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25AA080A-I/P

1K X 8 SPI BUS SERIAL EEPROM, PDSO8
1K × 8 总线串行电可擦除只读存储器, PDSO8

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:

下载文档
器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
compli
ECCN代码
EAR99
Factory Lead Time
15 weeks
最大时钟频率 (fCLK)
10 MHz
数据保留时间-最小值
200
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
R-PDIP-T8
JESD-609代码
e3
长度
9.271 mm
内存密度
8192 bi
内存集成电路类型
EEPROM
内存宽度
8
功能数量
1
端子数量
8
字数
1024 words
字数代码
1000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1KX8
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
并行/串行
SERIAL
峰值回流温度(摄氏度)
NOT APPLICABLE
电源
2/5 V
认证状态
Not Qualified
座面最大高度
5.334 mm
串行总线类型
SPI
最大待机电流
0.000001 A
最大压摆率
0.006 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
1.8 V
标称供电电压 (Vsup)
2.5 V
表面贴装
NO
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
宽度
7.62 mm
最长写入周期时间 (tWC)
5 ms
写保护
HARDWARE/SOFTWARE
Base Number Matches
1
文档预览
25AA080A/B, 25LC080A/B
8K SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC080A
25AA080A
25LC080B
25AA080B
V
CC
Range
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
Page Size
16 Byte
16 Byte
32 Byte
32 Byte
Temp. Ranges
I, E
I
I, E
I
Packages
P, SN, ST, MS
P, SN, ST, MS
P, SN, ST, MS
P, SN, ST, MS
Features
Max. clock 10 MHz
Low-power CMOS technology
1024 x 8-bit organization
16 byte page (‘A’ version devices)
32 byte page (‘B’ version devices)
Write cycle time: 5 ms max.
Self-timed ERASE and WRITE cycles
Block write protection
- Protect none, 1/4, 1/2 or all of array
Built-in write protection
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
Sequential read
High reliability
- Endurance: 1,000,000 erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
Pb-free and RoHS compliant
Temperature ranges supported;
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Description
The Microchip Technology Inc. 25AA080A/B,
25LC080A/B (25XX080A/B
*
) are 8 Kbit Serial
Electrically Erasable PROMs. The memory is accessed
via a simple Serial Peripheral Interface (SPI)
compatible serial bus. The bus signals required are a
clock input (SCK) plus separate data in (SI) and data
out (SO) lines. Access to the device is controlled
through a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
The 25XX080A/B is available in standard packages
including 8-lead PDIP and SOIC, and advanced
packaging including 8-lead MSOP, and 8-lead TSSOP.
All packages are Pb-free and RoHS compliant.
Package Types (not to scale)
TSSOP/MSOP
(ST, MS)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
(P, SN)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
*25XX080A/B is used in this document as a generic part
number for the 25AA080A/B, 25LC080A/B.
©
2007 Microchip Technology Inc.
DS21808D-page 1
25XX080A/B
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
AMB
= -40°C to +85°C
Automotive (E): T
AMB
= -40°C to +125°C
Min.
2.0
0.7 V
CC
-0.3
-0.3
V
CC
-0.5
Max.
V
CC
+1
V
CC
+1
0.8
0.2 V
CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
V
μA
μA
pF
V
CC
= 1.8V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
μA
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
AMB
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 5.0 MHz;
SO = Open
V
CC
= 5.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, T
AMB
= -40°C
TO
+125°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, T
AMB
= -40°C
TO
+85°C
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
Sym.
V
IH1
V
IH2
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D011
I
CC
Read
Operating Current
6
2.5
mA
mA
mA
μA
μA
D012
D013
I
CC
Write
Iccs
Standby Current
3
5
1
Note:
This parameter is periodically sampled and not 100% tested.
DS21808D-page 2
©
2007 Microchip Technology Inc.
25XX080A/B
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
AMB
= -40°C to +85°C
Automotive (E): T
AMB
= -40°C to +125°C
Min.
50
100
150
100
200
250
50
10
20
30
20
40
50
50
100
150
50
100
150
50
50
0
20
40
80
Max.
10
5
3
500
500
50
100
160
40
80
160
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
CC
= 1.8V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
(Note 1)
(Note 1)
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
(Note 1)
4.5V
V
CC
5.5V
(Note 1)
2.5V
V
CC
<
4.5V
(Note 1)
1.8V
V
CC
<
2.5V
(Note 1)
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
AC CHARACTERISTICS
Param.
Sym.
No.
1
F
CLK
Characteristic
Clock Frequency
2
T
CSS
CS Setup Time
3
T
CSH
CS Hold Time
4
5
T
CSD
Tsu
CS Disable Time
Data Setup Time
6
T
HD
Data Hold Time
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
10
T
LO
Clock Low Time
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from Clock
Low
Output Hold Time
Output Disable Time
14
15
T
HO
T
DIS
16
T
HS
HOLD Setup Time
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
3:
T
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
©
2007 Microchip Technology Inc.
DS21808D-page 3
25XX080A/B
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I):
T
AMB
= -40°C to +85°C
Automotive (E): T
AMB
= -40°C to +125°C
Min.
20
40
80
30
60
160
30
60
160
1,000,000
Max.
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
V
CC
= 1.8V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
4.5V
V
CC
5.5V
(Note 1)
2.5V
V
CC
<
4.5V
(Note 1)
1.8V
V
CC
<
2.5V
(Note 1)
4.5V
V
CC
5.5V
2.5V
V
CC
<
4.5V
1.8V
V
CC
<
2.5V
(Note 3)
AC CHARACTERISTICS
Param.
Sym.
No.
17
T
HH
Characteristic
HOLD Hold Time
18
T
HZ
HOLD Low to Output
High-Z
HOLD High to Output
Valid
Internal Write Cycle Time
Endurance
19
T
HV
20
21
T
WC
E/W
(Note 2)
Cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
3:
T
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
(Note 1)
(Note 2)
0.5 V
CC
0.5 V
CC
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
> 4.0V
Timing Measurement Reference Level
DS21808D-page 4
©
2007 Microchip Technology Inc.
25XX080A/B
FIGURE 1-1:
CS
16
SCK
18
SO
n+2
n+1
n
high-impedance
19
n
5
n
n-1
n-1
17
16
17
HOLD TIMING
don’t care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode 1,1
SCK Mode 0,0
5
SI
6
LSB in
7
8
3
12
11
MSB in
SO
high-impedance
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
SCK
13
14
SO
MSB out
15
ISB out
10
3
Mode 1,1
Mode 0,0
SI
don’t care
©
2007 Microchip Technology Inc.
DS21808D-page 5
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