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1N5622GP/66-E3

DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DO-15
包装说明
O-PALF-W2
针数
2
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-204AC
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT APPLICABLE
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向恢复时间
2 µs
表面贴装
NO
端子面层
MATTE TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
Base Number Matches
1
文档预览
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
j
max.
1.0 A
200 V to 1000 V
50 A
0.5 µA
1.2 V
175 °C
®
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly
by Patent No. 3,930,306
DO-204AC (DO-15)
Features
• Superectifier structure for High Reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current, I
R
less than 0.1 µA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Maximum Ratings
(T
A
= 25 °C unless otherwise noted)
Parameter
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
* Maximum DC blocking voltage
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at T
A
= 55 °C
* Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
* Operating junction temperature range
* Storage temperature range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
T
STG
1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
200
140
200
400
280
400
600
420
600
1.0
50
- 65 to + 175
- 65 to + 175
800
560
800
1000
700
1000
Unit
V
V
V
A
A
°C
C
Document Number 88520
14-Oct-05
www.vishay.com
1
1N5614GP thru 1N5622GP
Vishay General Semiconductor
Electrical Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
* Minimum reverse
breakdown voltage
Test condition
at 50 µA
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP 1N5622GP
V
BR
V
F
T
A
= 25 °C
T
A
= 100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 12 V, 1 MHz
I
R
220
440
660
1.2
0.5
25
2.0
45
35
25
20
15
880
1100
Unit
V
V
µA
* Maximum instantaneous at 1.0 A
forward voltage
* Maximum DC reverse
current at rated DC
blocking voltage
* Maximum reverse
recovery time
Maximum junction
capacitance
t
rr
C
J
µs
pF
Thermal Characteristics
(T
A
= 25 °C unless otherwise noted)
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
*JEDEC registered values
Symbol 1N5614GP 1N5616GP 1N5618GP 1N5620GP
R
θJA
45
1N522GP
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
Average Forward Rectified Current (A)
1.0
50
Peak Forward Surge Current (A)
60 Hz
Resistive or
Inductive Load
0.75
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
40
30
0.5
20
0.25
0.375” (9.5 mm) Lead Length
0
25
50
75
100
125
150
175
10
0
1
10
100
Ambient Temperature, °C
Number
of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88520
14-Oct-05
1N5614GP thru 1N5622GP
Vishay General Semiconductor
10
30
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
10
Instantaneous Forward Current (A)
1
T
J
= 25 °C
0.1
Pulse
Width
= 300
µs
1% Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Junction Capacitance (pF)
T
J
= 150 °C
1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Current (µA)
10
T
J
= 125 °C
1
T
J
= 75 °C
0.1
T
J
= 25 °C
0.01
0
20
40
60
80
100
Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88520
14-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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