1020
Minimal capacitance (see Figure 3)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
Operating and Storage temperature: -65
º
C to
+175
º
C
Thermal Resistance: 100
º
C/W junction to end cap,
or 250
º
C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 0.5 watts at end cap
temperature T
EC
< 125
o
C or at ambient T
A
< 50
º
C
when mounted on FR4 PC board as described for
thermal resistance above (see Figure 2 for
derating)
Forward voltage @200 mA: 1.1 volts
º
Solder Temperatures: 260 C for 10 s (max)
MECHANICAL AND PACKAGING
CASE: Hermetically sealed glass DO-213AA
(SOD80 or MLL34) MELF style package
TERMINALS: End caps tin-lead plated solderable
per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band where
diode is to be operated with the banded end positive
with respect to the opposite end for Zener regulation
MARKING: cathode band only
TAPE & REEL option: Standard per EIA-481-1-A
with 12 mm tape, 2000 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.04 grams
See package dimensions on last page
1N5518BUR – 1N5546BUR
Copyright
©
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
WWW .
Microsemi
.C
OM
ELECTRICAL CHARACTERISTICS
JEDEC TYPE
NUMBER
(Note 1 and
Note 7)
NOMINAL
ZENER
VOLTAGE
TEST
CURRENT
(T
A
= 25
o
C unless otherwise noted. Based on DC measurements at
MAX. REVERSE CURRENT
(Note 4)
B-C-D
SUFFIX
MAXIMUM
DC ZENER
CURRENT
B-C-D SUFFIX
MAX. NOISE
DENSITY
AT I
Z
= 250μA
REGULATION
FACTOR
LOW V
Z
CURRENT
thermal equilibrium;
V
F
= 1.1 Max @ IF = 200 mA for all types.)
MAX. ZENER
IMPEDANCE
B-C-D SUFFIX
V
Z
@ I
ZT
(Note 2)
VOLTS
I
ZT
mAdc
20
20
20
20
10
5.0
3.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Z
ZT
@ I
ZT
(Note 3)
OHMS
26
24
22
18
22
26
30
30
30
35
40
45
60
80
90
90
100
100
100
100
100
100
100
100
100
100
100
100
100
ΔV
Z
(Note 6)
I
ZL
(Note 6)
I
R
μAdc
5.0
3.0
1.0
3.0
2.0
2.0
2.0
1.0
1.0
0.5
0.5
0.1
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
V
R
– VOLTS
NON & A-
SUFFIX
0.90
0.90
0.90
1.0
1.5
2.0
3.0
4.5
5.5
6.0
6.5
7.0
8.0
9.0
9.5
10.5
11.5
12.5
13.0
14.0
15.0
16.0
17.0
18.0
20.0
21.0
23.0
24.0
28.0
B-C-D
SUFFIX
1.0
1.0
1.0
1.5
2.0
2.5
3.5
5.0
6.2
6.8
7.5
8.2
9.1
9.9
10.8
11.7
12.6
13.5
14.4
15.3
16.2
17.1
18.0
19.8
21.6
22.4
25.2
27.0
29.7
I
ZM
(Note 5)
mAdc
115
105
98
88
81
75
68
61
56
51
46
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
13
12
N
D
μV/ √Hz
0.5
0.5
0.5
0.5
0.5
0.5
1.0
1.0
1.0
2.0
4.0
4.0
4.0
5.0
10
15
20
20
20
20
20
20
20
20
20
20
20
20
20
VOLTS
0.90
0.90
0.85
0.75
0.60
0.65
0.30
0.20
0.10
0.05
0.05
0.05
0.10
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.20
0.25
0.30
0.35
0.40
0.45
0.50
mAdc
2.0
2.0
2.0
2.0
1.0
0.25
0.25
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
1N5518BUR-1
1N5519BUR-1
1N5520BUR-1
1N5521BUR-1
1N5522BUR-1
1N5523BUR-1
1N5524BUR-1
1N5525BUR-1
1N5526BUR-1
1N5527BUR-1
1N5528BUR-1
1N5529BUR-1
1N5530BUR-1
1N5531BUR-1
1N5532BUR-1
1N5533BUR-1
1N5534BUR-1
1N5535BUR-1
1N5536BUR-1
1N5537BUR-1
1N5538BUR-1
1N5539BUR-1
1N5540BUR-1
1N5541BUR-1
1N5542BUR-1
1N5543BUR-1
1N5544BUR-1
1N5545BUR-1
1N5546BUR-1
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
28.0
30.0
33.0
NOTES:
1. TOLERANCE AND VOLTAGE DESIGNATION –
The JEDEC type numbers without a letter prior to the UR-1 suffix are +/-20% with guaranteed limits for only V
Z
, I
R
, and V
F
.
