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1SMB5929B

VOLTAGE REGULATOR DIODE
稳压二极管

器件类别:半导体    分立半导体   

厂商名称:TAYCHIPST

厂商官网:http://www.taychipst.com

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器件参数
参数名称
属性值
状态
ACTIVE
二极管类型
VOLTAGE REGULATOR DIODE
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1SMB5913B THRU 1SMB5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
3.3V-200V
1.9mA-113.6mA
FEATURES
Zener Voltage Range − 3.3 V to 200 V
ESD Rating of Class 3 (>16 kV) per Human Body Model
Flat Handling Surface for Accurate Placement
Package Design for Top Side or Bottom Circuit Board Mounting
Pb−Free Packages are Available
Mechanical Data
* Case : SMB (DO-214AA) Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Maximum Lead Temperature for Soldering Purposes :
260
°
C for 10 Seconds
* Leads : Modified L-Bend providing more contact area to bond pads.
* Polarity : Cathode indicated by polarity band.
* Mounting position : Any
* Weight : 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating
Maximum Steady State Power Dissipation at T
L
= 75°C,
Measured at Zero Lead Length
Derate Above 75
°C
Thermal Resistance From Junction to Lead
Maximum Steady State Power Dissipation at Ta = 25
°C
Measured at Zero Lead Length
Derate Above 25
°C
Thermal Resistance From Junction to Ambient
Maximum Forward Voltage at I
F
= 200 mA
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
Value
3.0
Unit
W
40
R
θ
JL
P
D
25
550
mW/°C
°C/W
mW
4.4
R
θJA
V
F
T
J
Tstg
226
1.5
- 65 to + 150
- 65 to + 150
mW/°C
°C/W
Volts
°C
°C
E-mail: sales@taychipst.com
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Web Site: www.taychipst.com
1SMB5913B THRU 1SMB5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
3.3V-200V
1.9mA-113.6mA
ELECTRICAL CHARACTERISTICS
Rating at T
L
= 30 °C unless otherwise specified
Nominal Zener
Maximum Zener
Impedance
I
ZT
(mA)
113.6
104.2
96.1
87.2
79.8
73.5
66.9
60.5
55.1
50.0
45.7
41.2
37.5
34.1
31.2
28.8
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
Z
ZT
@ I
ZT
(Ω)
10
9.0
7.5
6.0
5.0
4.0
2.0
2.0
2.5
3.0
3.5
4.0
4.5
5.5
6.5
7.0
9.0
10
12
14
17.5
19
23
26
33
38
45
53
67
70
86
100
120
140
160
200
250
300
380
450
600
700
900
1200
Z
ZK
@ I
ZK
(Ω)
500
500
500
500
500
350
250
200
200
400
400
500
500
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
I
ZK
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Maximum Reverse
Leakage Current
I
R
@ V
R
(
μ
A)
100
75
25
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
(V)
1.0
1.0
1.0
1.0
1.5
2.0
3.0
4.0
5.2
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
Maximum DC
Zener Current
I
ZM
(mA)
454
416
384
348
319
294
267
241
220
200
182
164
150
136
125
115
100
93
83
75
68
62
55
50
45
41
38
34
31
29
26
24
22
20
18
16
15
13
12
11
10
9.0
8.0
7.0
Voltage
V
Z
@ I
ZT
(V)
1SMB5913B
1SMB5914B
1SMB5915B
1SMB5916B
1SMB5917B
1SMB5918B
1SMB5919B
1SMB5920B
1SMB5921B
1SMB5922B
1SMB5923B
1SMB5924B
1SMB5925B
1SMB5926B
1SMB5927B
1SMB5928B
1SMB5929B
1SMB5930B
1SMB5931B
1SMB5932B
1SMB5933B
1SMB5934B
1SMB5935B
1SMB5936B
1SMB5937B
1SMB5938B
1SMB5939B
1SMB5940B
1SMB5941B
1SMB5942B
1SMB5943B
1SMB5944B
1SMB5945B
1SMB5946B
