DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
1PS184
High-speed double diode
Product data sheet
Supersedes data of April 1996
1996 Sep 03
NXP Semiconductors
Product data sheet
High-speed double diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 80 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
2
1
1PS184
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
DESCRIPTION
The 1PS184 consists of two
high-speed switching diodes with
common cathodes, fabricated in
planar technology, and encapsulated
in the small plastic SMD SC59
package.
APPLICATIONS
•
High-speed switching in e.g.
surface mounted circuits.
3
Top view
Marking code:
B3T.
MAM084
2
1
3
Fig.1 Simplified outline (SC59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge
t = 1
μs
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−65
−
4
0.5
250
+150
150
A
A
mW
°C
°C
−
−
−
−
−
85
80
215
125
500
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1996 Sep 03
2
NXP Semiconductors
Product data sheet
High-speed double diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
R
reverse current
see Fig.4
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.5
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured
at I
R
= 1 mA; see Fig.6
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.7
−
−
−
−
−
−
30
610
740
−
−
−
−
PARAMETER
CONDITIONS
TYP.
1PS184
MAX.
UNIT
mV
mV
V
V
nA
μA
μA
μA
pF
ns
1.0
1.2
0.5
30
100
1.5
4
V
fr
forward recovery voltage
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
250
500
UNIT
K/W
K/W
1996 Sep 03
3
NXP Semiconductors
Product data sheet
High-speed double diode
GRAPHICAL DATA
1PS184
300
IF
(mA)
200
MBD033
handbook, halfpage
300
IF
MBG382
(mA)
(1)
(2)
(3)
single diode loaded
200
double diode loaded
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, halfpage
IR
(μA)
10
MBG380
handbook, halfpage
0.8
MBG446
Cd
(pF)
0.6
1
(1)
(2)
(3)
0.4
10
1
0.2
10
2
0
100
Tj
(
o
C)
200
0
0
4
8
12
VR (V)
16
(1) V
R
= 80 V; maximum values.
(2) V
R
= 80 V; typical values.
(3) V
R
= 25 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.4
Reverse current as a function of junction
temperature.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
4
NXP Semiconductors
Product data sheet
High-speed double diode
1PS184
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R = 50
Ω
i
VR
90%
tp
t
R = 50
Ω
S
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 1 mA.
Fig.6 Reverse recovery voltage test circuit and waveforms.
I
1 k
Ω
450
Ω
I
90%
V
R S = 50
Ω
D.U.T.
OSCILLOSCOPE
R i = 50
Ω
10%
MGA882
V fr
t
tr
tp
t
input
signal
output
signal
Fig.7 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
5
