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1N6065E3

Trans Voltage Suppressor Diode, 1500W, 95V V(RWM), Bidirectional, 1 Element, Silicon, DO-202AA, HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
O-MALF-W2
Reach Compliance Code
compli
ECCN代码
EAR99
最大击穿电压
132 V
最小击穿电压
108 V
击穿电压标称值
120 V
外壳连接
ISOLATED
最大钳位电压
176 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-202AA
JESD-30 代码
O-MALF-W2
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
封装主体材料
METAL
封装形状
ROUND
封装形式
LONG FORM
极性
BIDIRECTIONAL
最大功率耗散
1 W
最大重复峰值反向电压
95 V
表面贴装
NO
技术
AVALANCHE
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
文档预览
1N6036(A)* thru 1N6072(A)*
1500 WATT BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/507
DESCRIPTION
This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC
registered selections for bidirectional devices. All have the same high Peak Pulse Power
rating of 1500 W with extremely fast response times. They are also available in military
qualified selections as described in the “Features” section herein. They are most often used
for protecting against transients from inductive switching environments, induced RF effects, or
induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are
also very successful in protecting airborne avionics and electrical systems. Since their
response time is virtually instantaneous, they can also protect from ESD and EFT per
IEC61000-4-2 and IEC61000-4-4.
Important:
For the latest information, visit our website
http://www.microsemi.com.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, and
JANTXV
FEATURES
Bidirectional TVS series in axial packages for thru-hole mounting.
Suppresses transients up to 1500 watts @ 10/1000 µs (see
Figure 1).
Clamps transients in less than 100 pico seconds.
Working voltage (V
WM
) range 5.5 V to 185 V.
Hermetically sealed DO-13 metal package.
*JAN, JANTX, JANTXV military qualifications also available per MIL-PRF-19500/507 for the tighter
tolerance “A” suffix types by adding the JAN, JANTX, or JANTXV prefix, e.g. JANTXV1N6036A,
etc.
RoHS compliant versions available (commercial grade only).
DO-13 (DO-202AA)
Package
Also available in:
DO-13 package
(unidirectional)
1N5629 – 1N5665A
Case 1 package
(plastic equivalent)
1.5KE6.8C – 1.5KE220CA
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF.
Protection from ESD & EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N6036 to 1N6072A
Class 2: 1N6036 to 1N6067A
Class 3: 1N6036 to 1N6061A
Class 4: 1N6036 to 1N6054A
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N6036 to 1N6064A
Class 2: 1N6036 to 1N6057A
Class 3: 1N6036 to 1N6049A
Class 4: 1N6036 to 1N6042A
Secondary lightning protection per IEC61000-4-5 with 2 Ohms source impedance:
Class 2: 1N6036 to 1N6048A
Class 3: 1N6036 to 1N6041A
Inherently radiation hard as described in Microsemi “MicroNote
050”.
DO-215AB package
(Gull-wing)
SMCG5.0 – SMCG170A
DO-214AB package
(J-bend)
SMCJ5.0 – SMCJ170A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
Page 1 of 6
1N6036(A)* thru 1N6072(A)*
MAXIMUM RATINGS
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Peak Pulse Power @ T
L
= +25 ºC
(2)
Rated Average Power Dissipation @ T
L
≤ +125 ºC
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
P
PP
P
M(AV)
T
SP
Value
-55 to +175
1500
1
260
Unit
ºC
W
W
o
C
Notes:
1. At 10/1000 us with repetition rate of 0.01% or less (see
Figures 1, 2, & 4).
2. At 10 mm from body (see derating in
Figure 3
and note below).
MECHANICAL and PACKAGING
CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass.
TERMINALS: All external metal surfaces are tin-lead plated and solderable per MIL-STD-750 method 2026.
MARKING: Part number.
POLARITY: Not applicable for bidirectional TVS.
TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number). Consult factory for quantities.
WEIGHT: Approx 1.4 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level*
JANTX = JANTX level*
JANTXV = JANTXV level*
Blank = Commercial
* Requires “A” suffix
1N6036
A
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Voltage Tolerance
A = 5%
Blank = 10%
JEDEC type number
(See
Electrical Characteristics
table)
Symbol
V
WM
V
(BR)
V
C
I
PP
P
PP
I
D
I
(BR)
SYMBOLS & DEFINITIONS
Definition
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition.
o
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 C.
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse
current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the
series resistance and thermal rise and positive temperature coefficient (α
V(BR)
).
Peak Pulse Current: The peak current during the impulse. (See
Figure 2)
Peak Pulse Power: The pulse power as determined by the product of V
C
and I
PP
.
Standby Current: The current at the standoff voltage (V
WM
).
Breakdown Current: The current used for measuring Breakdown Voltage (V
(BR)
).
