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1N5817 THRU 1N5819

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage -

20 to 40 Volts

DO-204AL

(DO-41)

Forward Current -

1.0 Ampere

FEATURES

♦

Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦

Metal silicon junction, majority carrier conduction

♦

Guardring for overvoltage protection

♦

Low power loss, high efficiency

♦

Low forward voltage drop

♦

High temperature soldering guaranteed:

250°C/10 seconds, 0.375" (9.5mm) lead length,

5 lbs. (2.3 kg) tension

♦

For glass DO-41 add “G” suffix and for glass MELF

add “M” suffix

Glass MELF

0.107 (2.7)

0.080 (2.0)

DIA.

1.0 (25.4)

MIN.

.102 (2.6)

.094 (2.4)

0.205 (5.2)

0.160 (4.1)

.022 (0.55)

.205 (5.2)

.189 (4.8)

MECHANICAL DATA

1.0 (25.4)

MIN.

Use “M” suffix

Dimensions in inches and (millimeters)

0.034 (0.86)

0.028 (0.71)

DIA.

TE:

Lead diameter is

0.026 (0.66)

for suffix "E" pa

Use “G” suffix

2.6 mm max. for glass DO-41

4.1 mm max. for glass DO-41

if glass body DO-41

0.023 (0.58)

Case:

JEDEC DO-204AL molded plastic body, glass body,

or glass MELF body

Terminals:

Plated leads, solderable per MIL-STD-750,

Method 2026

Polarity:

Color band denotes cathode end

(band is green on MELF)

Weight:

plastic body DO-41: 0.34 gram

glass body DO-41: 0.35 gram

glass MELF: 0.25 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

1N5817

1N5818

1N5819

UNITS

* Maximum repetitive peak reverse voltage

Maximum RMS voltage

* Maximum DC blocking voltage

* Maximum non-repetitive peak reverse voltage

* Maximum average forward rectified current

0.375" (9.5mm) lead length at T

=90°C

* Peak forward surge current, 8.3ms single half sine-

wave superimposed on rated load (JEDEC Method) at T

=70°C

* Maximum instantaneous forward voltage at 1.0A

(NOTE 1)

* Maximum instantaneous forward voltage at 3.1A

(NOTE 1)

* Maximum instantaneous reverse current at

rated DC reverse voltage

=25°C

(NOTE 1)

=100°C

Typical thermal resistance

(NOTE 2)

Typical junction capacitance

(NOTE 3)

RRM

RMS

RSM

(AV)

FSM

ΘJA

ΘJL

, T

STG

1.0

25.0

Volts

Amp

Amps

0.450

0.750

0.550

0.875

1.0

10.0

110

-65 to +125

0.600

0.900

Volts

°C/W

°C

* Storage and operating junction temperature range

*JEDEC registered values

NOTES:

(1) Pulse test: 300µs pulse width, 1% duty cycle

(2) Thermal resistance from junction to lead, and/or to ambient P.C.B. mounted with 0.375” (9.5mm) lead length with 1.5 x 1.5” (38 x 38mm) copper pads

(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 volts

4/8/99

RATINGS AND CHARACTERISTIC CURVES 1N5817 THRU 1N5819

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

PEAK FORWARD SURGE CURRENT,

AMPERES

FIG. 1 - FORWARD CURRENT DERATING CURVE

AVERAGE FORWARD CURRENT,

AMPERES

max.

8.3ms SINGLE HALF SINE-WAVE

(JEDEC Method)

0.75

RESISTIVE OR

INDUCTIVE LOAD

0.375" (9.5mm)

LEAD LENGTH

0.5

0.25

100

120

140

LEAD TEMPERATURE, °C

NUMBER OF CYCLES AT 60 H

100

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT,

AMPERES

=125°C

PULSE WIDTH=300µs

1% DUTY CYCLE

FIG. 4 - TYPICAL REVERSE

CHARACTERISTICS

100

INSTANTANEOUS REVERSE CURRENT,

MILLIAMPERES

=125°C

=25°C

=75°C

0.1

0.01

=25°C

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

0.001

100

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE,

°C/W

400

100

JUNCTION CAPACITANCE, pF

100

=25°C

f=1.0 MHz

Vsig=50mVp-p

0.1

100

0.1

0.01

0.1

PULSE DURATION, sec.

100

REVERSE VOLTAGE, VOLTS

参数对比

与1N5818G相近的元器件有：1N5817M、1N5818M、1N5819M、1N5817G、1N5819G。描述及对比如下：

型号	1N5818G	1N5817M	1N5818M	1N5819M	1N5817G	1N5819G
描述	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-41, GLASS PACKAGE-2	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, GLASS, MELF-2	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, GLASS, MELF-2	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, GLASS, MELF-2	Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, GLASS PACKAGE-2	Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, GLASS PACKAGE-2
厂商名称	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp
包装说明	GLASS PACKAGE-2	GLASS, MELF-2	GLASS, MELF-2	O-LELF-R2	GLASS PACKAGE-2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Is Samacsys	N	N	N	N	N	N
其他特性	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS	LOW POWER LOSS
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	O-LALF-W2	O-LELF-R2	O-LELF-R2	O-LELF-R2	O-LALF-W2	O-LALF-W2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	1 A	1 A	1 A	1 A	1 A	1 A
封装主体材料	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大重复峰值反向电压	30 V	20 V	30 V	40 V	20 V	40 V
表面贴装	NO	YES	YES	YES	NO	NO
技术	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
端子形式	WIRE	WRAP AROUND	WRAP AROUND	WRAP AROUND	WIRE	WIRE
端子位置	AXIAL	END	END	END	AXIAL	AXIAL
Base Number Matches	1	1	1	1	1	1