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20ETF04STRR

20 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

下载文档
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
包装说明
R-PSSO-G2
Reach Compliance Code
unknown
应用
FAST RECOVERY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.67 V
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值正向电流
260 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.16 µs
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
SINGLE
Base Number Matches
1
文档预览
Bulletin I2111 rev. C 03/99
QUIET
IR
Series
20ETF..S
SURFACE MOUNTABLE
FAST SOFT RECOVERY
RECTIFIER DIODE
V
F
< 1.2V @ 10A
I
FSM
= 300A
V
RRM
200 to 600V
Description/Features
The 20ETF..S soft recovery rectifier
QUIET
IR
series has been optimized for combined short
reverse recovery time and low forward voltage
drop.
The glass passivation ensures stable reliable
operation in the most severe temperature and
power cycling conditions.
Typical applications are both:
output rectification and freewheeling in
inverters, choppers and converters
and input rectifications where severe
restrictions on conducted EMI should be met.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal waveform
V
RRM
range
I
FSM
V
F
trr
T
J
@ 10 A, T
J
= 25°C
@ 1A, 100A/µs
range
Package Outline
Units
A
V
A
V
ns
20ETF..S
20
200 to 600
300
1.2
60
- 40 to 150
D
2
Pak (SMD-220)
°C
1
20ETF..S
QUIET
IR
Series
Bulletin I2111 rev. C 03/99
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
20ETF02S
20ETF04S
20ETF06S
200
400
600
V
RSM
, maximum non repetitive
peak reverse voltage
V
300
500
700
I
RRM
150°C
mA
5
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
2
20ETF..S
20
250
Units
A
A
Conditions
@ T
C
= 97° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
Surge Current
300
316
442
A
2
s
A
2
√s
I t
Max. I t for fusing
2
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
4420
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
20ETF..S
1.30
1.67
Units
V
V
mΩ
V
mA
mA
Conditions
@ 20A, T
J
= 25°C
@ 60A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
r
t
Forward slope resistance
12.5
0.9
0.1
5.0
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
Recovery Characteristics
Parameters
t
rr
I
rr
Q
rr
S
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Snap Factor
tb/ta
20ETF..S
160
10
1.25
0.6
Units
ns
A
µC
typical
Conditions
I
F
@ 20Apk
@ 100A/ µs
@ 25°C
dir
dt
Ifm
trr
ta
tb
Qrr
Irm (REC)
t
2
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20ETF..S
QUIET
IR
Series
Bulletin I2111 rev. C 03/99
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
20ETF..
- 40 to 150
- 40 to 150
0.9
40
240
2 (0.07)
D
2
Pak
Units
°C
°C
°C/W
°C/W
°C
g (oz.)
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient (PCB Mount)**
T
s
wt
Soldering Temperature
Approximate Weight
Case Style
DC operation
**When mounted on 1" square (650mm
2
) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
150
140
130
120
110
100
90
80
70
0
2
4
6
8 10 12 14 16 18 20 22
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
20ETF.. Series
R
thJC
(DC) = 0.9 K/W
150
140
130
Conduction Period
20ETF.. Series
R
(DC) = 0.9 K/W
thJC
120
110
100
90
80
0
5
10
15
20
25
30
Average Forward Current (A)
30°
60°
90°
120°
180°
DC
35
Fig. 1 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
180°
120°
90°
60°
30°
RMS Limit
Fig. 2 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
45
40
35
30
25
20 RMS Limit
15
10
5
0
0
5
10
15
20
25
30
35
Average Forward Current (A)
Conduction Period
35
30
25
20
15
Conduction Angle
DC
180°
120°
90°
60°
30°
10
5
0
0
5
10
15
20
25
Average Forward Current (A)
20ETF.. Series
T
J
= 150°C
20ETF.. Series
T
J
= 150°C
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
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3
20ETF..S
QUIET
IR
Series
Bulletin I2111 rev. C 03/99
Peak Half Sine Wave Forward Current (A)
300
550
500
450
400
350
300
250
200
150
100
50
0.001
20ETF.. Series
0.01
0.1
