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244NQ035

DIODE 240 A, 35 V, SILICON, RECTIFIER DIODE, Rectifier Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
包装说明
R-PUFM-X1
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
FREE WHEELING DIODE
应用
GENERAL PURPOSE
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
R-PUFM-X1
最大非重复峰值正向电流
35000 A
元件数量
1
相数
1
端子数量
1
最低工作温度
-55 °C
最大输出电流
240 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
认证状态
Not Qualified
最大重复峰值反向电压
35 V
表面贴装
NO
技术
SCHOTTKY
端子形式
UNSPECIFIED
端子位置
UPPER
Base Number Matches
1
文档预览
PD-2.295 rev. A 12/97
244NQ... SERIES
SCHOTTKY RECTIFIER
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
range
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 240Apk, T
J
=100°C
range
35 to 45
35,000
0.52
- 55 to 125
V
A
V
°C
240 Amp
Description/Features
Units
A
The 244NQ high current Schottky rectifier modules have been
optimized for extremely low forward voltage drop, with higher
leakage. The proprietary barrier technology allows for reliable
operation up to 125° C junction temperature. Typical
applications are in switching power supplies, converters, free-
wheeling diodes, welding and reverse battery protection.
125° C T
J
operation
Unique high power, Half-Pak module
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Extremely low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
244NQ...
240
CASE STYLE AND DIMENSIONS
Outline HALF PAK Module
Dimensions in millimeters and inches
www.irf.com
1
244NQ... Series
PD-2.295 rev. A 12/97
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
35
40
45
V
RWM
Max. Working Peak Reverse Voltage (V)
244NQ035
244NQ040
244NQ045
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 5
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
244NQ Units
240
35,000
3800
270
40
A
mJ
A
A
Conditions
50% duty cycle @ T
C
= 75° C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 °C, I
AS
= 40 Amps, L = 0.34 mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
244NQ Units
0.55
0.73
0.52
0.72
V
V
V
V
mA
mA
pF
nH
V/ µs
@ 240A
@ 480A
@ 240A
@ 480A
T
J
= 25 °C
T
J
= 125 °C
Conditions
T
J
= 25 °C
T
J
= 100 °C
V
R
= rated V
R
I
RM
C
T
L
S
Max. Reverse Leakage Current (1)
* See Fig. 2
Max. Junction Capacitance
Typical Series Inductance
20
2400
10,300
5.0
10,000
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
From top of terminal hole to mounting plane
dv/dt Max. Voltage Rate of Change
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
244NQ Units
-55 to 125
-55 to 125
0.20
0.15
°C
°C
°C/W
°C/W
DCoperation
Conditions
R
thJC
Max. Thermal Resistance Junction
to Case
R
thCS
Typical Thermal Resistance, Case to
Heatsink
wt
T
Approximate Weight
Mounting Torque
Terminal Torque
Case Style
Min.
Max.
Min.
Max.
* See Fig. 4
Mounting surface , smooth and greased
25.6 (0.9) g (oz.)
40 (35)
58 (50)
58 (50)
86 (75)
HALF PAK Module
Kg-cm
(Ibf-in)
Non-lubricated threads
2
www.irf.com
244NQ... Series
PD-2.295 rev. A 12/97
10
00
100
00
R v r eC rr n - I ( A
e es u e t
m)
R
10
00
T =1 5 C
J
1 0C
5C
1
0
0C
1
5C
10
0
In ta t n o s F rw r C r e t - I (A
s na e u o a d u r n
)
F
10
0
.
1
0
5
R v r eV lt g - V ( )
e es o a e R V
1 1 2 2 3 3 4 4
0 5 0 5 0 5 0 5
T =1 5C
J
T =1 0C
J
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
100
00
J n tio C p c n e -C ( F
u c n a a ita c
p)
T
T= 2°
5C
J
1
0
T =2 °
5C
J
1
0
.1
F r a V lta eD p- V M V
o w rd o g ro
F ( )
.2
.3
.4
.5
.6
.
7
.
8
.9
1 1
.1
10
00
0
1
0
2
0
3
0
4
0
R v rs V lta e- V (V
ee e o g
)
R
5
0
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
T e m l Im e a c - Zt J ( C )
hr a pdne
h C ° /W
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
.1
D=0 0
.5
D=0 3
.3
D=0 5
.2
D=0 7
.1
P
D
M
t
1
t2
Nt s
oe :
1 D t f co D= t1/ t2
. uy a t r
S g P ls
in le u e
(T em l R s ta c )
h r a e is n e
2 P a T =P M Z
. ek J D x
+T
th C C
J
.1
0
D=0 8
.0
.0 1
0
.0 0 1
00
.0 0
01
.0 1
0
.0
1
.
1
1
t1, R c n u rP ls D ra n( e o d )
e ta g la u e u tio S c n s
1
0
10
0
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
www.irf.com
3
244NQ... Series
PD-2.295 rev. A 12/97
10
3
A w b C s T m e au e -(° )
llo a le a e e p r t r
C
24 Q
4N
R J ( C =02 ° /
. 0 CW
th C D )
10
2
A e g P w rL s -( a )
v ra e o e o s W tts
10
5
15
2
10
0
7
5
5
0
2
5
D
C
10
1
25
2
D=0 8
.0
.1
2 0 D=0 7
0
D=0 5
.2
15
7
D=0 3
.3
D=0 0
.5
R SL it
M im
10
0
D
C
9
0
8
0
0
5
0
A e g F r a dC r e t - IFA ) ( )
v ra e o w r u r n
( V A
10 10 20 20 30 30
0
5
0
5
0
5
0
0
5
0
A e a eF rw r C r e t - I
v r g o ad ur n
( )
A
F V
(A )
10 10 20 20 30 30
0
5
0
5
0
5
Fig. 5 - Maximum Allowable Case Temperature
Vs. Average Forward Current
100000
FSM
Fig. 6 - Forward Power Loss Characteristics
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
Non-Repetitive Surge Current - I
10000
1000
10
100
1000
(A)
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
40HFL40S02
Vd = 25 Volt
+
DUT
IRFP460
Rg = 25 ohm
CURRENT
MONITOR
Fig. 8 - Unclamped Inductive Test Circuit
4
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参数对比
与244NQ035相近的元器件有:244NQ040、244NQ045。描述及对比如下:
型号 244NQ035 244NQ040 244NQ045
描述 DIODE 240 A, 35 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 240 A, 40 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 240 A, 45 V, SILICON, RECTIFIER DIODE, Rectifier Diode
包装说明 R-PUFM-X1 R-PUFM-X1 R-PUFM-X1
Reach Compliance Code unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE FREE WHEELING DIODE FREE WHEELING DIODE
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
外壳连接 CATHODE CATHODE CATHODE
配置 SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PUFM-X1 R-PUFM-X1 R-PUFM-X1
最大非重复峰值正向电流 35000 A 35000 A 35000 A
元件数量 1 1 1
相数 1 1 1
端子数量 1 1 1
最低工作温度 -55 °C -55 °C -55 °C
最大输出电流 240 A 240 A 240 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
认证状态 Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 35 V 40 V 45 V
表面贴装 NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER UPPER
Base Number Matches 1 1 1
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