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1SMF16BT3

175 W, UNIDIRECTIONAL, SILICON, TVS DIODE
175 W, 单向, 硅, 瞬态抑制二极管

器件类别:分立半导体    二极管   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
ON Semiconductor(安森美)
包装说明
LEAD FREE, PLASTIC, CASE 498-01, 2 PIN
针数
2
制造商包装代码
CASE 498-01
Reach Compliance Code
not_compliant
ECCN代码
EAR99
Is Samacsys
N
最大击穿电压
18.5 V
最小击穿电压
16.7 V
击穿电压标称值
17.6 V
最大钳位电压
26 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
175 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
16 V
表面贴装
YES
技术
ZENER
端子面层
Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
40
Base Number Matches
1
文档预览
1SMF16BT1, 1SMF16BT3,
1SMF16BT3G
Zener Transient
Voltage Suppressor
SOD−123 Flat Lead Package
The 1SMF16B is designed to protect voltage sensitive components
from high voltage, high energy transients. Excellent clamping
capability, high surge capability, low Zener impedance and fast
response time. Because of its small size, it is ideal for use in cellular
phones, portable devices, business machines, power supplies and
many other industrial/consumer applications.
Specification Features:
http://onsemi.com
Stand−off Voltage: 16 Volt
Peak Power − 175 Watts @ 1 ms
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
IEC61000−4−2 Level 4 ESD Protection
Low Profile − Maximum Height of 1.0 mm
Small Footprint
Cathode Indicated by Polarity Band
Pb−Free Package is Available
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
175 WATT PEAK POWER
1
1: CATHODE
2: ANODE
2
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
LEAD FINISH:
100% Matte Sn (Tin)
MOUNTING POSITION:
Any
QUALIFIED MAX REFLOW TEMPERATURE:
260°C
SOD−123FL
CASE 498
PLASTIC
Device Meets MSL 1 Requirements
Epoxy Meets UL 94, V−0
MARKING DIAGRAM
1
CATHODE
MLU
D
2
ANODE
MLU
D
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
1SMF16BT1
1SMF16BT3
1SMF16BT3G
Package
SOD−123FL
SOD−123FL
SOD−123FL
(Pb−Free)
Shipping
3,000/Tape & Reel
10,000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2004
1
February, 2004 − Rev. 1
Publication Order Number:
1SMF16B/D
1SMF16BT1, 1SMF16BT3, 1SMF16BT3G
MAXIMUM RATINGS
Rating
Maximum P
pk
Dissipation @ T
A
= 25°C, (PW−10/1000
ms)
(Note 1)
Maximum P
pk
Dissipation @ T
A
= 25°C, (PW−8/20
ms)
(Note 2)
Operating and Storage Temperature Range
1. Non−repetitive current pulse at T
A
= 25°C, per waveform of Figure 3.
2. Non−repetitive current pulse at T
A
= 25°C, per waveform of Figure 4.
I
Symbol
P
pk
P
pk
T
J
, T
stg
Value
175
1000
−55 to +150
Unit
W
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
R
V
F
I
T
V
I
PP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS
(T
L
= 30°C unless otherwise noted, V
F
= 1.3 Volts @ 850 mA)
V
RWM
(Note 3)
Device
1SMF16B
Marking
MLU
(V)
16
V
BR
@ I
T
(V)
(Note 4)
Min
16.7
Nom
17.6
Max
18.5
I
T
(mA)
1.0
I
R
@ V
RWM
(mA)
1.0
Max V
C
@
I
PP
= 1 Amp
(V)
20
Max V
C
@
I
PP
= 7 Amp
(V)
26
3. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V
RWM
) which should be equal to or greater
than the DC or continuous peak operating voltage level.
4. V
BR
measured at pulse test current I
T
at ambient temperature of 25°C.
