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20ETS08FP

20 A, 800 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
包装说明
R-PSFM-T2
Reach Compliance Code
compliant
ECCN代码
EAR99
应用
GENERAL PURPOSE
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PSFM-T2
JESD-609代码
e0
最大非重复峰值正向电流
300 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-40 °C
最大输出电流
20 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
800 V
最大反向电流
100 µA
表面贴装
NO
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
Bulletin I2134 rev. C 03/99
SAFE
IR
Series
20ETS..FP
INPUT RECTIFIER DIODE
TO-220 FULLPAK
Description/Features
The 20ETS..FP rectifier
SAFE
IR
series has been
optimized for very low forward voltage drop, with
moderate leakage. The glass passivation
technology used has reliable operation up to 150°C
junction temperature.
Typical applications are in input rectification and
these products are designed to be used with
International Rectifier Switches and Output
Rectifiers which are available in identical package
outlines. Fully isolated package (V
INS
= 2500 V
RMS
).
UL E78996 approved
V
F
< 1V @ 10A
I
FSM
= 300A
V
RRM
800 to 1600V
Output Current in Typical Applications
Applications
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
common heatsink of 1°C/W
Single-phase Bridge
18
Three-phase Bridge
22
Units
A
Major Ratings and Characteristics
Characteristics
I
F(AV)
Sinusoidal
waveform
V
RRM
I
FSM
V
F
T
J
@ 10 A, T
J
= 25°C
Package Outline
20ETS..FP Units
20
800 to 1600
300
1.0
- 40 to 150
A
V
A
V
°C
TO-220 FULLPAK
www.irf.com
1
20ETS..FP
SAFE
IR
Series
Bulletin I2134 rev. C 03/99
Voltage Ratings
V
RRM
, maximum
Part Number
peak reverse voltage
V
800
1200
1600
V
RSM
, maximum non repetitive
peak reverse voltage
V
900
1300
1700
I
RRM
150°C
mA
1
20ETS08FP
20ETS12FP
20ETS16FP
Provide terminal coating for voltages above 1200V
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
I
2
t
Max. Peak One Cycle Non-Repetitive
Surge Current
Max. I
2
t for fusing
20ETS..FP Units
20
250
300
316
442
A
A
2
s
A
2
√s
A
Conditions
@ T
C
= 88° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
t = 0.1 to 10ms, no voltage reapplied
I
2
√t
Max. I
2
√t
for fusing
4420
Electrical Specifications
Parameters
V
FM
r
t
Max. Forward Voltage Drop
Forward slope resistance
20ETS..FP Units
1.1
10.4
0.85
0.1
1.0
V
mΩ
V
mA
Conditions
@ 20A, T
J
= 25°C
T
J
= 150°C
T
J
= 25 °C
T
J
= 150 °C
V
F(TO)
Threshold voltage
I
RM
Max. Reverse Leakage Current
V
R
= rated V
RRM
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
20ETS..FP Units
- 40 to 150
- 40 to 150
1.5
62
1.5
2 (0.07)
Min.
Max.
6 (5)
12 (10)
°C
°C
°C/W
°C/W
°C/W
g (oz.)
