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1SS427,L3M(T

0.1A, 85V, SILICON, SIGNAL DIODE

器件类别:分立半导体    二极管   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
R-PDSO-F2
Reach Compliance Code
unknow
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PDSO-F2
元件数量
1
端子数量
2
最高工作温度
150 °C
最大输出电流
0.1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大功率耗散
0.15 W
最大重复峰值反向电压
85 V
最大反向恢复时间
0.0016 µs
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
Base Number Matches
1
文档预览
1SS427
Switching Diodes Silicon Epitaxial Planar
1SS427
1. Applications
Ultra-High-Speed Switching
2. Packaging and Internal Circuit
1: Cathode
2: Anode
SOD-923
1: Cathode
2: Anode
fSC
Start of commercial production
1
2005-12
2014-07-08
Rev.3.0
1SS427
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Peak reverse voltage
Reverse voltage
Peak forward current
Average rectified current
Power dissipation
Non-repetitive peak forward surge current
Junction temperature
Storage temperature
Symbol
V
RM
V
R
I
FM
I
O
P
D
I
FSM
T
j
T
stg
(Note 1)
(Note 2)
Note
Rating
85
80
200
100
150
1
150
-55 to 150
mW
A
mA
Unit
V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 20 mm
×
20 mm, Pad dimension of 4 mm
×
4 mm.
Note 2: Measured with a 10 ms pulse.
Note:
4. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Forward voltage
Symbol
V
F(1)
V
F(2)
V
F(3)
Reverse current
Total capacitance
Reverse recovery time
I
R(1)
I
R(2)
C
t
t
rr
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
V
R
= 30 V
V
R
= 80 V
V
R
= 0 V, f = 1 MHz
I
F
= 10 mA
See Fig. 5.1.
Test Condition
Min
Typ.
0.62
0.75
0.98
0.3
1.6
Max
1.20
0.1
0.5
pF
ns
µA
Unit
V
Fig. 4.1 Reverse recovery time (t
rr
) Test circuit
2
2014-07-08
Rev.3.0
1SS427
5. Marking
Fig. 5.1 Marking
6. Land Pattern Dimensions (for reference only)
Fig. 6.1 SOD-923 (Unit: mm)
Fig. 6.2 fSC (Unit: mm)
3
2014-07-08
Rev.3.0
1SS427
7. Characteristics Curves (Note)
Fig. 7.1 I
F
- V
F
Fig. 7.2 I
R
- V
R
Fig. 7.3 C
t
- V
R
Fig. 7.4 P
D
- T
a
Note:
The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
4
2014-07-08
Rev.3.0
1SS427
Package Dimensions
Unit: mm
The shapes and dimensions of the package vary, depending on the manufacturing plant. For details, contact the
Toshiba sales representative.
Weight: 0.55 mg (typ.)
Package Name(s)
TOSHIBA: 1-1AH1A
Nickname: SOD-923
5
2014-07-08
Rev.3.0
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参数对比
与1SS427,L3M(T相近的元器件有:1SS427,L3FDKKF(A、1SS427(TL3NKOD)、1SS427,L3M。描述及对比如下:
型号 1SS427,L3M(T 1SS427,L3FDKKF(A 1SS427(TL3NKOD) 1SS427,L3M
描述 0.1A, 85V, SILICON, SIGNAL DIODE Rectifier Diode, 1 Element, 0.1A, 85V V(RRM), Silicon Rectifier Diode, 1 Element, 0.1A, 85V V(RRM), Silicon 反向恢复时间(trr):1.6ns 直流反向耐压(Vr):80V 平均整流电流(Io):100mA 正向压降(Vf):1.2V @ 100mA
包装说明 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 -
Reach Compliance Code unknow unknow unknow -
ECCN代码 EAR99 EAR99 EAR99 -
配置 SINGLE SINGLE SINGLE -
二极管元件材料 SILICON SILICON SILICON -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
JESD-30 代码 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 -
元件数量 1 1 1 -
端子数量 2 2 2 -
最高工作温度 150 °C 150 °C 150 °C -
最大输出电流 0.1 A 0.1 A 0.1 A -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR -
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE -
最大功率耗散 0.15 W 0.15 W 0.15 W -
最大重复峰值反向电压 85 V 85 V 85 V -
最大反向恢复时间 0.0016 µs 0.0016 µs 0.0016 µs -
表面贴装 YES YES YES -
端子形式 FLAT FLAT FLAT -
端子位置 DUAL DUAL DUAL -
Base Number Matches 1 1 1 -
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