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1N958BRL2

Zener Diode, 7.5V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS, DO-204AH, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Tak Cheong

厂商官网:http://www.takcheong.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DO-204
包装说明
O-LALF-W2
针数
2
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
5.5 Ω
JEDEC-95代码
DO-35
JESD-30 代码
O-LALF-W2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
200 °C
最低工作温度
-65 °C
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
7.5 V
表面贴装
NO
技术
ZENER
端子面层
TIN
端子形式
WIRE
端子位置
AXIAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
5%
工作测试电流
16.5 mA
Base Number Matches
1
文档预览
TAK CHEONG
500 mW DO-35 Hermetically
Sealed Glass Zener Voltage
Regulators
Licensed by
ON Semiconductor
,
A trademark of
semiconductor
Components Industries, LLC for
Zener Technology
and
Products
.
Maximum Ratings
(Note 1)
Rating
Maximum Steady State Power Dissipation
@TL≤75℃,
Lead Length = 3/8”
Derate Above 75℃
Operating and Storage
Temperature Range
Symbol
P
D
Value
500
4.0
T
J
, T
stg
-65 to +200
Units
mW
mW/℃
°C
AXIAL LEAD
DO35
Note 1: Some part number series have lower JEDEC registered ratings.
Specification Features:
Zener Voltage Range = 6.8V to 100V
ESD Rating of Clas 3 (>6 KV) per Human Body Model
DO-35 Package (DO-204AH)
Double Slug Type Construction
Metallurgical Bonded Construction
Cathode
Anode
Specification Features:
Case
:
Double slug type, hermetically sealed glass
Finish
:
All external surfaces are corrosion resistant and leads are readily solderable
Polarity :
Cathode indicated by polarity band
Mounting:
Any
Maximum Lead Temperature for Soldering Purposes
230℃, 1/16” from the case for 10 seconds
L
9xxB
L
9x
xB
= Logo
= 1N9xxB Device Code
Ordering Information
Device
1N9xxB
1N9xxBRL
1N9xxBRL2*
1N9xxBRR1 !
1N9xxBRR2 i
1N9xxBTA
1N9xxBTA2*
1N9xxBRA1 !
1N9xxBRA2 i
Package
Axial Lead
Axial Lead
Axial Lead
Lead Form
Lead Form
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Quantity
3000 Units / Box
5000 Units / Tape & Reel
5000 Units / Tape & Reel
3000 Units / Radial Tape & Reel
3000 Units / Radial Tape & Reel
5000 Units / Tape & Ammo
5000 Units / Tape & Ammo
3000 Units / Radial Tape & Ammo
3000 Units / Radial Tape & Ammo
* The “2” suffix refer to 26mm tape spacing.
! “1”: Polarity band
up
with cathode lead off first.
i “2”: Polarity band
down
with cathode lead off first.
Devices listed in
bold italic
are Tak Cheong
Preferred
devices.
Preferred
devices are recommended choices
for future use and best overall value.
December 2005 / B
http://takcheong.com
1
1N957B through 1N992B Series
®
1N957B through 1N992B Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless
otherwise noted, V
F
= 1.5 V Max @ I
F
= 200mA for all types)
Symbol
V
Z
I
ZT
Z
ZT
I
ZM
I
R
V
R
I
F
V
F
I
ZM
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Zener Current
Maximum Zener Impedance @ I
ZT
Maximum DC Zener Current
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum DC Zener Current
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200mA for all types)
Zener Voltage
(Note 3.)
Device
(Note 2.)
Zener Impedance
(Note 4.)
@ I
ZT
Z
ZT
@ I
ZT
(Ω)
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13
16
17
21
25
29
33
41
49
58
70
80
93
Z
ZK
@ I
ZK
(Ω)
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
(mA)
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
(µA)
µ
150
75
50
25
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(Volts)
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
I
ZM
(Note 5.)
Device
Marking
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
V
Z
(Volts)
Min
6.46
7.125
7.79
8.645
9.5
10.45
11.4
12.35
14.25
15.2
17.1
19
20.9
22.8
25.65
28.5
31.35
34.2
37.05
40.85
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
Max
7.14
7.875
8.61
9.555
10.5
11.55
12.6
13.65
15.75
16.8
18.9
21
23.1
25.2
28.35
31.5
34.65
37.8
40.95
45.15
(mA)
18.5
16.5
15
14
12.5
11.5
10.5
9.5
8.5
7.8
7
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3
(mA)
47
42
38
35
32
28
26
24
21
19
17
15
14
13
11
10
9.2
8.5
7.8
7
1N957B
1N958B
1N959B
1N960B
1N961B
1N962B
1N963B
1N964B
1N965B
1N966B
1N967B
1N968B
1N969B
1N970B
1N971B
1N972B
1N973B
1N974B
1N975B
1N976B
2. TOLERANCE AND TYPE NUMBER DESIGNATION (V
Z
)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
3. ZENER VOLTAGE (V
Z
) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±1°C
and 3/8” lead length.
4. ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for I
Z(AC)
= 0.1 I
Z(DC)
with AC frequency = 60Hz.
5. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
Values shown are based on the JEDEC rating of 400mW where the actual zener voltage (V
Z
) is known at the operating
point, the zener current may be increased and is limited by the derating curve.
http://www.takcheong.com
2
1N957B through 1N992B Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25ºC unless otherwise noted, V
F
= 1.5 V Max @ I
F
= 200mA for all types)
Zener Voltage
(Note 7.)
Device
(Note 6.)
Zener Impedance
(Note 8.)
@ I
ZT
Z
ZT
@ I
ZT
(Ω)
105
125
150
185
230
270
330
400
500
750
900
1100
1500
1700
2200
2500
Z
ZK
@ I
ZK
(Ω)
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
4500
5000
6000
6500
7100
8000
(mA)
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
(µA)
µ
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(Volts)
35.8
38.8
42.6
47.1
51.7
56
62.2
69.2
76
83.6
91.2
98.8
114
121.6
136.8
152
I
ZM
(Note 9.)
Device
Marking
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
1N983B
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
V
Z
(Volts)
Min
44.65
48.45
53.2
58.9
64.6
71.25
77.9
86.45
95
104.5
114
123.5
142.5
152
171
190
Nom
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Max
49.35
53.55
58.8
65.1
71.4
78.75
86.1
95.55
105
115.5
126
136.5
157.5
168
189
210
(mA)
2.7
2.5
2.2
2
1.8
1.7
1.5
1.4
1.3
1.1
1
0.95
0.85
0.8
0.68
0.65
(mA)
6.4
5.9
5.4
4.9
4.5
4.1
3.7
3.3
3
2.7
2.5
2.3
2
1.9
1.7
1.5
1N977B
1N978B
1N979B
1N980B
1N981B
1N982B
1N983B
1N984B
1N985B
1N986B
1N987B
1N988B
1N989B
1N990B
1N991B
1N992B
6. TOLERANCE AND TYPE NUMBER DESIGNATION (V
Z
)
The type numbers listed have a standard tolerance on the nominal zener voltage of
±5%.
7. ZENER VOLTAGE (V
Z
) MEASUREMENT
Nominal zener voltage is measured with the device junction in the thermal equilibrium at the lead temperature (T
L
) at 30°C
±1°C
and 3/8” lead length.
8. ZENER IMPEDANCE (Z
Z
) DERIVATION
Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits
are for I
Z(AC)
= 0.1 I
Z(DC)
with AC frequency = 60Hz.
9. MAXIMUM ZENER CURRENT RATINGS (I
ZM
)
Values shown are based on the JEDEC rating of 400mW where the actual zener voltage (V
Z
) is known at the operating
point, the zener current may be increased and is limited by the derating curve.
http://www.takcheong.com
3
1N957B through 1N992B Series
0.7
HEAT
SINKS
0.6
P D , MAXIMUM STEADY STATE
POWER DISSIPATION (WATTS)
0.5
0.4
3/8"
3/8"
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
200
T L , LEAD TEMPERATURE (°C)
Figure 1. Steady State Power Derating
http://www.takcheong.com
4
1N957B through 1N992B Series
APPLICATION NOTE - ZENER VOLTAGE
θ
JL, JUNCTION TO LEAD THERMAL RESISTANCE (
°
C/W)
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
θ
LA
P
D
+ T
A
.
500
400
L
300
L
2.4-60 V
200
θ
LA
is the lead-to-ambient thermal resistance (°C/W) and P
D
is the power dissipation. The value for
θ
LA
will vary and
depends on the device mounting method.
θ
LA
is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of T
L
, the junction temperature
may be determined by:
T
J
= T
L
+
∆T
JL
.
62-200 V
100
0
0
0.2
0.4
0.6
0.8
1
L , LEAD LENGTH TO HEAT SINK (INCH)
Figure 2. Typical Thermal Resistance
1000
7000
5000
2000
1000
700
500
200
100
70
50
I R , LEAKAGE CURRENT (
µ
A)
20
10
7
5
2
1
0.7
0.5
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
∆T
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 2 for dc power:
∆T
JL
=
θ
JL
P
D
.
For worst-case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(∆T
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
∆V
=
θ
VZ
T
J
.
θ
VZ
, the zener voltage temperature coefficient, is found
from Figures 4 and 5.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 7. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 7 be exceeded.
+125°C
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
3
4
5
6
7
8
9
10
11
12
13
VZ , NOMINAL ZENER VOLTAGE (VOLTS)
14
15
+25°C
Figure 3. Typical Leakage Current
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