Kg-cm
(Ibf-in)
(94/V0)
Conditions
R
thJC
Max. Thermal Resistance Junction
R
thJA
to Case
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typ. Thermal Resistance Case
to Heatsink
wt
T
Approximate Weight
Mounting Torque
DC operation
Mounting surface, smooth and greased
Case Style
TO-220 FULLPAK
2
www.irf.com
20ETS..FP
SAFE
IR
Series
Bulletin I2134 rev. C 03/99
Maximum Allowable Case Tem
perature (°C)
20ETS.. Series
R
thJC
(DC) = 1.5 K/W
Maximum Allowable Case Temperature (°C)
150
140
130
120
Conduction Angle
150
140
130
120
110
100
90
80
0
5
10
15
20
25
30
35
Average Forward Current (A)
Conduction Period
20ETS.. Series
R
thJC
(DC) = 1.5 K/W
110
100
90
80
70
0
2
4
30°
60°
90°
120°
180°
30°
60°
90°
120°
180°
DC
6
8 10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
30
25
20
15
10
5
0
0
4
8
12
16
20
24
Average Forward Current (A)
180°
120°
90°
60°
30°
RMS Limit
35
30
25
20
Fig. 2 - Current Rating Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
DC
180°
120°
90°
60°
30°
RMS Limit
15
10
5
0
0
5
10
15
20
25
Average Forward Current (A)
Conduction Period
Conduction Angle
20ETS.. Series
T = 150°C
J
20ETS.. Series
T = 150°C
J
Fig. 3 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
300
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Fig. 4 - Forward Power Loss Characteristics
300
Peak Half Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial T
J
= 150°C
No Voltage Reapplied
Rated V
RRM
Reapplied
250
250
200
200
150
150
100
20ETS.. Series
50
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
100
20ETS.. Series
50
0.01
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
www.irf.com
3
20ETS..FP
SAFE
IR
Series
Bulletin I2134 rev. C 03/99
1000
Instantaneous Forward Current (A)
T = 25°C
J
100
T = 150°C
J
10
20ETS.. Series
1
0
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
10
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
1
0.1
Single Pulse
20ETS.. Series
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
4
www.irf.com
20ETS..FP
SAFE
IR
Series
Bulletin I2134 rev. C 03/99
Outline Table
10.6
10.4
HOLE ø 3.4
3.1
2.8
2.6
3.7
16.0
7.1
6.7
16.4
15.4
15.8
3.2
10°
3.3
3.1
13.7
2.54
TYP.
0.9
0.7
2.54 TYP.
0.48
0.44
2.85
2.65
1.15
1.4
1.3
1.05
TYP
R0.7 (2 PLACES)
R0.5
4.8
4.6
Dimensions in millimeters
5°± 0.5°
5°± 0.5°
Ordering Information Table
Device Code
20
1
E
2
T
3
S
4
16
5
FP
6
1
2
3
ANODE
1
2
3
4
5
6
-
-
-
-
-
-
Current Rating
Circuit Configuration:
E = Single Diode
Package:
T = TO-220AC
Type of Silicon:
S = Standard Recovery Rectifier
Voltage code: Code x 100 = V
RRM
TO-220 FULLPAK
08 = 800V
12 = 1200V
16 = 1600V
CATHODE
13.5
www.irf.com
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参数对比
与20ETS08FP相近的元器件有:20ETS、20ETS12FP、20ETS16FP。描述及对比如下:
型号 20ETS08FP 20ETS 20ETS12FP 20ETS16FP
描述 20 A, 800 V, SILICON, RECTIFIER DIODE 20 A, 800 V, SILICON, RECTIFIER DIODE 20 A, 800 V, SILICON, RECTIFIER DIODE 20 A, 1600 V, SILICON, RECTIFIER DIODE, TO-220AC
是否Rohs认证 不符合 - 不符合 不符合
厂商名称 International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon )
包装说明 R-PSFM-T2 - R-PSFM-T2 R-PSFM-T2
Reach Compliance Code compliant - compliant unknown
ECCN代码 EAR99 - EAR99 EAR99
应用 GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE
外壳连接 ISOLATED - ISOLATED ISOLATED
配置 SINGLE - SINGLE SINGLE
二极管元件材料 SILICON - SILICON SILICON
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V - 1.1 V 1.1 V
JESD-30 代码 R-PSFM-T2 - R-PSFM-T2 R-PSFM-T2
JESD-609代码 e0 - e0 e0
最大非重复峰值正向电流 300 A - 300 A 300 A
元件数量 1 - 1 1
相数 1 - 1 1
端子数量 2 - 2 2
最高工作温度 150 °C - 150 °C 150 °C
最低工作温度 -40 °C - -40 °C -40 °C
最大输出电流 20 A - 20 A 20 A
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified - Not Qualified Not Qualified
最大重复峰值反向电压 800 V - 1200 V 1600 V
最大反向电流 100 µA - 100 µA 100 µA
表面贴装 NO - NO NO
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE - SINGLE SINGLE
Base Number Matches 1 - 1 1
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