首页 > 器件类别 > 分立半导体 > 二极管

1N6296C

Trans Voltage Suppressor Diode,

器件类别:分立半导体    二极管   

厂商名称:Galaxy Microelectronics

下载文档
器件参数
参数名称
属性值
Objectid
7260648919
Reach Compliance Code
unknown
Country Of Origin
Mainland China
ECCN代码
EAR99
YTEOL
6.05
其他特性
EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
最大击穿电压
121 V
最小击穿电压
99 V
击穿电压标称值
110 V
外壳连接
ISOLATED
最大钳位电压
158 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-201AE
JESD-30 代码
O-PALF-W2
最大非重复峰值反向功率耗散
1500 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
极性
BIDIRECTIONAL
最大功率耗散
6.5 W
最大重复峰值反向电压
89.2 V
最大反向电流
1 µA
反向测试电压
89.2 V
表面贴装
NO
技术
AVALANCHE
端子形式
WIRE
端子位置
AXIAL
文档预览
BL
FEATURES
GALAXY ELECTRICAL
1N6267- - -1N6303A
BREAKDOWN VOLTAGE: 6.8 --- 200 V
PEAK PULSE POWER: 1500 W
TRANSIENT VOLTAGE SUPPRESSOR
Plastic package
has
Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power capability with a 10/1000μs
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bi-directional types
For devices with V
(BR)
10V,ID are typically less than 1.0μA
/ 10 seconds,
High tem perature soldering guaranteed:265
DO-27S
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
MECHANICAL DATA
Case:JEDEC DO-201AE, molded plastic
Polarity: Color band denotes positive end
( cathode ) except for bidirectional
Weight: 0.032 ounces,
0.9
grams
Mounting position: Any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bi-directional use C or CA suffix for types 1N6267 thru types 1N6303A (e.g. 1N6267, 1N6303A).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
SYMBOL
Peak pow er dissipation w ith a 10/1000μs w aveform (NOTE 1, FIG.1)
Peak pulse current w ith a 10/1000μs w aveform (NOTE 1)
Steady state pow er dissipation at T
L
=75
fffff
lead lengths 0.375"(9.5mm) (NOTE 2)
Peak forw ard surge current, 8.3ms single half
ffffsine-w
ave superimposed on rated load (JEDEC Method) (NOTE 3)
Maximum instantaneous forw ard voltage at
100
A for unidirectional only (NOTE 4)
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
VALUE
Minimum 1500
SEE TABLE 1
6.5
200.0
3.5/5.0
20
75
-55---+150
UNIT
W
A
W
A
V
/W
/W
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25 per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-w ave or equare w ave, duty cycle=4 pulses per minute maximum
(4) V
F
=3.5 Volt max. for devices of V
(BR)
200V, and V
F
=5.0 Volt max. for devices of V
(BR)
>200V
www.galaxycn.com
Document Number
1785011
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS at(T
A
=25
Breakdow n
Voltage V
(BR)
(V)
(NOTE1)
Min
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.0
9.5
9.9
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
Max
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
Test
Current
at I
T
(mA)
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
unless otherwise noted)
Maximum
Pea
k
Puls e
I
PPM(NOTE2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
TABLE 1
Maximum
Temperature
Coefficient of
V
(BR)
(%/ )
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
www.galaxycn.com
Device Type
