1SMB10CAT3G Series,
SZ1SMB10CAT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Bidirectional
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
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PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10−78 V, 600 W PEAK POWER
SMB
CASE 403C
PLASTIC
Working Peak Reverse Voltage Range
−
10 V to 75 V
Standard Zener Breakdown Voltage Range
−
11.7 V to 91.7 V
Peak Power
−
600 Watts @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
ALYW
xxCG
G
A
Y
WW
xxC
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
=
(See Table on Page 3)
= Pb−Free Package
(Note: Microdot may be in either location)
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device
**
1SMBxxCAT3G
SZ1SMBxxCAT3G
Package
SMB
(Pb−Free)
SMB
(Pb−Free)
Shipping
†
2,500 /
Tape & Reel
2,500 /
Tape & Reel
260C for 10 Seconds
LEADS:
Modified L−Bend providing more contact area to bond pads
POLARITY:
Polarity band will not be indicated
MOUNTING POSITION:
Any
**The “T3” suffix refers to a 13 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
Individual devices are listed on page 3 of this data sheet.
February, 2012
−
Rev. 13
1
Publication Order Number:
1SMB10CAT3/D
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from Junction−to−Ambient
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
−65
to +150
Unit
W
W
mW/C
C/W
W
mW/C
C/W
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non−repetitive
2. 1 square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
I
T
V
C
V
BR
V
RWM
I
R
I
PP
I
I
R
V
RWM
V
BR
V
C
I
T
V
I
PP
Bi−Directional TVS
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2
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
ELECTRICAL CHARACTERISTICS
V
RWM
(Note 4)
Volts
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
75
Breakdown Voltage
I
R
@ V
RWM
mA
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
V
BR
(Note 5)
Volts
Min
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
83.3
Nom
11.69
12.84
14.00
15.16
16.42
17.58
18.74
19.90
21.06
23.37
25.69
28.11
30.42
32.74
35.06
38.63
42.11
46.74
50.32
52.63
56.11
59.69
63.16
67.79
70.21
74.84
91.65
Max
12.27
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
27.0
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
66.32
71.18
73.72
78.58
92.07
@ I
T
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
V
C
@ I
PP
(Note 6)
V
C
Volts
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
103
121
I
PP
Amps
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
11.3
10.3
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
4.9
C
typ
(Note 7)
pF
805
740
680
630
590
555
520
490
465
425
390
366
330
310
290
265
245
220
210
200
190
175
170
155
150
145
125
Device*
1SMB10CAT3G
1SMB11CAT3G
1SMB12CAT3G
1SMB13CAT3G
1SMB14CAT3G
1SMB15CAT3G
1SMB16CAT3G
1SMB17CAT3G
1SMB18CAT3G
1SMB20CAT3G
1SMB22CAT3G
1SMB24CAT3G
1SMB26CAT3G
1SMB28CAT3G
1SMB30CAT3G
1SMB33CAT3G
1SMB36CAT3G
1SMB40CAT3G
1SMB43CAT3G
1SMB45CAT3G
1SMB48CAT3G
1SMB51CAT3G
1SMB54CAT3G
1SMB58CAT3G
1SMB60CAT3G
1SMB64CAT3G
1SMB75CAT3G
Device
Marking
KXC
KZC
LEC
LGC
LKC
LMC
LPC
LRC
LTC
LVC
LXC
LZC
MEC
MGC
MKC
MMC
MPC
MRC
MTC
MVC
MXC
MZC
NEC
NGC
NKC
NMC
NRC
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data
−
600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25C
*Include SZ-prefix devices where applicable.
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3
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
100
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2
10
t
r
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
I
HALF VALUE -
PP
2
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF I
PP
.
P
PK
, PEAK POWER (kW)
1
50
t
P
0.1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
0
0
1
2
t, TIME (ms)
3
4
5
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
160
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
C
A
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
1000
1SMB10CAT3G
C, CAPACITANCE (pF)
1SMB18CAT3G
100
1SMB48CAT3G
1SMB75CAT3G
10
T
J
= 25C
f = 1 MHz
1
10
BIAS VOLTAGE (V)
100
1
T
A
, AMBIENT TEMPERATURE (C)
Figure 3. Pulse Derating Curve
Figure 4. Typical Junction Capacitance vs. Bias
Voltage
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
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4
1SMB10CAT3G Series, SZ1SMB10CAT3G Series
APPLICATION NOTES
Response Time
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 5.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 6. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
Duty Cycle Derating
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10
ms
pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
(TRANSIENT)
V
L
V
V
in
(TRANSIENT)
V
L
V
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 5.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
ms
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
Figure 6.
PULSE WIDTH
10 ms
1 ms
100
ms
50 100
Figure 7. Typical Derating Factor for Duty Cycle
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