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
Page 2 of 6
1N6036(A)* thru 1N6072(A)*
ELECTRICAL CHARACTERISTICS
@ 25
o
C (Test Both Polarities)
Rated
Standoff
Voltage
V
WM
V
(BR)min
Volts
5.5
6.0
6.5
7.0
7.0
7.5
8.0
8.5
8.5
9.0
9.0
10.0
10.0
11.0
11.0
12.0
12.0
13.0
14.0
15.0
16.0
17.0
17.0
18.0
19.0
20.0
21.0
22.0
24.0
25.0
26.0
28.0
29.0
30.0
31.0
33.0
34.0
36.0
38.0
40.0
41.0
43.0
45.0
47.0
48.0
53.0
55.0
58.0
60.0
64.0
66.0
70.0
Volts
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.5
9.9
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
Breakdown
Voltage
V
(BR)
V
(BR)max
Volts
8.25
7.88
9.02
8.61
10.00
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.5
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
@ I
(BR)
mA
10
10
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Volts
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108.0
103.0
118.0
113.0
µA
1000
1000
500
500
200
200
50
50
10
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@ I
PP
Maximum
Standby
Current
I
D
@ V
WM
Maximum
Peak Pulse
Current
I
PP
(See
Fig. 2)
Amps
128
132
120
124
109
112
100
103
93
96
87
90
79
82
68
71
64
67
56.5
59.5
51.5
54
47
49
43
45
38.5
40
34.5
36
31.5
33
29
30
26.5
28
24
25.3
22.2
23.2
20.4
21.4
18.6
19.5
16.9
17.7
15.3
16.3
13.9
14.6
12.7
13.3
Maximum
Temperature
Coefficient of
V
(BR)
α
V(BR)
o
%/ C
.061
.061
.065
.065
.068
.068
.073
.073
.075
.075
.078
.078
.081
.081
.084
.084
.086
.086
.088
.088
.090
.090
.092
.092
.094
.094
.095
.096
.097
.097
.098
.098
.099
.099
.100
.100
.101
.101
.101
.101
.102
.102
.103
.103
.104
.104
.104
.104
.105
.105
.105
.105
JEDEC
Type
No.
1N6036
*1N6036A
1N6037
*1N6037A
1N6038
*1N6038A
1N6039
*1N6039A
1N6040
*1N6040A
1N6041
*1N6041A
1N6042
*1N6042A
1N6043
*1N6043A
1N6044
*1N6044A
1N6045
*1N6045A
1N6046
*1N6046A
1N6047
*1N6047A
1N6048
*1N6048A
1N6049
*1N6049A
1N6050
*1N6050A
1N6051
*1N6051A
1N6052
*1N6052A
1N6053
*1N6053A
1N6054
*1N6054A
1N6055
*1N6055A
1N6056
*1N6056A
1N6057
*1N6057A
1N6058
*1N6058A
1N6059
*1N6059A
1N6060
*1N6060A
1N6061
*1N6061A
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
Page 3 of 6
1N6036(A)* thru 1N6072(A)*
ELECTRICAL CHARACTERISTICS
@ 25
o
C (Test Both Polarities)
Rated
Standoff
Voltage
V
WM
V
(BR)min
Volts
Volts
JEDEC
Type
No.
Breakdown
Voltage
V
(BR)
V
(BR)max
Volts
Maximum
Clamping
Voltage
V
C
@ I
PP
@ I
(BR)
mA
Volts
Maximum
Standby
Current
I
D
@ V
WM
µA
Maximum
Peak Pulse
Current
I
PP
(See
Fig. 2)
Amps
Maximum
Temperature
Coefficient of
V
(BR)
α
V(BR)
o
%/ C
.106
.106
.106
.106
.107
.107
.107
.107
.107
.107
.108
.108
.108
.108
.108
.108
.108
.108
.108
.108
.108
.108
1N6062
73.0
81.9
100.0
1
131.0
5
11.4
*1N6062A
75.0
86.5
95.5
1
125.0
5
12.0
1N6063
81.0
90.0
110.0
1
144.0
5
10.4
*1N6063A
82.0
95.0
105.0
1
137.0
5
11.0
1N6064
90.0
99.0
121.0
1
158.0
5
9.5
*1N6064A
94.0
105.0
116.0
1
152.0
5
9.9
1N6065
95.0
108.0
132.0
1
176.0
5
8.5
*1N6065A
100.0
114.0
126.0
1
168.0
5
8.9
1N6066
105.0
117.0
143.0
1
191.0
5
7.8
*1N6066A
110.0
124.0
137.0
1
182.0
5
8.2
1N6067
121.0
135.0
165.0
1
223.0
5
6.7
*1N6067A
128.0
143.0
158.0
1
213.0
5
7.0
1N6068
137.0
153.0
187.0
1
258.0
5
5.8
*1N6068A
145.0
162.0
179.0
1
245.0
5
6.1
1N6069
145.0
162.0
198.0
1
274.0
5
5.5
*1N6069A
150.0
171.0
189.0
1
261.0
5
5.7
1N6070
155.0
171.0
210.0
1
292.0
5
5.1
*1N6070A
160.0
181.0
200.0
1
278.0
5
5.4
1N6071
165.0
180.0
220.0
1
308.0
5
4.9
*1N6071A
170.0
190.0
210.0
1
294.0
5
5.1
1N6072
175.0
198.0
242.0
1
344.0
5
4.3
*1N6072A
185.0
209.0
231.0
1
328.0
5
4.6
* Also available in military qualified types by adding the prefix JAN, JANTX or JANTXV per MIL-PRF-19500/507.
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
Page 4 of 6
1N6036(A)* thru 1N6072(A)*
GRAPHS
Peak Pulse Power (P
PP
) in kW
Exponential wave-form
(See FIG. 2)
Peak Pulse Power (P
PP
) or current
(I
P
)
in percent of 25
o
C rating
Square-wave pulse
Peak Value I
PP
Pulse time duration (tp)
is defined as that point
where I
P
decays to 50%
of peak value (I
PP
).
Pulse Time (tp)
Time (t) in milliseconds
FIG. 1 –
Non-Repetitive Peak Pulse Power Rating Curve
NOTE: Peak power defined as peak voltage times peak current
FIG. 2
Pulse Wave Form For Exponential Surge
Steady-state power
dissipation (watts)
T
L
– lead Temperature
o
C
Pulse current (I
P
) in percent of I
PP
T
A
Ambient Temperature
o
C
FIG. 3
Steady-State Power Derating Curve
FIG. 4
Derating Curve
T4-LDS-0097, Rev. 3 (120714)
©2012 Microsemi Corporation
Page 5 of 6
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