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25AA1024-I/SM16KVAO

EEPROM, 1MX1, Serial, CMOS, PDSO8

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
厂商名称
Microchip(微芯科技)
包装说明
SOP,
Reach Compliance Code
compliant
其他特性
ALSO OPERTAES AT 10MHZ
最大时钟频率 (fCLK)
20 MHz
JESD-30 代码
R-PDSO-G8
长度
5.26 mm
内存密度
1048576 bit
内存集成电路类型
EEPROM
内存宽度
1
功能数量
1
端子数量
8
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1MX1
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
SERIAL
筛选级别
AEC-Q100
座面最大高度
2.03 mm
串行总线类型
SPI
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
宽度
5.25 mm
最长写入周期时间 (tWC)
6 ms
Base Number Matches
1
文档预览
25AA1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number
25AA1024
V
CC
Range
1.8-5.5V
Page Size
256 Byte
Temp. Ranges
I
Packages
P, SM, MF
Features
• 20 MHz Maximum Clock Speed
• Byte and Page-level Write Operations:
- 256 byte page
- 6 ms maximum write cycle time
- No page or sector erase required
• Low-Power CMOS Technology:
- Maximum Write current: 7 mA at 5.5V
- Maximum Read current: 10 mA at 5.5V,
20 MHz
- Standby current: 1 µA at 2.5V, 85°C
(Deep Power-down)
• Electronic Signature for Device ID
• Self-Timed Erase and Write Cycles:
- Page Erase (6 ms maximum)
- Sector Erase (10 ms maximum)
- Chip Erase (10 ms maximum)
• Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1M erase/write cycles
- Data Retention: >200 years
- ESD Protection: 4000V
• Temperature Ranges Supported:
- Industrial (I):-40°C to +85°C
• RoHS Compliant
Description
The Microchip Technology Inc. 25AA1024 is a
1024 Kbit serial EEPROM memory with byte-level and
page-level serial EEPROM functions. It also features
Page, Sector and Chip erase functions typically
associated with Flash-based products. These functions
are not required for byte or page write operations. The
memory is accessed via a simple Serial Peripheral
Interface (SPI) compatible serial bus. The bus signals
required are a clock input (SCK) plus separate data in
(SI) and data out (SO) lines. Access to the device is
controlled by a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused,
transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
higher priority interrupts.
The 25AA1024 is available in standard packages
including 8-lead PDIP and SOIJ, and advanced 8-lead
DFN package. All devices are RoHS compliant.
Package Types (not to scale)
DFN
25AA1024
CS 1
SO 2
WP 3
V
SS
4
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIJ
(P, SM)
25AA1024
CS
1
SO
2
WP
3
V
SS
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
2007-2015 Microchip Technology Inc.
DS20001836J-page 1
25AA1024
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
* Limited industrial temperature range.
Min.
0.7 V
CC
-0.3
-0.3
V
CC
-0.2
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
µA
µA
pF
V
CC
≥
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400 µA
CS = V
CC
, V
IN
= V
SS
or V
CC
CS = V
CC
, V
OUT
= V
SS
or V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 20.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 85°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, 85°C
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level Input
Voltage
Low-level Input
Voltage
Low-level Output
Voltage
High-level Output
Voltage
Input Leakage
Current
Output Leakage
Current
Internal Capacitance
(all inputs and
outputs)
Test Conditions
D010
I
CCREAD
Standby Current
Deep Power-down
Current
10
5
7
5
12
1
mA
mA
mA
mA
A
µA
Operating Current
D011
D012
D013
Note:
I
CCWRITE
I
CCS
I
CCSPD
This parameter is periodically sampled and not 100% tested.
DS20001836J-page 2
2007-2015 Microchip Technology Inc.
25AA1024
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
*Limited industrial temperature range.
Min.
2
T
CSS
CS Setup Time
25
50
250
3
T
CSH
CS Hold Time
50
100
500
Max.
