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1SV242_07

VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE

器件类别:半导体    分立半导体   

厂商名称:Toshiba(东芝)

厂商官网:http://toshiba-semicon-storage.com/

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1SV242
TOSHIBA Variable Capacitance Diode
Silicon Epitaxial Planar Type
1SV242
TV VHF Wide Band Tuning
High capacitance ratio: C1 V/C28 V = 14.5 (typ.)
Low series resistance: r
s
= 0.65
(typ.)
Excellent C-V characteristics, and small tracking error.
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Reverse voltage
Peak reverse voltage
Junction temperature
Storage temperature range
Symbol
V
R
V
RM
T
j
T
stg
Rating
30
35 (R
L
=
10 kΩ)
125
−55~125
Unit
V
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
SC-59
1-3G1F
Weight: 0.013 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance ratio
Series resistance
Symbol
V
R
I
R
C1 V
C28 V
C1 V/C28 V
r
s
I
R
=
1
μA
V
R
=
28 V
V
R
=
1 V, f
=
1 MHz
V
R
=
28 V, f
=
1 MHz
V
R
=
5 V, f
=
470 MHz
(Note 1)
(Note 1)
(Note 1)
(Note 1)
Test Condition
Min
30
36
2.43
13.4
Typ.
39
2.7
14.5
0.65
Max
10
42
3.0
0.8
Unit
V
nA
pF
pF
Ω
Note 1: Characteristic between anode 1 and anode 2
Note 2: The manufactured devices are divided into groups so that the capacitance variation in each group is kept
below 2.5% in the VR range from 1 V to 28 V.
C (max)
C (min)
<
=
0.025 (VR
=
1~28 V)
C (min)
Note 3: Packing
Devices in each group occupy adjacent cavities of the embossed tape. The number of devices in each
group is a multiple of 12 (except for TPH6/TPH6R and TPH7/TPHR7).
Marking
1
2007-11-01
1SV242
(Note 3)
Note 3:
δ
C
=
C (Ta)
C (25)
×
100 (%)
C (25)
2
2007-11-01
1SV242
RESTRICTIONS ON PRODUCT USE
The information contained herein is subject to change without notice.
20070701-EN GENERAL
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
3
2007-11-01
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参数对比
与1SV242_07相近的元器件有:1SV242。描述及对比如下:
型号 1SV242_07 1SV242
描述 VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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