DISCRETE SEMICONDUCTORS
DATA SHEET
lfpage
M3D102
1PS70SB20
Schottky barrier diode
Product specification
2001 Mar 16
Philips Semiconductors
Product specification
Schottky barrier diode
FEATURES
•
Ultra high switching speed
•
Low forward voltage
•
Guard ring protected
•
Small SMD plastic package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
1
2
1
handbook, halfpage
1PS70SB20
DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring for stress protection
in a SOT323 (SC-70) small SMD plastic package.
3
3
2
n.c.
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
Marking code:
72.
Top view
MAM394
Fig.1 Simplified outline (SOT323; SC-70) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current
storage temperature
junction temperature
−
−
t = 8.3 ms half sine wave;
JEDEC method
−
−
CONDITIONS
−
−
−
−65
−
MIN.
MAX.
40
500
2
+150
125
V
mA
A
°C
°C
UNIT
2001 Mar 16
2
Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
CONDITIONS
I
F
= 500 mA; see Fig.2
V
R
= 35 V; see Fig.3
V
R
= 35 V; T
j
= 100
°C;
see Fig.3;
note 1
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.4
−
−
−
60
MIN.
1PS70SB20
MAX.
550
100
10
90
UNIT
mV
µA
mA
pF
VALUE
500
UNIT
K/W
2001 Mar 16
3
Philips Semiconductors
Product specification
Schottky barrier diode
GRAPHICAL DATA
MBK578
1PS70SB20
10
3
handbook, halfpage
IF
(mA)
10
2
(1)
(2)
handbook, halfpage
10
MBK579
IR
(mA)
1
(1)
(2)
10
(3)
10
−1
1
10
−2
(3)
10
−1
150
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
250
350
450
VF (mV)
550
10
−3
0
10
20
30 V (V) 40
R
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
10
2
MBK577
Cd
(pF)
10
1
0
10
20
30
VR (V)
40
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
2001 Mar 16
4
Philips Semiconductors
Product specification
Schottky barrier diode
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
1PS70SB20
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
EIAJ
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
2001 Mar 16
5