20
10
2
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
AC CHARACTERISTICS
Param.
No.
1
Sym.
F
CLK
Characteristic
Clock Frequency
Conditions
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
(Note
3)
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
(Note
1)
(Note
1)
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4
5
T
CSD
T
SU
CS Disable Time
Data Setup Time
50
5
10
50
20
20
25
50
250
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
6
T
HD
Data Hold Time
10
20
100
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
25
50
250
10
T
LO
Clock Low Time
25
50
250
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from Clock
Low
50
50
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from Microchip’s web site at www.microchip.com.
3:
Includes T
HI
time.
2007-2015 Microchip Technology Inc.
DS20001836J-page 3
25AA1024
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I)*:
T
A
= 0°C to +85°C
Industrial (I):
T
A
= -40°C to +85°C
*Limited industrial temperature range.
Min.
0
Max.
25
50
250
Units
ns
ns
ns
ns
(Note
1)
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
(Note
1)
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
(Note
1)
4.5
V
CC
5.5
2.5
V
CC
< 4.5
2.0
V
CC
< 2.5
1.8
V
CC
< 2.0, 0°C to +85°C
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Byte or Page mode and Page
Erase
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
AC CHARACTERISTICS
Param.
No.
14
15
Sym.
T
HO
T
DIS
Characteristic
Output Hold Time
Output Disable Time
Conditions
16
T
HS
HOLD Setup Time
10
20
100
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
T
HH
HOLD Hold Time
10
20
100
18
T
HZ
HOLD Low to Output
High Z
15
30
150
19
T
HV
HOLD High to Output
Valid
15
30
150
100
100
10
10
6
ns
ns
ns
µs
µs
ms
ms
ms
20
21
22
23
24
25
T
REL
T
PD
T
CE
T
SE
T
WC
CS High to Standby mode
CS High to Deep
Power-down
Chip Erase Cycle Time
Sector Erase Cycle Time
Internal Write Cycle Time
Endurance
1M
E/W Page mode, 25°C, 5.5V (Note
2)
cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from Microchip’s web site at www.microchip.com.
3:
Includes T
HI
time.
DS20001836J-page 4
2007-2015 Microchip Technology Inc.
25AA1024
TABLE 1-3:
AC Waveform
V
LO
= 0.2V
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
C
L
= 30 pF
Timing Measurement Reference Level
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
> 4.0V
0.5 V
CC
0.5 V
CC
(Note
1)
(Note
2)
AC TEST CONDITIONS
FIGURE 1-1:
CS
HOLD TIMING
17
17
16
SCK
16
18
SO
n+2
n+1
n
High-Impedance
19
n
5
n
n-1
n-1
Don’t Care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode
1,1
SCK Mode
0,0
5
SI
6
LSB in
7
8
3
12
11
MSB in
SO
High-Impedance
2007-2015 Microchip Technology Inc.
