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25AA640_04

8K X 8 SPI BUS SERIAL EEPROM, PDIP8
8K × 8 总线串行电可擦除只读存储器, PDIP8

器件类别:存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

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器件参数
参数名称
属性值
功能数量
1
端子数量
8
最大工作温度
85 Cel
最小工作温度
-40 Cel
最大供电/工作电压
5.5 V
最小供电/工作电压
2.5 V
额定供电电压
3.3 V
最大时钟频率
2 MHz
加工封装描述
0.300 INCH, PLASTIC, DIP-8
无铅
Yes
欧盟RoHS规范
Yes
中国RoHS规范
Yes
状态
ACTIVE
工艺
CMOS
包装形状
RECTANGULAR
包装尺寸
IN-LINE
端子形式
THROUGH-HOLE
端子间距
2.54 mm
端子涂层
MATTE TIN
端子位置
DUAL
包装材料
PLASTIC/EPOXY
温度等级
INDUSTRIAL
内存宽度
8
组织
8K X 8
存储密度
65536 deg
操作模式
SYNCHRONOUS
位数
8192 words
位数
8K
内存IC类型
SPI BUS SERIAL EEPROM
串行并行
SERIAL
写周期最大TWC
5 ms
文档预览
25AA640/25LC640
64K SPI
Bus Serial EEPROM
Device Selection Table
Part
Number
25AA640
25LC640
25LC640
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max Clock
Frequency
1 MHz
2 MHz
3/2.5 MHz
Temp
Ranges
I
I
I, E
Description
The Microchip Technology Inc. 25AA640/25LC640
(25XX640
*
) is a 64 Kbit Serial Electrically Erasable
PROM [EEPROM]. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused,
transitions on its inputs will be ignored, with the
exception of Chip Select, allowing the host to service
higher priority interrupts.
Features
• Low-power CMOS technology
- Write current: 3 mA typical
- Read current: 500
µ
A typical
- Standby current: 500 nA typical
• 8192 x 8 bit organization
• 32 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP, SOIC and TSSOP packages
• Temperature ranges supported:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C
Block Diagram
Status
Register
HV Generator
EEPROM
I/O Control
Logic
Memory
Control
Logic
XDEC
Array
Page
Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Sense Amp.
R/W Control
Y Decoder
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25XX640
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
HOLD
V
CC
CS
SO
1
2
3
4
TSSOP
8
7
6
5
SCK
SI
V
SS
WP
25XX640
*25XX640 is used in this document as a generic part number for the 25AA640/25LC640 devices.
SPI is a registered trademark of Motorola Corporation.
2004 Microchip Technology Inc.
DS21223G-page 1
25AA640/25LC640
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
........................................................................................................ -0.6V to V
CC
+ 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C V
CC
= 1.8V to 5.5V
Automotive (E): T
A
= -40°C to +125°C V
CC
= 4.5V to 5.5V
Min
2.0
0.7 V
CC
-0.3
-0.3
V
CC
- 0.5
Max
V
CC
+ 1
V
CC
+ 1
0.8
0.2 V
CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
V
µA
µA
pF
Conditions
V
CC
2.7V
(Note 1)
V
CC
< 2.7V
(Note 1)
V
CC
2.7V
(Note 1)
V
CC
< 2.7V
(Note 1)
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
= < 2.5V
I
OH
= -400
µA
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note 1)
V
CC
= 5.5V; F
CLK
= 3.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
DC CHARACTERISTICS
Param.
No.
D1
D2
D3
D4
D5
D6
D7
D8
D9
Sym
V
IH
1
V
IH
2
V
IL
1
V
IL
2
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristics
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D10
I
CC
Read Operating Current
1
500
mA
µA
D11
D12
I
CC
Write
I
CCS
Standby Current
5
3
5
1
mA
mA
µA
µA
Note 1:
This parameter is periodically sampled and not 100% tested.
DS21223G-page 2
2004 Microchip Technology Inc.
25AA640/25LC640
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Characteristic
Clock Frequency
Min
100
250
500
150
250
475
500
30
50
50
50
100
100
150
230
475
150
230
475
50
50
0
100
100
200
100
100
200
100
150
200
100
150
200
1M
Max
3
2
1
2
2
150
230
475
200
250
500
5
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
E/W
Cycles
(Note 3)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 5.5V
(Note 1)
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 5.5V
(Note 1)
V
CC
= 1.8V to 5.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
(Note 1)
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
Conditions
V
CC
= 4.5V to 5.5V
(Note 2)
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 5.5V
V
CC
= 1.8V to 5.5V
AC CHARACTERISTICS
Param.
No.
1
Sym
F
CLK
2
T
CSS
CS Setup Time
3
T
CSH
CS Hold Time
4
5
T
CSD
T
SU
CS Disable Time
Data Setup Time
6
T
HD
Data Hold Time
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
10
T
LO
Clock Low Time
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from
Clock Low
Output Hold Time
Output Disable Time
14
15
T
HO
T
DIS
16
T
HS
HOLD Setup Time
17
T
HH
HOLD Hold Time
18
T
HZ
HOLD Low to Output
High-Z
HOLD High to Output
Valid
Internal Write Cycle
Time
Endurance
19
T
HV
20
21
T
WC
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
F
CLK
max. = 2.5 MHz for T
A
> 85°C.
3:
This parameter is not tested but established by characterization. For endurance estimates in a specific application,
please consult the Total Endurance™ Model which can be obtained from our web site.
2004 Microchip Technology Inc.
DS21223G-page 3
25AA640/25LC640
FIGURE 1-1:
CS
16
SCK
18
SO
n+2
n+1
n
High-impedance
5
n
n-1
19
n
n-1
17
16
17
HOLD TIMING
Don’t Care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode 1,1
SCK Mode 0,0
5
SI
MSB In
6
LSB In
7
11
8
3
12
SO
High-impedance
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
SCK
13
14
SO
MSB Out
15
LSB Out
10
3
Mode 1,1
Mode 0,0
SI
Don’t Care
DS21223G-page 4
2004 Microchip Technology Inc.
25AA640/25LC640
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
V
HI
= V
CC
– 0.2V
V
HI
= 4.0V
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
> 4.0V
(Note 1)
(Note 2)
0.5 V
CC
0.5 V
CC
SO
1.8 kΩ
100 pF
2.25 kΩ
AC TEST CONDITIONS
FIGURE 1-4:
AC TEST CIRCUIT
V
CC
Timing Measurement Reference Level
2004 Microchip Technology Inc.
DS21223G-page 5
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