ST 2SB772T
PNP SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in audio
frequency power amplifier and low speed switching
applications
E
C
B
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current - DC
Collector Current - Pulse
1)
Base Current - DC
Total Power Dissipation @ T
C
= 25
O
C
Total Power Dissipation @ T
A
= 25
O
C
Operating and Storage Junction Temperature Range
1)
TO-126 Plastic Package
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
-I
C
-I
B
P
D
P
D
T
J
, T
s
Value
40
30
5
3
7
0.6
10
1.0
- 65 to + 150
Unit
V
V
V
A
A
A
W
W
O
C
PW=10ms, Duty Cycle
≤
50%
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 2 V, -I
C
= 20 mA
at -V
CE
= 2 V, -I
C
= 1 A
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
-V
(BR)CEO
-V
(BR)CBO
-V
(BR)EBO
-I
CBO
-I
EBO
-V
CE(sat)
-V
BE(sat)
C
O
f
T
Min.
30
60
100
160
200
30
40
5
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
55
80
Max.
-
120
200
320
400
-
-
-
1
1
0.5
2
-
-
Unit
-
-
-
-
-
V
V
V
µA
µA
V
V
pF
MHz
R
Q
P
E
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
Collector Base Breakdown Voltage
at -I
C
= 1 mA
Emitter Base Breakdown Voltage
at -I
E
= 1 mA
Collector Cutoff Current
at -V
CB
= 30 V
Emitter Cutoff Current
at -V
EB
= 3 V
Collector Emitter Saturation Voltage
at -I
C
= 2 A, -I
B
= 200 mA
Base Emitter Saturation Voltage
at -I
C
= 2 A, -I
B
= 200 mA
Output Capacitance
at -V
CB
= 10 V, f = 1 MHz
Current Gain Bandwidth Product
at -I
C
= 100 mA, -V
CE
= 5 V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 25/05/2006