DS20001836J-page 5
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参数对比
与25AA1024-I/SM16KVAO相近的元器件有:25AA1024、25AA1024-I/P、25AA1024-I/MF、25AA1024T-I/SM、25AA1024T-I/P、25AA1024_10、25AA1024T-I/SM16KVAO、25AA1024-I/S16K。描述及对比如下:
型号 25AA1024-I/SM16KVAO 25AA1024 25AA1024-I/P 25AA1024-I/MF 25AA1024T-I/SM 25AA1024T-I/P 25AA1024_10 25AA1024T-I/SM16KVAO 25AA1024-I/S16K
描述 EEPROM, 1MX1, Serial, CMOS, PDSO8 128K X 8 SPI BUS SERIAL EEPROM, PDIP8 128K X 8 SPI BUS SERIAL EEPROM, PDIP8 128K X 8 SPI BUS SERIAL EEPROM, PDSO8 128K X 8 SPI BUS SERIAL EEPROM, PDSO8 128K X 8 SPI BUS SERIAL EEPROM, PDIP8 128K X 8 SPI BUS SERIAL EEPROM, PDIP8 EEPROM, 1MX1, Serial, CMOS, PDSO8 IC EEPROM 1M SPI 20MHZ WAFER
内存宽度 1 8 8 8 8 8 8 1 8
功能数量 1 1 1 1 1 1 1 1 1
组织 1MX1 128K × 8 128KX8 128KX8 128KX8 128KX8 128K × 8 1MX1 128KX8
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 GULL WING THROUGH-孔 THROUGH-HOLE NO LEAD GULL WING THROUGH-HOLE THROUGH-孔 GULL WING NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL UPPER
包装说明 SOP, - DIP, DIP8,.3 6 X 5 MM, ROHS COMPLIANT, PLASTIC, DFN-8 5.28 MM, ROHS COMPLIANT, PLASTIC, SOIJ-8 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8 - SOP, DIE,
Reach Compliance Code compliant - compli compli compli compli - compliant unknown
其他特性 ALSO OPERTAES AT 10MHZ - 200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD 200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD 200 YEARS OF DATA RETENTION; 1000000 ENDURANCE CYCLES/WORD - - ALSO OPERTAES AT 10MHZ ALSO OPERATES WITH 2.5VMIN @ 10MHZ AND 1.8VMIN @ 2MHZ
最大时钟频率 (fCLK) 20 MHz - 20 MHz 20 MHz 20 MHz 20 MHz - 20 MHz 20 MHz
JESD-30 代码 R-PDSO-G8 - R-PDIP-T8 R-PDSO-N8 R-PDSO-G8 R-PDIP-T8 - R-PDSO-G8 R-XUUC-N
长度 5.26 mm - 9.27 mm 5.99 mm 5.245 mm 9.27 mm - 5.26 mm -
内存密度 1048576 bit - 1048576 bi 1048576 bi 1048576 bi 1048576 bi - 1048576 bit 1048576 bit
内存集成电路类型 EEPROM - EEPROM EEPROM EEPROM EEPROM - EEPROM EEPROM
端子数量 8 8 8 8 8 8 8 8 -
字数 1048576 words - 131072 words 131072 words 131072 words 131072 words - 1048576 words 131072 words
字数代码 1000000 - 128000 128000 128000 128000 - 1000000 128000
工作模式 SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
最高工作温度 85 °C - 85 °C 85 °C 85 °C 85 °C - 85 °C 85 °C
最低工作温度 -40 °C - -40 °C -40 °C -40 °C -40 °C - -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY UNSPECIFIED
封装代码 SOP - DIP VSON SOP DIP - SOP DIE
封装形状 RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE - IN-LINE SMALL OUTLINE, VERY THIN PROFILE SMALL OUTLINE IN-LINE - SMALL OUTLINE UNCASED CHIP
并行/串行 SERIAL - SERIAL SERIAL SERIAL SERIAL - SERIAL SERIAL
座面最大高度 2.03 mm - 5.33 mm 1 mm 2.03 mm 4.32 mm - 2.03 mm -
串行总线类型 SPI - SPI SPI SPI SPI - SPI SPI
最大供电电压 (Vsup) 5.5 V - 5.5 V 5.5 V 5.5 V 5.5 V - 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V - 1.8 V 1.8 V 1.8 V 1.8 V - 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V - 2.5 V 2.5 V 2.5 V 2.5 V - 5 V 5 V
表面贴装 YES - NO YES YES NO - YES YES
技术 CMOS - CMOS CMOS CMOS CMOS - CMOS CMOS
端子节距 1.27 mm - 2.54 mm 1.27 mm 1.27 mm 2.54 mm - 1.27 mm -
宽度 5.25 mm - 7.62 mm 4.92 mm 5.23 mm 7.62 mm - 5.25 mm -
最长写入周期时间 (tWC) 6 ms - 6 ms 6 ms 6 ms 6 ms - 6 ms 5 ms
Base Number Matches 1 - 1 1 1 1 - 1 -
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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