1N5817 THRU 1N5819
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
CURRENT 1.0Ampere
VOLTAGE 20 to 40 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.33 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified
current 0.375"(9.5mm) lead length at T
L
=90℃
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method) at T
L
=70℃
Maximum instantaneous forward voltage at 1.0A (Note 1)
Maximum instantaneous forward voltage at 3.1A (Note 2)
Maximum instantaneous reverse current
at rated DC blocking voltage (Note1)
Typical junction capacitance (Note 3)
Typical thermal resistance (Note 2)
Operating junction temperature range
T
A
=25℃
T
A
=100℃
I
R
C
J
Rθ
JA
Rθ
JL
T
J,
T
STG
V
RRM
V
RMS
V
DC
V
RSM
I(
AV
)
1N5817
20
14
20
24
1N5818
1N5819
40
28
40
48
Units
Volts
Volts
Volts
Volts
Amp
30
21
30
36
1.0
I
FSM
V
F
V
F
0.450
0.750
25.0
0.550
0.875
1.0
10.0
110.0
50.0
15.0
-65 to +125
0.600
0.900
Amps
Volts
mA
P
F
℃/W
℃
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to ambient P.C.B. mounted, with 1.5X1.5"(38X38mm) copper pads
(3) Measured at 1.0MHz and reverse voltage of 4.0 volts
RATINGS AND CHARACTERISTIC CURVES 1N5817 THRU 1N5819
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
25
PEAK FORWARD SURGE
CURRENT(AMPERES)
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
1
0.75
0.5
0.25
0
0
20
40
60
80
100
120
140
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
20
15
10
5
0
1
10
LEAD TEMPERATURE (℃)
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
INSTANTANEOUS FORWARD CURRENT (AMPERES)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
10
T
J
=125℃
PULSE WIDTH=300
㎲
1% DUTY CYCLE
10
1
T
J
=25℃
1.0
T
J
=125℃
0.1
0.1
T
J
=75℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
T
J
=25℃
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
400
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
TRANSIENT THERMAL IMPEDANCE,℃/ W
JUNCTION CAPACITANCE(pF)
10
100
1
10
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
DIY/开源硬件专区