Z
in
V
in
LOAD
V
L
Figure 1. Typical Protection Circuit
http://onsemi.com
2
1SMF16BT1, 1SMF16BT3, 1SMF16BT3G
10,000
t
r
PP, PEAK POWER (WATTS)
1000
100
VALUE (%)
PEAK VALUE − I
RSM
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50%
OF I
RSM
.
t
r
10
ms
100
50
t
P
I
HALF VALUE −
RSM
2
10
1.0
10
100
t
P
, PULSE WIDTH (ms)
1000
10,000
0
0
1
2
t, TIME (ms)
3
4
Figure 2. Pulse Rating Curve
Figure 3. 10 X 1000
ms
Pulse Waveform
100
90
% OF PEAK PULSE CURRENT
80
70
60
50
40
30
20
10
0
0
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
°
C
A
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
t
P
20
40
t, TIME (ms)
60
80
T
A
, AMBIENT TEMPERATURE (°C)
Figure 4. 8 X 20
ms
Pulse Waveform
Figure 5. Pulse Derating Curve
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10
ms
0.01
0.1 0.2
0.5
1
2
5
10
20
50 100
100
ms
PULSE WIDTH
10 ms
CAPACITANCE (pF)
300
250
200
150
1 ms
100
50
0
2
4
6
8
10
12
14
16
REVERSE VOLTAGE (V)
D, DUTY CYCLE (%)
Figure 6. Typical Derating Factor for Duty Cycle
Figure 7. Capacitance versus Reverse Voltage
http://onsemi.com
3
1SMF16BT1, 1SMF16BT3, 1SMF16BT3G
PACKAGE DIMENSIONS
SOD−123FL
CASE 498−01
ISSUE O
B
L
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED
ON FLAT SECTION OF THE LEAD: BETWEEN 0.10
AND 0.25 MM FROM THE LEAD TIP.
DIM
A
B
C
D
E
H
J
K
L
MILLIMETERS
MIN
MAX
1.50
1.80
2.50
2.90
0.90
1.00
0.70
1.10
0.55
0.95
0.00
0.10
0.10
0.20
3.40
3.80
0
°
8
°
INCHES
MIN
MAX
0.059
0.071
0.098
0.114
0.035
0.039
0.028
0.043
0.022
0.037
0.000
0.004
0.004
0.008
0.134
0.150
0
°
8
°
A
H
C
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
K
L
J
SOLDERING FOOTPRINT*
0.91
0.036
2.36
0.093
4.19
0.165
SOD−123
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Japan:
ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone:
81−3−5773−3850
ON Semiconductor Website:
http://onsemi.com
Order Literature:
http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
http://onsemi.com
4
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
1.22
0.048
mm
inches
1SMF16B/D
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参数对比
与1SMF16BT3相近的元器件有:1SMF16BT3G、1SMF16BT1。描述及对比如下:
型号 1SMF16BT3 1SMF16BT3G 1SMF16BT1
描述 175 W, UNIDIRECTIONAL, SILICON, TVS DIODE 175 W, UNIDIRECTIONAL, SILICON, TVS DIODE 175 W, UNIDIRECTIONAL, SILICON, TVS DIODE
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 LEAD FREE, PLASTIC, CASE 498-01, 2 PIN LEAD FREE, PLASTIC, CASE 498-01, 2 PIN LEAD FREE, PLASTIC, CASE 498-01, 2 PIN
针数 2 2 2
制造商包装代码 CASE 498-01 498-01 CASE 498-01
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99
Is Samacsys N N N
最大击穿电压 18.5 V 18.5 V 18.5 V
最小击穿电压 16.7 V 16.7 V 16.7 V
击穿电压标称值 17.6 V 17.6 V 17.6 V
最大钳位电压 26 V 26 V 26 V
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
JESD-609代码 e3 e3 e3
最大非重复峰值反向功率耗散 175 W 175 W 175 W
元件数量 1 1 1
端子数量 2 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260 260
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 16 V 16 V 16 V
表面贴装 YES YES YES
技术 ZENER ZENER ZENER
端子面层 Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL
处于峰值回流温度下的最长时间 40 40 40
Base Number Matches 1 1 1
是否Rohs认证 符合 - 符合
湿度敏感等级 1 - 1
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