Units with “A” prior to the UR-1 suffix are +/-10% with guaranteed limits for V
Z
, I
R
, and V
F
. Units with guaranteed limits for all six
parameters are indicated by a B suffix for +/-5.0% units, C suffix for +/-2.0% and D suffix for +/-1.0% prior to the UR-1 suffix.
2. ZENER VOLTAGE (V
Z
) MEASUREMENT –
o
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambient temperature of 25 C.
3. ZENER IMPEDANCE (Z
Z
) MEASUREMENT –
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current having an rms value equal to 10%
of the dc zener current (I
ZT
) is superimposed on I
ZT
.
4. REVERSE CURRENT (I
R
) –
Reverse currents are guaranteed and are measured at V
R
as shown on the table.
5. MAXIMUM REGULATOR CURRENT (I
ZM
) –
The maximum current shown is as shown in MIL-PRF-19500/437.
6. MAXIMUM REGULATION FACTOR (ΔV
Z
) –
ΔV
Z
is the maximum difference between V
Z
at I
ZT
and V
Z
at I
ZL
measured with the device junction in thermal equilibrium.
7. PART NUMBER – These may be ordered as either 1N5518BUR-1 thru 1N5546BUR-1 or as MLL5518B-1 thru MLL5546B-1 part
numbers. For military types, use the 1NxxxUR-1 format and also include JAN, JANTX, or JANTXV prefix for desired screening
level, e.g. JANTX1N5518BUR-1, JANTXV1N5532BUR-1, JANTXV1N5534CUR-1, JANTXV1N5545DUR-1, etc.
1N5518BUR – 1N5546BUR
Copyright
©
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
IN5518BUR-1 thru 1N5546BUR-1
(or MLL5518B-1 thru MLL5546B-1)
SCOTTSDALE DIVISION
Low Voltage Surface Mount
500 mW Avalanche Diodes
GRAPHS and CIRCUIT
P
d
Rated Power Dissipation (mW)
Noise density, (N
D
) is specified in
microvolt-rms per square-root-hertz.
Actual measurement is performed
using a 1 kHz to 3 kHz frequency
bandpass filter at a constant Zener test
o
current (I
ZT
) at 25 C ambient
temperature.
WWW .
Microsemi
.C
OM
T
EC
T
A
o
T
EC
, End Cap Temperature ( C) or T
A
Ambient temperature on FR4 PC board
FIGURE 1
Noise Density
Measurement Circuit
FIGURE 2
Power Derating Curve
Typical Capacitance in Picofarads (pf)
FIGURE 3
Zener Voltage V
Z
Capacitance vs. Zener Voltage (Typical)
FIGURE 4
Zener Diode Characteristics and Symbol Identification
1N5518BUR – 1N5546BUR
PACKAGE DIMENSIONS
DIM
A
B
C
INCHES
MIN
MAX
0.063
0.067
0.130
0.146
0.016
0.022
MILLIMETERS
MIN
MAX
1.60
1.70
3.30
3.70
0.41
0.55
A
B
C
PAD LAYOUT
INCHES
.200
.055
.080
mm
5.08
1.40
2.03
Copyright
©
2003
10-31-2003 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
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