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1N5822HR0G

Schottky Diodes & Rectifiers 3A, 40V, AXIAL SCHOTTKY RECTIFIER

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.525 V
JEDEC-95代码
DO-201AD
JESD-30 代码
O-PALF-W2
JESD-609代码
e3
最大非重复峰值正向电流
70 A
元件数量
1
相数
1
端子数量
2
最高工作温度
125 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
参考标准
AEC-Q101
最大重复峰值反向电压
40 V
最大反向电流
500 µA
表面贴装
NO
技术
SCHOTTKY
端子面层
Tin (Sn)
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
文档预览
1N5820 - 1N5822
Taiwan Semiconductor
CREAT BY ART
3A, 20V - 40V Schottky Barrier Rectifiers
FEATURES
- Low forward voltage drop
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
1.10g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@3A
Maximum reverse current @ rated V
R
Typical Junction Capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
STG
0.475
1N5820
20
14
20
1N5821
30
21
30
3
70
0.500
0.5
10
200
40
- 55 to +125
- 55 to +125
0.525
1N5822
40
28
40
UNIT
V
V
V
A
A
V
mA
pF
°C/W
°C
°C
Document Number: D1307015
Version: H15
1N5820 - 1N5822
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
1N582x
(Note 1)
PACKING
CODE
A0
R0
B0
X0
Note 1: "x" defines voltage from 20V (1N5820) to 40V (1N5822)
*: Optional available
PACKING CODE
SUFFIX
(*)
PACKAGE
DO-201AD
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
Forming
H
G
DO-201AD
DO-201AD
DO-201AD
EXAMPLE
PREFERRED P/N
1N5820HA0G
PART NO.
1N5820
PART NO.
SUFFIX
H
PACKING CODE
A0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE CURRENT (A)
4
80
70
60
50
40
30
20
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
8.3ms Single Half Sine Wave
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
AVERAGE FORWARD
A
CURRENT (A)
3
2
RESISTIVE OF
INDUCTIVE LOAD
1
0
0
20
40
60
80
100
(
o
C)
120
140
LEAD TEMPERATURE
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS REVERSE
A
CURRENT (mA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
10
T
J
=100°C
INSTANTANEOUS FORWARD
A
CURRENT (A)
1
10
1N5820
1N5821-1N5822
1
Pulse Width=300μs
1% Duty Cycle
0.1
T
J
=75°C
0.01
T
J
=25°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
FORWARD VOLTAGE (V)
0.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: D1307015
Version: H15
1N5820 - 1N5822
Taiwan Semiconductor
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE (pF)
A
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
100
100
TRANSIENT THERMAL
IMPEDANCE (°C/W)
1
10
100
10
1
f=1.0MHz
Vslg=50mVp-p
10
0.1
REVERSE VOLTAGE (V)
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
DIMENSIONS
DO-201AD
Unit (mm)
Min
A
B
C
D
E
5.00
1.20
25.40
8.50
25.40
Max
5.60
1.30
-
9.50
-
Unit (inch)
Min
0.197
0.048
1.000
0.335
1.000
Max
0.220
0.052
-
0.375
-
DIM.
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Document Number: D1307015
Version: H15
1N5820 - 1N5822
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: D1307015
Version: H15
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参数对比
与1N5822HR0G相近的元器件有:1N5822、1N5820、1N5820HR0、1N5822HR0。描述及对比如下:
型号 1N5822HR0G 1N5822 1N5820 1N5820HR0 1N5822HR0
描述 Schottky Diodes & Rectifiers 3A, 40V, AXIAL SCHOTTKY RECTIFIER Schottky Diodes & Rectifiers Vr/40V Io/3A T/R Schottky Diodes & Rectifiers Vr/20V Io/3A T/R Schottky Diodes & Rectifiers 3A, 20V, AXIAL SCHOTTKY RECTIFIER Schottky Diodes & Rectifiers 3A, 40V, AXIAL SCHOTTKY RECTIFIER
是否Rohs认证 符合 符合 符合 - -
包装说明 O-PALF-W2 GREEN, PLASTIC PACKAGE-2 O-PALF-W2 - -
Reach Compliance Code compliant compliant compliant - -
ECCN代码 EAR99 EAR99 EAR99 - -
应用 GENERAL PURPOSE EFFICIENCY EFFICIENCY - -
外壳连接 ISOLATED ISOLATED ISOLATED - -
配置 SINGLE SINGLE SINGLE - -
二极管元件材料 SILICON SILICON SILICON - -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - -
最大正向电压 (VF) 0.525 V 0.95 V 0.85 V - -
JEDEC-95代码 DO-201AD DO-201AD DO-201AD - -
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 - -
最大非重复峰值正向电流 70 A 70 A 70 A - -
元件数量 1 1 1 - -
相数 1 1 1 - -
端子数量 2 2 2 - -
最高工作温度 125 °C 125 °C 125 °C - -
最低工作温度 -55 °C -65 °C -65 °C - -
最大输出电流 3 A 3 A 3 A - -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
封装形状 ROUND ROUND ROUND - -
封装形式 LONG FORM LONG FORM LONG FORM - -
最大重复峰值反向电压 40 V 40 V 20 V - -
表面贴装 NO NO NO - -
技术 SCHOTTKY SCHOTTKY SCHOTTKY - -
端子面层 Tin (Sn) Pure Tin (Sn) Pure Tin (Sn) - -
端子形式 WIRE WIRE WIRE - -
端子位置 AXIAL AXIAL AXIAL - -
Base Number Matches 1 1 1 - -
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