1SMB5947B
1SMB5948B
1SMB5949B
1SMB5950B
1SMB5951B
1SMB5952B
1SMB5953B
1SMB5954B
1SMB5955B
1SMB5956B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
TYPE
Note :
( 1 ) Suffix " B " indicates
±
5% tolerance, suffix " A " indicates
±
10% tolerance.
E-mail: sales@taychipst.com
2 of 4
Web Site: www.taychipst.com
1SMB5913B THRU 1SMB5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
3.3V-200V
1.9mA-113.6mA
RATINGS AND CHARACTERISTIC CURVES
P D , MAXIMUM POWER DISSIPATION (WATTS)
6
1SMB5913B THRU 1SMB5956B
PPK , PEAK SURGE POWER (WATTS)
1K
500
300
200
100
50
30
20
10
0.1
0.2 0.3 0.5
1
2 3
5
10
20 30 50
PW, PULSE WIDTH (ms)
100
RECTANGULAR
NONREPETITIVE
WAVEFORM
T
J
= 25°C PRIOR
TO INITIAL PULSE
5
4
3
2
1
T
A
0
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
T
L
Figure 1. Steady State Power Derating
Figure 2. Maximum Surge Power
θ
VZ , TEMPERATURE COEFFICIENT (mV/
°
C)
8
6
4
2
0
−2
−4
2
V
Z
@ I
ZT
θ
VZ , TEMPERATURE COEFFICIENT (mV/
°
C)
10
200
V
Z
@ I
ZT
100
70
50
30
20
4
6
8
V
Z
, ZENER VOLTAGE (VOLTS)
10
12
10
10
20
30
50
70
100
V
Z
, ZENER VOLTAGE (VOLTS)
200
Figure 3. Zener Voltage − To 12 Volts
Figure 4. Zener Voltage − 14 To 200 Volts
100
100
10
5
3
2
1
0.5
0.3
0.2
0.1
0
1
2
3
4
5
6
7
V
Z
, ZENER VOLTAGE (VOLTS)
8
9
10
I
ZT
, REVERSE CURRENT (mA)
I
ZT
, REVERSE CURRENT (mA)
50
30
20
50
30
20
10
5
3
2
1
0.5
0.3
0.2
0.1
0
10
20
30
40
50
60
70
80
V
Z
, ZENER VOLTAGE (VOLTS)
90
100
Figure 5. V
Z
= 3.3 thru 10 Volts
Figure 6. V
Z
= 12 thru 82 Volts
E-mail: sales@taychipst.com
3 of 4
Web Site: www.taychipst.com
1SMB5913B THRU 1SMB5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES
3.3V-200V
1.9mA-113.6mA
RATINGS AND CHARACTERISTIC CURVES
200
I
Z(dc)
= 1mA
1k
1SMB5913B THRU 1SMB5956B
T
J
= 25°C
i
Z(rms)
= 0.1 I
Z(dc)
V
Z
=150V
91V
62V
Z Z , DYNAMIC IMPEDANCE (OHMS)
Z Z , DYNAMIC IMPEDANCE (OHMS)
100
70
50
30
20
10
7
5
3
2
10mA
500
200
100
50
20
10
5
2
1
0.5
1
2
22V
12V
5
10
20
50
100
I
Z
, ZENER TEST CURRENT (mA)
200
6.8V
500
20mA
5
7
10
i
Z(rms)
= 0.1 I
Z(dc)
20
30
50
V
Z
, ZENER VOLTAGE (VOLTS)
70
100
Figure 7. Effect of Zener Voltage
Figure 8. Effect of Zener Current
Rating and Typical Characteristic Curves (T
A
= 25°C)
1000
MEASURED @
ZERO BIAS
MEASURED @
V
Z
/2
10
NONREPETITIVE, EXPONENTIAL
PULSE WAVEFORM, T
J
= 25°C
1
100
Ppk , PEAK POWER (kW)
C, CAPACITANCE (pF)
0.1
T
J
= 25°C
10
10
BREAKDOWN VOLTAGE (VOLTS)
100
0.01
0.01
0.1
1
T
P
, PULSE WIDTH (ms)
10
Figure 9. Capacitance Curve
Figure 10. Typical Pulse Rating Curve
120
Ippm, PEAK PULSE CURRENT (%)
10
ms
PEAK VALUE
I
ppm
100
80
60
40
20
0
Ippm, PEAK PULSE
T
A
= 25°C
PW (I
D
) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF I
pp
.
120
100
0.9 I
PEAK
80
60
40
20
0.1 I
PEAK
T = 8
ms
0
0
T
20
ms
0.02
0.04
0.06
t, TIME (ms)
0.08
0.1
8/20
ms
WAVEFORM
AS DEFINED BY ANSI C62.1
AND IEC 801−5.
HALF VALUE − I
pp
/2
10/1000
ms
WAVEFORM
AS DEFINED BY R.E.A.
t
d
0
1
2
3
t, TIME (ms)
4
5
CURRENT (%)
0.5 I
PEAK
Figure 11. Pulse Waveform
Figure 12. Pulse Waveform
E-mail: sales@taychipst.com
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of 4
Web Site: www.taychipst.com
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