Maximum
Stand-off
Reverse
Voltage
Leakge
V
WM
(V)
at V
WM
I
D (NOTE3)(μ
A
)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Document Number
1785011
BL
GALAXY ELECTRICAL
2.
ELECTRICAL CHARACTERISTICS at(T
A
=25
Breakdow n
Voltage V
(BR)
(V)
(NOTE1)
Min
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
Max
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
unless otherwise noted)
Maximum
Reverse
Leakge
at V
WM
I
D (NOTE3)(μ
A
)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.
0
1.0
1.0
1.0
1.0
1.0
Maximum
Peak Puls e
I
PPM(NOTE2)
(A)
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
TABLE 1(Cont' d)
Maximum
Clamping
Voltage at
I
PPM
V
C
(V)
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
Maximum
Temperature
Coefficient
of V
(BR)
(%/ )
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
Device Type
Test Stand-off
Current Voltage
at I
T
V
WM
(mA)
(V)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
NOTE: For bidirectional use C or CA suffix for types
1N6267
thru types
1N6303A(e.g.1N6267,1N6303A).
Electrical
characteristics apply in both directions.
www.galaxycn.com
Document Number
1785011
BL
GALAXY ELECTRICAL
3.
RATINGS AND CHARACTERISTIC CURVES
PEAK PULSE POWER (P ) OR CURRENT
PP
1N6267- -
-1N6303A
FIG.1 -- PEAK PULSE POWER RATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN if FIG.3
T
A
=25
10
FIG.2 -- PULSE DERATING CURVE
DERATING IN PERCENTAGE, %
100
75
50
1.0
25
0.1
0.1μ
s
1.0μ
s
10μ
s
100μ
s
1ms
10ms
(I
PPM
)
tol, PULSE WIDTH, SEC.
0
0
25
50
75
100
125
150
175
200
FIG.3
-- PULSE WAVEFORM
150
PULES WIDTH (td)
is DEFINDE as the
POINT WHERE the
PEAK CURRENT
DECAYS to 50% of
I
PPM
TA, AMBIENT TEMPERATURE.
I
PPM
, PEAK PULSE CURRENT, %
tr=10¦
Μ
s ec
PEAK VALUE
I
PPM
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
H HHHHHHHH HUNIDIRECTIONAL
100
HALF VALUE - I
PPM
2
6.000
T
J
=25
f=1.0MH
Z
Vsig=50mVp-p
MEASURED at
ZEROBIAS
50
C
J
, JUNCTION CAPACITANCE, Pf
10/1000¦
Μ
s ec.
WAVEFORM as
DEFINDE by R.E.A.
10.000
td
0
0
1.0
2.0
3.0
4.0
t, TIME, ms
FIG.5 -- STEADY STATE POWER DERATING CURVE
P
M(AV)
, STRADY STATE POWER
1.00
1000
MEASURED at
STAND-OFF
VOLTAGE, V
WM
L=0.375"(9.5mm)
LEAD LENGTHS
DISSIPATION, W
0.75
60 H
Z
RESISTIVEOR
INDUCTIVE LOAD
10
1.0
10
100
200
0.50
0.25
1.6 x 1.6 x .040"
(40 x 40 x 1mm.)
COPPER HEAT SINKS
V
(BA)
, BREAKDOWN VOLTAGE, V
0
0
25
50
75
100
125
150
175
200
T
L
, LEAD TEMPERATURE,
I
D
, INSTANTANEOUS REVERSE
I
FSM
, PEAK FORWARD SURGE
FIG.7 -- TYPICAL REVERSE LEAKAGE
JJJJJJJJJJJJJJJJJJCHARACTERISTICS
1 .0 0 0
FIG.6 -- MAXIMUN NON-REPETITIVE FORWARD
HHHHHH HSURGE
CURRENT UNIDIRECTIONAL ONLY
200
LEAKAGE CURRENT,
mA
CURRENT, A
100
M E A S U R E D A T D E V IC E S
S T A N D -O F F V O L T A G E ,
V W M
100
8.3ms SINGLE HALF SINE-MAVE
(JEDEC METHOD)
10
1
0 .1
T
A
= 25
0 .0 1
0 .0 0 1
0
100
200
300
400
440
500
10
1
10
100
V
(BR)
, BREAKDOWN VOLTAGE, V
NUMBER OF CYCLES AT 60 Hz
www.galaxycn.com
Document Number
1785011
BL
GALAXY ELECTRICAL
4.
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消