1N6138A – 1N6173A
Voidless Hermetically Sealed Bidirectional
Transient Voltage Suppressors
Qualified to MIL-PRF-19500/516
DESCRIPTION
This series of industry recognized voidless, hermetically sealed bidirectional Transient Voltage
Suppressors (TVS) are military qualified to MIL-PRF-19500/516 and are ideal for high-reliability
applications where a failure cannot be tolerated. They provide a working peak “standoff” voltage
selection from 5.2 to 152 Volts with a 1500 W rating for a 10/1000
µs
pulse. They are very robust
in hard-glass construction and use internal Category 1 metallurgical bonds for high reliability.
These devices are available as both a non-suffix part and an “A” version part involving different
voltage tolerances as described in the
nomenclature
section. These devices are also available in a
surface mount MELF package configuration.
Available on
commercial
versions
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
High surge current and peak pulse power provides transient voltage protection for sensitive circuits
Triple-layer passivation
Internal “Category
1”
metallurgical bonds
Voidless hermetically sealed glass package
JAN, JANTX, JANTXV and JANS qualified versions are available per MIL-PRF-19500/516.
(See
part nomenclature
for all available options.)
RoHS compliant versions available (commercial grade only)
“C”
Package
Also available in:
“C” SQ-MELF
Package
APPLICATIONS / BENEFITS
•
•
•
•
•
•
•
•
•
Military and other high-reliability applications
Extremely robust construction
Extensive range in working peak “standoff” voltage (V
WM
) from 5.2 to 152 volts
1500 watt peak pulse power (P
PP
) for a 10/1000 us test pulse
ESD and EFT protection per IEC6100-4-2 and IEC61000-4-4 respectively
Protection from the secondary effects of lightning per select levels in IEC61000-4-5.
Flexible axial-leaded mounting terminals
Non-sensitive to ESD per MIL-STD-750 method 1020
Inherently radiation hard as described in Microsemi “MicroNote
050”
(surface mount)
1N6138US – 1N6173US
MAXIMUM RATINGS
@
T
A
= 25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
(1)
Thermal Resistance Junction-to-Lead
Peak Pulse Power @ 25 ºC
o (1)
Off-State Power @ T
L
= 75 C
o (2)
Off-State Power @ T
A
= 25 C
Impulse Repetition Rate
Solder Temperature @ 10 s
Notes:
1.
2.
Symbol
T
J
and T
STG
R
ӨJL
P
PP
P
D
P
D
df
T
SP
Value
-55 to +175
20
1500
5.0
3.0
0.01
260
Unit
o
C
C/W
W
W
W
%
o
C
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
At 3/8 inch lead length from body (see
figure 4).
Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where T
OP
or T
J(MAX)
is not exceeded (also see
figure 6).
T4-LDS-0278, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 1 of 7
1N6138A – 1N6173A
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs
TERMINALS: Axial-leads are tin/lead over copper. RoHS compliant matte-tin is available on commercial grade only.
MARKING: Body paint and part number
POLARITY: No polarity marking for these bidirectional TVSs
TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
WEIGHT: Approximately 1270 milligrams
See
package dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N6138
A
e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Voltage Tolerance
A = Standard
Blank =5% higher V
C
, 5% lower
min. V
(BR)
and 5% lower I
PP
Symbol
α
V(BR)
V
(BR)
V
WM
I
D
V
C
P
PP
SYMBOLS & DEFINITIONS
Definition
Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in
temperature that caused it expressed in %/°C or mV/°C.
Breakdown Voltage: The voltage across the device at a specified current I
(BR)
in the breakdown region.
Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that
may be continuously applied over the standard operating temperature.
Standby Current: The current through the device at rated stand-off voltage.
Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an
impulse current (I
PP
) for a specified waveform.
Peak Pulse Power. The rated random recurring peak impulse power or rated nonrepetitive peak impulse power. The
impulse power is the maximum-rated value of the product of I
PP
and V
C
.
T4-LDS-0278, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 2 of 7
1N6138A – 1N6173A
ELECTRICAL CHARACTERISTICS
INDUSTRY
TYPE
NUMBER
(Note 1)
MINIMUM
BREAKDOWN
VOLTAGE
(Note 1)
V
(BR)
@ I
(BR)
Volts
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.0
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95.0
104.5
114.0
123.5
142.5
152.0
171.0
190.0
mA
175
175
150
150
125
125
100
100
75
75
65
65
50
50
50
40
40
30
30
30
25
25
20
20
20
20
15
15
12
12
10
10
8
8
5
5
RATED
STANDOFF
VOLTAGE
V
WM
V
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
86.6
91.2
98.8
114.0
121.6
136.8
152.0
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
µA
500
300
100
100
100
20
20
20
20
20
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
(Note 1)
V
C
@ I
PP
Volts
10.5
11.2
12.1
13.4
14.5
15.6
16.9
18.2
21.0
22.3
25.1
27.7
30.5
33.3
37.4
41.6
45.7
49.9
53.6
59.1
64.6
70.1
77.0
85.3
97.1
103.1
112.8
125.1
137.6
151.3
165.1
178.8
206.3
218.4
245.7
273.0
MAXIMUM
PEAK PULSE
CURRENT
(Note 1)
I
PP
Amps
142.8
133.9
124.0
111.9
103.4
96.2
88.8
82.4
71.4
67.3
59.8
54.2
49.2
45.0
40.1
36.0
32.8
30.1
28.0
25.4
23.2
21.4
19.5
17.6
15.4
14.5
13.3
12.0
10.9
9.9
9.1
8.4
7.3
6.9
6.1
5.5
MAXIMUM
TEMP.
COEF. OF
V
(BR)
α
V(BR)
%/
o
C
0.05
.06
.06
.06
.07
.07
.07
.08
.08
.08
.085
.085
.085
.09
.09
.09
.095
.095
.095
.095
.095
.095
.095
.100
.100
.100
.100
.100
.100
.100
.100
.105
.105
.105
.110
.110
1N6138A
1N6139A
1N6140A
1N6141A
1N6142A
1N6143A
1N6144A
1N6145A
1N6146A
1N6147A
1N6148A
1N6149A
1N6150A
1N6151A
1N6152A
1N6153A
1N6154A
1N6155A
1N6156A
1N6157A
1N6158A
1N6159A
1N6160A
1N6161A
1N6162A
1N6163A
1N6164A
1N6165A
1N6166A
1N6167A
1N6168A
1N6169A
1N6170A
1N6171A
1N6172A
1N6173A
Notes:
1. Part number without the A suffix has 5% higher V
C
, 5% lower minimum V
(BR)
, and 5% lower I
PP
.
T4-LDS-0278, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 3 of 7
1N6138A – 1N6173A
GRAPHS
Peak Pulse Power (P
PP
)
Pulse Time (t
p
)
FIGURE 1
Peak Pulse Power vs. Pulse Time
Max Peak Pulse Power (P
PP
) or current (I
PP
)
in percent of Max Ratings
Junction Temperature (T
J
) in °C
FIGURE 2
Peak Pulse Power vs T
J
(prior to impulse)
T4-LDS-0278, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 4 of 7
1N6138A – 1N6173A
GRAPHS
Pulse Current (I
PP)
in Percent of I
PP
Time (t) in milliseconds
FIGURE 3
Pulse Wave Form
DC Operation (W) Maximum Rating
T
A
(°C) (Ambient)
FIGURE 4
Temperature-Power Derating Curve
T4-LDS-0278, Rev. 2 (11/19/13)
©2013 Microsemi Corporation
Page 5 of 7
