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25AA640A

8K X 8 SPI BUS SERIAL EEPROM, PDSO8
8K × 8 总线串行电可擦除只读存储器, PDSO8

器件类别:存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
功能数量
1
端子数量
8
最大工作温度
85 Cel
最小工作温度
-40 Cel
最大供电/工作电压
5.5 V
最小供电/工作电压
2.5 V
额定供电电压
5 V
最大时钟频率
10 MHz
加工封装描述
3.90 MM, 铅 FREE, 塑料, SOIC-8
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
工艺
CMOS
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
GULL WING
端子间距
1.27 mm
端子涂层
MATTE 锡
端子位置
包装材料
塑料/环氧树脂
温度等级
INDUSTRIAL
内存宽度
8
组织
8K × 8
存储密度
65536 deg
操作模式
同步
位数
8192 words
位数
8K
内存IC类型
总线串行电可擦除只读存储器
串行并行
串行
写周期最大TWC
5 ms
文档预览
25AA640A/25LC640A
64K SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC640A
25AA640A
V
CC
Range
2.5-5.5V
1.8-5.5V
Page Size
32 Byte
32 Byte
Temp. Ranges
I,E
I, E
Packages
P, SN, ST, MS, MF, MNY
P, SN, ST, MS, MF, MNY
Features:
• Max. Clock 10 MHz
• Low-Power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 10 MHz
- Read Current: 5 mA at 5.5V, 10 MHz
- Standby Current: 1
A
at 5.5V
• 8192 x 8-bit Organization
• 32 Byte Page
• Self-Timed Erase and Write Cycles (5 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: 1,000,000 erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 25AA640A/25LC640A
(25XX640A
*
) are 64 kbit Serial Electrically Erasable
PROMs. The memory is accessed via a simple Serial
Peripheral Interface (SPI) compatible serial bus. The
bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled through a Chip Select (CS)
input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25XX640A is available in standard packages
including 8-lead PDIP and SOIC, and advanced
packaging including 8-lead MSOP, 8-lead TSSOP, DFN
and TDFN.
Package Types (not to scale)
TSSOP/MSOP
(ST, MS)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
(P, SN)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
X-Rotated TSSOP
(X/ST)
HOLD
V
CC
CS
SO
1
2
3
4
8
7
6
5
SCK
SI
V
SS
WP
DFN/TDFN
(MF/MNY)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
* 25XX640A is used in this document as a generic part number
for the 25AA640A, 25LC640A devices.
2003-2013 Microchip Technology Inc.
DS21830F-page 1
25AA640A/25LC640A
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
0.7 V
CC
-0.3
-0.3
V
CC
-0.5
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
A
A
pF
V
CC
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
A
CS = V
CC
, V
IN
= V
SS
or V
CC
CS = V
CC
, V
OUT
= V
SS
or V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 5.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 125°C
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 85°C
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Test Conditions
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D010
I
CC
Read
Operating Current
5
2.5
mA
mA
mA
mA
A
A
D011
D012
I
CC
Write
I
CCS
Standby Current
5
3
5
1
Note:
This parameter is periodically sampled and not 100% tested.
DS21830F-page 2
2003-2013 Microchip Technology Inc.
25AA640A/25LC640A
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
50
100
150
100
200
250
50
10
20
30
20
40
50
50
100
150
50
100
150
50
50
0
20
40
80
Max.
10
5
3
100
100
50
100
160
40
80
160
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Test Conditions
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
(Note
1)
(Note
1)
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
(Note
1)
4.5V
Vcc 
5.5V
(Note
1)
2.5V
Vcc 
4.5V
(Note
1)
1.8V
Vcc 
2.5V
(Note
1)
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
AC CHARACTERISTICS
Param.
Sym.
No.
1
F
CLK
Characteristic
Clock frequency
2
T
CSS
CS setup time
3
T
CSH
CS hold time
4
5
T
CSD
Tsu
CS disable time
Data setup time
6
T
HD
Data hold time
7
8
9
T
R
T
F
T
HI
CLK rise time
CLK fall time
Clock high time
10
T
LO
Clock low time
11
12
13
T
CLD
T
CLE
T
V
Clock delay time
Clock enable time
Output valid from clock
low
Output hold time
Output disable time
14
15
T
HO
T
DIS
16
T
HS
HOLD setup time
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site
at www.microchip.com.
3:
T
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
2003-2013 Microchip Technology Inc.
DS21830F-page 3
25AA640A/25LC640A
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
20
40
80
30
60
160
30
60
160
1M
Max.
5
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Test Conditions
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
4.5V
Vcc 
5.5V
(Note
1)
2.5V
Vcc 
4.5V
(Note
1)
1.8V
Vcc 
2.5V
(Note
1)
4.5V
Vcc 
5.5V
2.5V
Vcc 
4.5V
1.8V
Vcc 
2.5V
(Note
3)
AC CHARACTERISTICS
Param.
Sym.
No.
17
T
HH
Characteristic
HOLD hold time
18
T
HZ
HOLD low to output
High-Z
HOLD high to output valid
19
T
HV
20
21
T
WC
Internal write cycle time
Endurance
E/W 25°C, V
CC
= 5.5V
(Note
2)
Cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site
at www.microchip.com.
3:
T
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle
is complete.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
(Note
1)
(Note
2)
0.5 V
CC
0.5 V
CC
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
C
L
= 100 pF
Timing Measurement Reference Level
Input
Output
Note 1:
For V
CC
4.0V.
2:
For V
CC
> 4.0V.
DS21830F-page 4
2003-2013 Microchip Technology Inc.
25AA640A/25LC640A
FIGURE 1-1:
CS
16
SCK
18
SO
n+2
n+1
n
High-Impedance
19
n
5
n
n-1
n-1
17
16
17
HOLD TIMING
Don’t Care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode
1,1
SCK Mode
0,0
5
SI
6
LSB in
7
8
3
12
11
MSB in
SO
High-Impedance
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
SCK
13
SO
MSB out
Don’t Care
14
15
ISB out
10
3
Mode
1,1
Mode
0,0
SI
2003-2013 Microchip Technology Inc.
DS21830F-page 5
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