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Peak Half Sine Wave Forward Current (A)
250
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
RRM
Reapplied
200
150
100
20ETF.. Series
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Instant aneous Forward Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
10
T
J
= 25°C
T
J
= 150°C
20ETF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Maximum Reverse Recovery Time - Trr (µs)
Maximum Reverse Recovery Time - Trr (µs)
0.2
20ETF.. Series
T
J
= 25 °C
0.15
I
FM
= 30 A
0.5
20ETF.. Series
T
J
= 150 °C
0.4
20 A
0.3
I
FM
= 30 A
20 A
0.1
10 A
5A
0.2
0.05
0.1
10 A
5A
1A
1A
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25°C
Fig. 9 - Recovery Time Characteristics, T
J
= 150°C
4
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20ETF..S
QUIET
IR
Series
Bulletin I2111 rev. C 03/99
Maximum Reverse Recovery Charge - Qrr (µC)
Maximum Reverse Recovery Charge - Qrr (µC)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
5A
1A
10 A
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
10
9
8
7
6
5
4
3
2
1
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
5A
1A
10 A
20 A
20ETF.. Series
T
J
= 150 °C
I
FM
= 30 A
20 A
Fig. 10 - Recovery Charge Characteristics, T
J
= 25°C
Maximum Reverse Recovery Current - Irr (A)
70
60
50
40
30
20
10
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
1A
10 A
Fig. 11 - Recovery Charge Characteristics, T
J
= 150°C
Maximum Reverse Recovery Current - Irr (A)
100
20ETF.. Series
T
J
= 150 °C
80
I
FM
= 30 A
20 A
20ETF.. Series
T
J
= 25 °C
I
FM
= 30 A
20 A
60
10 A
5A
5A
40
1A
20
0
0
200
400
600
800
1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25°C
(K/W)
10
Fig. 13 - Recovery Current Characteristics, T
J
= 150°C
thJC
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single Pulse
20ETF.. Series
0. 01
0.0001
Transient T hermal Impedance Z
0.1
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
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参数对比
与20ETF04STRR相近的元器件有:20ETF02S、20ETF02STRL、20ETF02STRR、20ETF04S、DAISY-7X1-W-D、20ETF。描述及对比如下:
型号 20ETF04STRR 20ETF02S 20ETF02STRL 20ETF02STRR 20ETF04S DAISY-7X1-W-D 20ETF
描述 20 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC 20 A, 200 V, SILICON, RECTIFIER DIODE 20 A, 200 V, SILICON, RECTIFIER DIODE 20 A, 400 V, SILICON, RECTIFIER DIODE ~50° wide beam. Variant with diffused lenses 20 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 - -
厂商名称 International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) - -
包装说明 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 - -
Reach Compliance Code unknown compliant compliant compliant compliant - -
应用 FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY FAST RECOVERY - -
配置 SINGLE SINGLE SINGLE SINGLE SINGLE - -
二极管元件材料 SILICON SILICON SILICON SILICON SILICON - -
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - -
最大正向电压 (VF) 1.67 V 1.67 V 1.67 V 1.67 V 1.67 V - -
JESD-30 代码 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 - -
JESD-609代码 e0 e0 e0 e0 e0 - -
湿度敏感等级 1 1 1 1 1 - -
最大非重复峰值正向电流 260 A 260 A 260 A 260 A 260 A - -
元件数量 1 1 1 1 1 - -
相数 1 1 1 1 1 - -
端子数量 2 2 2 2 2 - -
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C - -
最大输出电流 20 A 20 A 20 A 20 A 20 A - -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - -
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - -
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - -
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - -
最大重复峰值反向电压 400 V 200 V 200 V 200 V 400 V - -
最大反向恢复时间 0.16 µs 0.16 µs 0.16 µs 0.16 µs 0.16 µs - -
表面贴装 YES YES YES YES YES - -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - -
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING - -
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE - -
Base Number Matches 1 1 1 1 1 - -
峰值回流温度(摄氏度) - 260 260 260 260 - -
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - -
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